Nitride semiconductor light emitting diode
View Patent ↗A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.
1. A nitride semiconductor light emitting diode (LED) comprising:
an n-type nitride semiconductor layer;
a first electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III;
an active layer formed on the electron emitting layer;
a p-type nitride semiconductor layer formed on the active layer; and
a second electron emitting layer formed between the active layer and the p-type nitride semiconductor layer, the second electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III.
2. A nitride semiconductor light emitting diode (LED) comprising:
a substrate;
an n-type nitride semiconductor layer formed on the substrate;
a first electron emitting layer formed on a portion of the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III;
an active layer formed on the electron emitting layer;
a p-type nitride semiconductor layer formed on the active layer;
a p-electrode formed on the p-type nitride semiconductor layer;
an n-electrode formed on the n-type nitride semiconductor layer where the electron emitting layer is not formed; and
a second electron emitting layer formed between the active layer and the p-type nitride semiconductor layer, the second electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III.
3. A nitride semiconductor light emitting diode (LED) comprising:
a p-electrode;
a p-type nitride semiconductor layer formed on the p-electrode;
an active layer formed on the p-type nitride semiconductor layer;
a first electron emitting layer formed on the active layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III;
an n-type nitride semiconductor layer formed on the electron emitting layer;
a substrate formed on the n-type nitride semiconductor layer;
an n-electrode formed on the substrate; and
a second electron emitting layer formed between the p-type nitride semiconductor layer and the active layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III.