Thin-film transistor, electro-optical device, and electronic apparatus

1. A thin-film transistor comprising:

a source electrode;

a drain electrode arranged apart from the source electrode;

an organic semiconductor layer arranged between the source electrode and the drain electrode so as to establish connection of the source electrode and the drain electrode;

a first insulating layer arranged on one surface side of the organic semiconductor layer;

a gate electrode arranged on a side of the first insulating layer opposite that on which the organic semiconductor layer lies; and

a second insulating layer arranged on a side of the organic semiconductor layer opposite that on which the first insulating layer lies,

wherein the organic semiconductor layer contains an organic semiconductor material having p-type semiconducting properties, and the second insulating layer contains one or more compounds of the following formula (1), so that electrons are fed from the second insulating layer into the organic semiconductor layer:

wherein R 1 and R 2 independently represent a substituted or unsubstituted alkylene group; X 1 , X 2 , X 3 and X 4 each represent a hydrogen atom or an electron-donating group; and n represents 100 to 100,000, wherein any two of X 1 , X 2 , X 3 and X 4 represent electron-donating groups.

2. The thin-film transistor according to claim 1 , wherein the alkylene group has 1 to 20 carbon atoms.

3. The thin-film transistor according to claim 1 , wherein at least one of the electron-donating groups has an amino group.

4. The thin-film transistor according to claim 1 , wherein the organic semiconductor material having p-type semiconducting properties is a thiophene-based material.

5. The thin-film transistor according to claim 1 , wherein the one or more compounds of the formula (1) each have a weight-average molecular weight of 10,000 to 1,000,000.

6. The thin-film transistor according to claim 1 , wherein the second insulating layer contains at least one of poly(amino-p-xylylene) of the formula (2) and poly(methylamino-p-xylylene) of the formula (3) as the one or more compounds of the formula (1):

wherein each n represents 100 to 100,000.

7. The thin-film transistor according to claim 1 , wherein the second insulating layer, the source electrode, the drain electrode, the organic semiconductor layer, the first insulating layer, and the gate electrode are arranged on a substrate, and

wherein the gate electrode is more distant from the substrate than the source electrode and the drain electrode.

8. The thin-film transistor according to claim 7 , wherein the second insulating layer, the source electrode and the drain electrode, the organic semiconductor layer, the first insulating layer, and the gate electrode are stacked in that order on the substrate.

9. The thin-film transistor according to claim 7 , wherein the second insulating layer, the organic semiconductor layer, the source electrode and the drain electrode, the first insulating layer, and the gate electrode are stacked in that order on the substrate.

10. The thin-film transistor according to claim 1 , wherein the second insulating layer, the source electrode and the drain electrode, the organic semiconductor layer, the first insulating layer, and the gate electrode are arranged on a substrate, and

wherein the gate electrode is closer to the substrate than the source electrode and the drain electrode.

11. The thin-film transistor according to claim 10 , wherein the gate electrode, the first insulating layer, the source electrode and the drain electrode, the organic semiconductor layer, and the second insulating layer are stacked in that order on the substrate.

12. The thin-film transistor according to claim 10 , wherein the gate electrode, the first insulating layer, the organic semiconductor layer, the source electrode and the drain electrode, and the second insulating layer are stacked in that order on the substrate.

13. An electro-optical device comprising:

a thin film transistor according to claim 1 .

14. An electronic apparatus comprising:

an electro-optical device according to claim 13 .

15. A thin-film transistor comprising:

a source electrode;

a drain electrode arranged apart from the source electrode;

an organic semiconductor layer arranged between the source electrode and the drain electrode so as to establish connection of the source electrode and the drain electrode;

a first insulating layer arranged on one surface side of the organic semiconductor layer;

a gate electrode arranged on a side of the first insulating layer opposite that on which the organic semiconductor layer lies; and

a second insulating layer arranged on a side of the organic semiconductor layer opposite that on which the first insulating layer lies,

wherein the organic semiconductor layer contains an organic semiconductor material having p-type semiconducting properties, and the second insulating layer contains one or more compounds of the following formula (1), so that electrons are fed from the second insulating layer into the organic semiconductor layer:

wherein R 1 and R 2 independently represent a substituted or unsubstituted alkylene group; X 1 , X 2 , X 3 and X 4 each represent a hydrogen atom or an electron-donating group; and n represents 100 to 100,000, wherein at least one of X 1 , X 2 , X 3 and X 4 represents an electron-donating group,

wherein the second insulating layer contains two or more of the one or more compounds of the formula (1), the compounds having different combinations of X 1 , X 2 , X 3 , and X 4 .