Gallium electroplating methods and electrolytes employing mixed solvents
View Patent ↗An electrochemical deposition method and electrolyte to plate uniform, defect free and smooth gallium films are provided. In a preferred embodiment, the electrolyte may include a solvent that comprises water and at least one monohydroxyl alcohol, a gallium salt, and an acid to control the solution pH and conductivity. The method electrodeposits a gallium film possessing sub-micron thickness on a conductive surface. Such gallium layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells.
1. An electrodeposition solution for electrodepositing a gallium (Ga) thin film on a conductive surface, comprising:
water;
at least one organic solvent with a room temperature viscosity of less than or equal to 10 centipoise and a freezing point of lower than −20° C.; and
a Ga source material that provides Ga ions, and wherein the electrodeposition solution has a pH between 1 and 3.
2. The electrodeposition solution of claim 1 , wherein a volume ratio of the at least one organic solvent to water is in the range of 0.1-10.
3. The electrodeposition solution of claim 2 wherein the at least one organic solvent comprises a monohydroxyl alcohol.
4. The electrodeposition solution of claim 3 , wherein the monohydroxyl alcohol comprises at least one of methanol, a primary alcohol, a secondary alcohol and a tertiary alcohol, wherein the primary alcohol is selected from the group consisting of ethanol, 1-propanol, isobutanol, 1-pentanol, 1-hexanol and 1-heptanol, and wherein the secondary alcohol is selected from the group consisting of isopropyl alcohol, 2-butanol, 2-methyl-2-butanol and 2-hexanol, and wherein the tertiary alcohol is selected from the group consisting of tert-butanol and tert-amyl alcohol.
5. The electrodeposition solution of claim 4 , further comprising a pH adjustment agent, and wherein the pH adjustment agent comprises at least one of an acid, an alkali metal salt of the acid, and an alkali earth metal salt of the acid, wherein the acid is selected from the group consisting of sulfamic acid, citric acid, acetic acid, tartaric acid, maleic acid, boric acid, malonic acid, succinic acid, phosphoric acid, oxalic acid, formic acid, arsenic acid, benzoic acid, sulfuric acid, nitric acid, hydrochloric acid, and amino acids, wherein the alkali metal salt is selected from the group consisting of a lithium salt, a sodium salt, a potassium salt, a rubidium salt, and a cesium salt, and wherein the alkali earth metal salt is selected from the group consisting of a beryllium salt, a magnesium salt, a calcium salt, a strontium salt, and a barium salt.
6. The electrodeposition solution of claim 3 , wherein the Ga source material comprises at least one of a dissolved Ga metal and a dissolved Ga salt, wherein the dissolved Ga salt is selected from the group consisting of Ga-chloride, Ga-sulfate, Ga-sulfamate, Ga-acetate, Ga-carbonate, Ga-nitrate, Ga-perchlorate, Ga-phosphate, Ga-oxide, and Ga-hydroxide.
7. The electrodeposition solution of claim 1 , wherein the Ga source material comprises at least one of a dissolved Ga metal and a dissolved Ga salt, wherein the dissolved Ga salt is selected from the group consisting of Ga-chloride, Ga-sulfate, Ga-sulfamate, Ga-acetate, Ga-carbonate, Ga-nitrate, Ga-perchlorate, Ga-phosphate, Ga-oxide, and Ga-hydroxide.
8. The electrodeposition solution of claim 1 further comprising an organic additive, where the organic additive is selected from the group consisting of surfactants, suppressors, levelers, and accelerators.
9. A method of electrodepositing gallium (Ga) for manufacturing a solar cell absorber, comprising the steps of:
providing an electrodeposition solution that comprises water, an organic solvent with a room temperature viscosity of less than or equal to 10 centipoise and a freezing point of lower than −20° C., and a Ga source material that provides Ga ions, wherein the electrodeposition solution has a pH between 1 and 3;
contacting the electrodeposition solution with an electrode and a conductive layer;
establishing a potential difference between the electrode and the conductive layer; and
electrodepositing a Ga layer over the conductive layer to assist in obtaining the solar cell absorber.
10. The method of claim 9 , wherein a volume ratio of the organic solvent to water is in the range of 0.05-99.
11. The method of claim 10 , wherein the organic solvent is a monohydroxyl alcohol.
12. The method of claim 11 , wherein the monohydroxyl alcohol is selected from the group consisting of methanol, a primary alcohol, a secondary alcohol and a tertiary alcohol, wherein the primary alcohol is selected from the group consisting of ethanol, 1-propanol, isobutanol, 1-pentanol, 1-hexanol and 1-heptanol, and wherein the secondary alcohol is selected from the group consisting of isopropyl alcohol, 2-butanol, 2-methyl-2-butanol and 2-hexanol, and wherein the tertiary alcohol is selected from the group consisting of tert-butanol and tert-amyl alcohol.
13. The method of claim 9 , wherein the Ga source material comprises at least one of a dissolved Ga metal and a dissolved Ga salt, wherein the dissolved Ga salt is selected from the group consisting of Ga-chloride, Ga-sulfate, Ga-sulfamate, Ga-acetate, Ga-carbonate, Ga-nitrate, Ga-perchlorate, Ga-phosphate, Ga-oxide, and Ga-hydroxide.
14. The method of claim 9 , further comprising a pH adjustment agent, and wherein the pH adjustment agent comprises at least one of an acid and an alkali metal salt of the acid wherein the acid is selected from the group consisting of sulfamic acid, citric acid, acetic acid, tartaric acid, maleic acid, boric acid, malonic acid, succinic acid, phosphoric acid, oxalic acid, formic acid, arsenic acid, benzoic acid, sulfuric acid, nitric acid, hydrochloric acid, and amino acids and wherein the alkali metal salt is selected from the group consisting of lithium salt, sodium salt, potassium salt, rubidium salt, and a cesium salt.
15. The method of claim 9 , wherein the potential difference between the electrode and the conductive layer is established in a pulsing manner.
16. The method of claim 9 , wherein the conductive layer is a copper layer formed over a base layer.
17. The method of claim 16 , further comprising depositing an indium layer over the gallium layer.
18. The method of claim 17 , further comprising reacting the copper, gallium, and indium layers in presence of at least one of selenium and sulfur to form a CIGS(S) solar cell absorber.