Method of aligning two or more printhead modules mounted to a support member in a printer

1. A method of aligning two or more printhead modules mounted to a support member in a printer, the printhead modules being MEMS manufactured integrated circuits having at least one fiducial on each, the method comprising the steps of:

positioning the printhead modules on the support member such that they align when the support member is at operating temperature but not necessarily at other temperatures; and

using the fiducials to misalign the printhead modules by a distance calculated from:

i) the difference between the coefficient of thermal expansion of the support member and the printhead integrated circuits;

ii) the spacing of the printhead integrated circuits along the support member;

iii) the difference between a production temperature of the modules and an operating temperature of the printer; and

iv) the length of each individual printhead module and a difference between an ambient temperature and an operating temperature.

2. The method of claim 1 , wherein the fiducials are reference markings placed on the integrated circuits so that they may be accurately positioned on the support member using a microscope.

3. The method of claim 1 , wherein acceptable module alignment is calculated within a temperature range of 0° C. to 40° C.

4. The method of claim 1 , wherein the temperature range in which the alignment of the modules must be within the acceptable limits is 50° C. to 90° C. to compensate for operating temperature of the printhead rising a fixed amount above the ambient temperature in which the printer is operating.

5. The method of claim 1 , wherein the support beam has a silicon core mounted within a metal channel to minimize the difference in coefficient of thermal expansion between the printhead modules and the support beam.

6. The method of claim 5 , wherein an elastomeric layer is positioned between the core and the channel to allow limited movement between the metal channel and the silicon core to isolate the silicon core from the high coefficient of thermal expansion in the metal channel.