Nitride semiconductor light-emitting device
View Patent ↗A nitride semiconductor light-emitting device is provided including: a substrate made of a nitride semiconductor; a semiconductor layer made of a nitride semiconductor containing a p-type impurity, the semiconductor layer being formed as contacting an upper surface of the substrate; a first cladding layer made of a nitride semiconductor containing an impurity of a first conductivity type, the first cladding layer being formed on the semiconductor layer; an active layer formed on the first cladding layer; and a second cladding layer made of a nitride semiconductor containing an impurity of a second conductivity type, the second cladding layer being formed on the active layer.
1. A nitride semiconductor laser device comprising:
an n-electrode;
a substrate comprising gallium nitride (GaN) adapted to be electrically connected to the n-electrode;
a semiconductor layer comprising gallium nitride (GaN) containing magnesium (Mg) formed on the substrate;
a first cladding layer comprising an n-type nitride semiconductor, the first cladding layer being formed on the semiconductor layer;
an active layer formed on the first cladding layer;
a second cladding layer comprising a p-type nitride semiconductor, the second cladding layer being formed on the active layer; and
a p-electrode formed above the second cladding layer,
wherein a Mg impurity concentration in the semiconductor layer is not less than 1×10 17 cm −3 and not more than 1×10 18 cm −3 .
2. The nitride semiconductor laser device according to claim 1 , wherein the substrate is directly on the n-electrode.
3. The nitride semiconductor laser device according to claim 2 , wherein the semiconductor layer is directly on the substrate.
4. The nitride semiconductor laser device according to claim 3 , wherein the semiconductor layer contains silicon (Si).
5. The nitride semiconductor laser device according to claim 4 , wherein a Si impurity concentration in the semiconductor layer is not less than 2×10 17 cm −3 and not more than 5×10 18 cm −3 .
6. The nitride semiconductor laser device according to claim 5 , wherein the semiconductor layer contains carbon (C).
7. The nitride semiconductor laser device according to claim 6 , wherein a C impurity concentration in the semiconductor layer is not less than 2×10 17 cm −3 and not more than 5×10 18 cm −3 .
8. The nitride semiconductor laser device according to claim 1 , wherein the semiconductor layer has a thickness of not less than 5 nm and not more than 200 nm.
9. The nitride semiconductor laser device according to claim 1 , wherein the semiconductor layer contains carbon (C).
10. The nitride semiconductor laser device according to claim 9 , wherein a C impurity concentration in the semiconductor layer is not less than 2×10 17 cm −3 and not more than 5×10 18 cm −3 .