Light unit, liquid crystal display having the same, and method of manufacturing the same

1. A light unit comprising:

a light emitting chip emitting light;

a light conversion layer disposed on the light emitting chip, and the light conversion layer including a first resin layer and semiconductor particles distributed on the first resin layer and converting a wavelength of light in accordance with their size, a diameter of the semiconductor particles being in the range of 1˜10 nm; and

a buffer layer interposed between the light emitting chip and the light conversion layer, the buffer layer including a second resin layer,

wherein the first resin layer has a lower specific gravity than the second resin layer.

2. The light unit of claim 1 , wherein the semiconductor particles include an inner core and an outer shell surrounding the inner core, and the inner core comprises CdSe or InGaP, and the outer shell comprises ZnS or CuZnS.

3. The light unit of claim 1 , wherein a thickness of the buffer layer is about 60% to about 70% of a whole thickness of the optical conversion layer and the buffer layer.

4. The light unit of claim 1 , wherein the light is blue light or ultraviolet rays.

5. The light unit of claim 1 , wherein the light conversion layer includes a first light conversion layer and a second light conversion layer, the first light conversion layer including first semiconductor particles and converting the light into red light, and the second light conversion layer including second semiconductor particles having a diameter smaller than that of the first semiconductor particles and converting the light into green light.

6. The light unit of claim 1 , wherein the first resin is an epoxy-based material and the second resin is a silicon-based material.

7. A liquid crystal display comprising:

a light unit including a light emitting chip emitting light, a light conversion layer disposed on the light emitting chip and including a first resin layer and semiconductor particles distributed on the first resin layer and converting a wavelength of light in accordance with their size, a diameter of the semiconductor particles being in the range of 1˜10 nm, and a buffer layer interposed between the light emitting chip and the light conversion layer, the buffer layer including a second resin layer; and

a liquid crystal panel receiving the light and displaying an image,

wherein the first resin layer has a lower specific gravity than the second resin layer.

8. The liquid crystal display of claim 7 , wherein the semiconductor particles include an inner core and an outer shell surrounding the inner core, and the inner core comprises CdSe or InGaP, and the outer shell comprises ZnS or CuZnS.

9. The liquid crystal display of claim 7 , wherein the light conversion layer includes a first light conversion layer and a second light conversion layer, wherein the first light conversion layer includes first semiconductor particles and converts the light into red light, and the second light conversion layer includes second semiconductor particles having a diameter smaller than that of the first semiconductor particles and converts the light into green light.

10. The liquid crystal display of claim 7 , wherein the light unit is arranged directly behind the liquid crystal panel.

11. The liquid crystal display of claim 7 , further comprising a light guide plate guiding the light to a lower part of the liquid crystal panel,

wherein the light unit is formed at a side part of the light guide plate.

12. A method of manufacturing a light unit, comprising:

injecting a first liquid resin on a light emitting chip;

injecting a second liquid resin, including semiconductor particles and having lower specific gravity than the first resin, on the first resin; and

curing the first resin and the second resin to form a buffer layer comprising the first resin and a light conversion layer comprising the second resin,

wherein injecting the second liquid resin is performed before the first liquid resin is solidified.

13. The method of claim 12 , wherein curing is performed at a temperature about 150° C. to about 160° C.

14. The method of claim 12 , wherein the first resin comprises an epoxy-based material, and the second resin comprises a silicon-based material.

15. The method of claim 12 , wherein a diameter of the semiconductor particles is about 1 nm to about 10 nm.

16. The method of claim 15 , wherein the semiconductor particles include an inner core and an outer shell surrounding the inner core, and the inner core comprises CdSe or InGaP, and the outer shell comprises ZnS or CuZnS.

17. The method of claim 15 , wherein the light conversion layer includes a first light conversion layer and a second light conversion layer, wherein the first light conversion layer includes first semiconductor particles and converts the light into red light, and the second light conversion layer includes second semiconductor particles having a diameter smaller than that of the first semiconductor particles and converts the light into green light.

18. The method of claim 12 , further comprising:

forming a liquid crystal panel receiving light and displaying an image; and

forming a light guide plate guiding the light to a lower part of the liquid crystal panel, wherein the light unit is formed at a side part of the light guide plate.

19. The method of claim 12 , wherein the first and second liquid resins are cured simultaneously.