Methods for forming crystalline thin-film photovoltaic structures

1. A method for forming a semiconductor device, the method comprising:

providing a textured polycrystalline metal template;

forming a buffer layer over the textured template;

forming a substrate layer over the buffer layer;

removing the textured template, thereby exposing a surface of the buffer layer; and

forming a semiconductor layer over the exposed surface of the buffer layer.

2. The method of claim 1 , wherein, during formation of the buffer layer, the buffer layer inherits the texture of the textured template.

3. The method of claim 2 , wherein the texture appears on the exposed surface of the buffer layer.

4. The method of claim 1 , further comprising forming a sacrificial layer over the textured template prior to forming the buffer layer.

5. The method of claim 4 , wherein, during formation of the sacrificial layer, the sacrificial layer inherits the texture of the textured template.

6. The method of claim 4 , further comprising removing the sacrificial layer during removal of the textured template.

7. The method of claim 4 , wherein the sacrificial layer comprises Pd.

8. The method of claim 1 , further comprising forming an insulator layer over the buffer layer prior to forming the substrate layer.

9. The method of claim 8 , wherein the insulator layer comprises an oxide.

10. The method of claim 1 , further comprising forming a diffusion barrier over the buffer layer prior to forming the substrate layer.

11. The method of claim 10 , wherein the diffusion barrier is substantially free of the texture of the textured template.

12. The method of claim 10 , wherein the diffusion barrier comprises at least one of W, Re, an oxide, or a nitride.

13. The method of claim 12 , wherein the diffusion barrier comprises W.

14. The method of claim 1 , wherein the substrate layer comprises at least one of W, Mo, a metal alloy, a ceramic, or a glass.

15. The method of claim 1 , wherein the substrate layer comprises a material substantially impervious to formation of at least one of As-containing phases or Si-containing phases at a temperature greater than approximately 350° C.

16. The method of claim 1 , wherein the substrate layer is substantially free of the texture of the textured template.

17. The method of claim 1 , wherein the semiconductor layer comprises at least one of Si, Ge, or InGaAs.

18. The method of claim 1 , wherein a coefficient of thermal expansion of the substrate layer substantially matches a coefficient of thermal expansion of the semiconductor layer.

19. The method of claim 1 , wherein the buffer layer comprises at least one of Cr, an oxide, or a nitride.

20. The method of claim 1 , wherein the textured template comprises at least one of Cu, Ni, or a Cu—Ni alloy.

21. The method of claim 1 , wherein the semiconductor layer comprises at least one of a p-n junction or a p-i-n junction.

22. The method of claim 1 , further comprising forming a semiconductor device on the semiconductor layer.

23. The method of claim 22 , wherein the semiconductor device comprises at least one of GaAs, AlGaAs, InGaP, InGaAsN, InGaAsP, InP, AlInAs, or InGaAs.

24. The method of claim 22 , wherein the semiconductor device comprises at least one of a photovoltaic cell, a light-emitting diode, or a laser.

25. The method of claim 22 , wherein the substrate layer functions as a back contact for the semiconductor device.

26. The method of claim 1 , wherein the buffer layer and the substrate layer are each formed by deposition.

27. The method of claim 26 , wherein the deposition is performed without ion-beam assistance.

28. The method of claim 1 , wherein the buffer layer is a polycrystalline metal.

29. The method of claim 28 , wherein the semiconductor layer is formed directly on the exposed surface of the buffer layer.

30. The method of claim 1 , wherein the textured template is deformation textured.