Semiconductor device and method for manufacturing the same
View Patent ↗A first insulating layer including a first contact pad made of conductive polysilicon and a second insulating layer including a second contact pad are formed over a semiconductor silicon layer. After this, a via hole for a through-hole electrode is formed until the via hole penetrates through at least the semiconductor silicon layer and the first contact pad and reaches to the second contact pad.
1. A semiconductor device, comprising:
an insulating layer formed over a first principal surface of a semiconductor silicon layer;
a conductive layer comprising a first conductive layer and a second conductive layer made of mutually different materials, wherein the first conductive layer is formed over the first principal surface and the second conductive layer is formed over the first conductive layer, so as to penetrate through a predetermined portion of the insulating layer;
a via hole formed so as to penetrate through the semiconductor silicon layer and the first conductive layer to reach to the second conductive layer from a second principal surface side of the semiconductor silicon layer; and
a through-hole electrode formed inside the via hole,
wherein the first conductive layer is made of conductive polysilicon and the second conductive layer is made of a metal material.
2. The semiconductor device according to claim 1 , wherein the second conductive layer is made of tungsten, titanium, aluminum or copper or of an alloy made of a plurality of materials selected from the group consisting of tungsten, titanium, aluminum and copper, and the second conductive layer serves as an etching stopper when forming the via hole.
3. The semiconductor device according to claim 1 , further comprising a cylindrical insulator surrounding a through-hole electrode forming region and penetrating through the semiconductor silicon layer in the thickness direction of the semiconductor silicon layer.
4. The semiconductor device according to claim 3 , further comprising an insulating layer formed on the second principal surface side of the semiconductor silicon layer, so as to expose the through-hole electrode,
wherein one end of the cylindrical insulator is in contact with the insulating layer formed over the first principal surface of the semiconductor silicon layer and, the other end of the cylindrical insulator is in contact with the insulating layer formed on the second principal surface side of the semiconductor silicon layer.
5. A semiconductor device, comprising:
an insulating layer formed over a first principal surface of a semiconductor silicon layer;
a conductive layer comprising a first conductive layer and a second conductive layer made of mutually different materials, wherein the first conductive layer is formed over the first principal surface and the second conductive layer is formed over the first conductive layer, so as to penetrate through a predetermined portion of the insulating layer;
a via hole formed so as to penetrate through the semiconductor silicon layer and the first conductive layer to reach to the second conductive layer, from a second principal surface side of the semiconductor silicon layer;
a through-hole electrode formed inside the via hole; and
a conduction-preventing impurity region formed on the first principal surface side of the semiconductor silicon layer, so as to include a portion in contact with the first conductive layer.
6. The semiconductor device according to claim 5 , wherein the first conductive layer is a first contact pad and the second conductive layer is a second contact pad.
7. The semiconductor device according to claim 5 , wherein the first conductive layer is a conductive pad and the second conductive layer is an interconnect layer.
8. The semiconductor device according to claim 5 , wherein the first conductive layer is made of tungsten, titanium, aluminum or copper or of an alloy made of a plurality of materials selected from the group consisting of tungsten, titanium, aluminum and copper.
9. A semiconductor device, comprising:
a fourth insulating layer, a semiconductor silicon layer, a first insulating layer, a second insulating layer and a third insulating layer formed in order;
a first contact pad penetrating through the first insulating layer in the thickness direction of the first insulating layer and made of conductive polysilicon;
a second contact pad and an interconnect layer formed so as to respectively penetrate through positions corresponding to the first contact pad within the second and the third insulating layers in the thickness directions of the second and the third insulating layers;
a through-hole electrode formed so as to penetrate through at least the fourth insulating layer, the semiconductor silicon layer and the first contact pad to reach to the second contact pad;
a fifth insulating layer formed at least between the through-hole electrode and the semiconductor silicon layer; and
a conduction-preventing impurity region formed in the semiconductor silicon layer so as to include a portion in contact with the first contact pad.
10. A semiconductor device, comprising:
a fourth insulating layer, a semiconductor silicon layer, a first insulating layer, a second insulating layer and a third insulating layer formed in order;
a first contact pad penetrating through the first insulating layer in the thickness direction of the first insulating layer and made of conductive polysilicon;
a second contact pad and an interconnect layer formed so as to respectively penetrate through positions corresponding to the first contact pad within the second and the third insulating layers in the thickness directions of the second and the third insulating layers;
a through-hole electrode formed so as to penetrate through at least the fourth insulating layer, the semiconductor silicon layer and the first contact pad to reach to the second contact pad; and
a cylindrical insulator surrounding the through-hole electrode and penetrating through the semiconductor silicon layer in the thickness direction of the semiconductor silicon layer.