Organic light emitting device and manufacturing method thereof

1. An organic light emitting device, comprising:

a substrate;

a first pixel electrode disposed on the substrate;

a second pixel electrode disposed on the first pixel electrode and having a groove;

a partition disposed on the second pixel electrode and having an opening exposing the groove;

an organic light emitting member, at least a portion of the organic light emitting member being disposed in the groove; and

a common electrode disposed on the partition and the organic light emitting member,

wherein the partition overlaps the groove to form a gap, and at least a portion of the organic light emitting member is disposed in the gap.

2. The organic light emitting device of claim 1 , wherein:

the first pixel electrode and the second pixel electrode are made of different materials.

3. The organic light emitting device of claim 2 , wherein:

the first pixel electrode is made of indium tin oxide.

4. The organic light emitting device of claim 3 , wherein:

the second pixel electrode is made of indium zinc oxide.

5. The organic light emitting device of claim 2 , wherein:

the groove passes through the second pixel electrode and exposes the first pixel electrode.

6. The organic light emitting device of claim 5 , wherein:

the depth of the groove is in the range of 5 nm to 200 nm.

7. The organic light emitting device of claim 2 , wherein:

the first pixel electrode has a multi-layered structure.

8. The organic light emitting device of claim 7 , wherein:

the first pixel electrode comprises:

a first layer made of indium tin oxide (ITO);

a second layer disposed on the first layer and made of a metal; and

a third layer disposed on the second layer and made of ITO.

9. The organic light emitting device of claim 8 , wherein:

the second layer comprises aluminum.

10. The organic light emitting device of claim 8 , further comprising:

an auxiliary electrode disposed on the partition and made of a metal, the auxiliary electrode contacting the common electrode.

11. The organic light emitting device of claim 10 , wherein:

the auxiliary electrode comprises copper, silver, aluminum, or a combination thereof.

12. The organic light emitting device of claim 2 , wherein:

the organic light emitting member comprises a hole transport layer and an emission layer, and the hole transport layer comprises a portion disposed in the gap.

13. The organic light emitting device of claim 12 , wherein:

the emission layer comprises a portion disposed in the gap.

14. The organic light emitting device of claim 12 , wherein:

the thickness of the hole transport layer is in the range of 500 Å to 2000 Å.

15. The organic light emitting device of claim 12 , further comprising:

an electron transport layer disposed on the emission layer and on the opening of the partition.

16. A method for manufacturing an organic light emitting device, comprising:

forming a first pixel electrode and a second pixel electrode on a substrate, the second pixel electrode comprising a different material from the material of the first pixel electrode and the second pixel electrode being disposed on the first pixel electrode;

forming a partition having an opening on the second pixel electrode;

etching the second pixel electrode to form a groove forming a gap under the partition;

forming an organic light emitting member in the groove to fill at least a portion of the gap; and

forming a common electrode on the organic light emitting member and the partition.

17. The method of claim 16 , wherein forming the first pixel electrode and the second pixel electrode comprises:

depositing an amorphous indium tin oxide (ITO) layer on the substrate;

depositing an indium zinc oxide (IZO) layer on the amorphous ITO layer;

etching the amorphous ITO layer and the IZO layer; and

heat treating the etched amorphous ITO layer to covert it into a poly ITO layer.

18. The method of claim 17 , further comprising:

depositing a metal layer on the partition; and

etching the metal layer to form an auxiliary electrode.

19. The method of claim 18 , wherein etching the second pixel electrode and etching of the metal layer are performed simultaneously.

20. The method of claim 16 , wherein

forming the first pixel electrode comprises:

depositing amorphous indium tin oxide (ITO) on the substrate;

depositing a metal layer on the amorphous ITO; and

depositing amorphous ITO on the metal layer.

21. The method of claim 16 , wherein forming the partition comprises:

depositing a photosensitive organic material layer or a photosensitive inorganic material layer on the second pixel electrode; and

exposing and etching the material layer to form an opening exposing the second pixel electrode.

22. The method of claim 21 , wherein:

the organic light emitting member is formed by an inkjet method.

23. The method of claim 22 , wherein:

the organic light emitting member is filled in the gap by a capillary phenomenon.

24. The method of claim 16 , wherein forming the organic light emitting member comprises:

depositing a hole transport layer on the second pixel electrode; and

depositing an emission layer on the hole transport layer,

wherein the hole transport layer fills the gap.