Tin oxide-based sputtering target, transparent and conductive films, method for producing such films and composition for use therein
View Patent ↗The present invention is directed to a composition consisting essentially of: a) from about 60 to about 99 mole % of SnO 2 , and b) from about 1 to about 40 mole % of one or more materials selected from the group consisting of i) Nb 2 O 5 , ii) NbO, iii) NbO 2 , iv) WO 2 , v) a material selected consisting of a) a mixture of MoO 2 and Mo and b) Mo, vi) W, vii) Ta 2 O 5 , and viii) mixtures thereof, wherein the mole % s are based on the total product and wherein the sum of components a) and b) is 100. The invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.
1. A composition consisting essentially of:
a) from about 60 to about 99 mole % of SnO 2 , and
b) from about 1 to about 40 mole % of Mo and one or more materials selected from the group consisting of
i) Nb 2 O 5 ,
ii) NbO,
iii) WO 2 , and
iv) Ta 2 O 5
wherein the mole % s are based on the total product and wherein the sum of components a) and b) is 100.
2. The composition of claim 1 , consisting essentially of a) from about 90 to about 99 mole % of Sn0 2 and b) from about 1 to about 10 mole % of the component b).
3. The composition as claimed in claim 2 , wherein component b) is Mo and Nb 2 O 5 .
4. The composition as claimed in claim 2 , wherein component b) is Mo and NbO.
5. The composition as claimed in claim 2 , wherein component b) is Mo and WO 2 .
6. The composition as claimed in claim 2 , wherein component b) is Mo and Ta 2 O 5 .
7. A sintered product prepared by sintering the composition as claimed in claim 1 .
8. A sputtering target comprising the sintered product of claim 7 .
9. The sintered product as claimed in claim 7 consisting essentially of a) from about 90 to about 99 mole % of Sn0 2 and b) from about 1 to about 10 mole % of the component b).
10. A transparent electroconductive film prepared by forming on the surface of a substrate, a transparent electroconductive layer of a composition consisting essentially of the composition of claim 1 .
11. A sputter target which comprises the composition as claimed in claim 1 .
12. The sputtering target as claimed in claim 11 consisting essentially of a) from about 90 to about 99 mole % of Sn0 2 and b) from about 1 to about 10 mole % of the component b).
13. The sputtering target as claimed in claim 12 , wherein component b) is Mo and Nb 2 O 5 .
14. The sputtering target as claimed in claim 12 , wherein component b) is Mo and NbO.
15. The sputtering target as claimed in claim 12 , wherein component b) is Mo and WO 2 .
16. The sputtering target as claimed in claim 12 , wherein component b) is Mo and Ta 2 O 5 .