Photosensor and display device
View Patent ↗A photosensor including a semiconductor thin film having a light receiving portion includes the following elements. A substrate has a recess with an inclined side wall having a forward tapered shape. A reflective material layer is disposed along the recess of the substrate. An insulating layer covers the substrate having thereon the reflective material layer. The semiconductor thin film is disposed on the insulating layer so as to cross the recess. The light receiving portion of the semiconductor thin film is disposed above the recess.
1. A photosensor including a semiconductor thin film having a light receiving portion, the photosensor comprising:
a substrate having a recess with an inclined side wall having a forward tapered shape;
a reflective material layer disposed along the recess of the substrate;
an insulating layer covering the substrate having thereon the reflective material layer; and
the semiconductor thin film disposed on the insulating layer so as to cross the recess, wherein
the light receiving portion of the semiconductor thin film is disposed above the recess.
2. The photosensor according to claim 1 , wherein the semiconductor thin film includes an i-doped region, used as the light receiving portion, a p-doped region, and an n-doped region such that the p-doped and n-doped regions sandwich the i-doped region.
3. The photosensor according to claim 2 , wherein the reflective material layer is connected to one of the p-doped region and the n-doped region.
4. The photosensor according to claim 3 , further comprising:
a light-transmissive insulating interlayer covering the semiconductor thin film; and
an interconnect disposed on the insulating interlayer, the interconnect being connected to the p-doped region or the n-doped region via a contact hole arranged in the insulating interlayer, wherein
the reflective material layer is connected to one of the p-doped region and the n-doped region through the interconnect.
5. The photosensor according to claim 1 , wherein
the semiconductor thin film has a first conductivity type doped region, used as the light receiving portion, and two second conductivity type doped regions such that the second conductivity type doped regions sandwich the light receiving portion, and
the reflective material layer is used as a gate electrode.
6. The photosensor according to claim 1 , wherein the i-doped region senses visible light and invisible light.
7. A display device including a substrate, a pixel portion, and a photosensor such that the pixel portion and the photosensor are disposed on one surface of the substrate, the photosensor comprising:
a reflective material layer disposed along a recess arranged in the substrate, the recess having an inclined side wall with a forward tapered shape;
an insulating layer covering the substrate having thereon the reflective material layer; and
a semiconductor thin film disposed on the insulating layer so as to cross the recess, wherein
a light receiving portion of the semiconductor thin film is disposed above the recess.
8. The display device according to claim 7 , wherein
the pixel portion has a thin film transistor for pixel driving,
the semiconductor thin film constituting the photosensor includes the same layer as a semiconductor thin film constituting an active layer of the thin film transistor, and
the reflective material layer includes the same layer as a gate electrode of the thin film transistor.
9. The display device according to claim 7 , further comprising:
an opposite substrate arranged so as to face the photosensor disposed on the surface of the substrate; and
a liquid crystal layer arranged between the substrate and the opposite substrate.
10. The display device according to claim 9 , further comprising:
a backlight disposed on the other surface of the substrate.
11. The display device according to claim 10 , wherein the backlight emits visible light and invisible light.