IP Library Granted Patent US 8,262,975
Granted Patent B2
US 8,262,975 · App. 12/268,823 · Granted Sep 11, 2012

Self-releasing resist material for nano-imprint processes

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,262,975
App. No.
12/268,823
Granted
Sep 11, 2012
Kind
B2
Abstract

Nanoimprint lithography using resist material with the addition of a surfactant is described. A template release layer is formed on a pattern of a template. A non-ionic surfactant is added to a resist material to form a mixed resist material. The resist material may comprise a hydrocarbon material having an unsaturated bond, such as an acrylate material. The surfactant may comprise polyalkylene glycol or an organically modified polysiloxane. A resist layer is then formed on a substrate from the mixed resist material. The surfactant added to the resist material forms a resist release layer on the surface of the resist layer. The template is then pressed into the resist layer, where the template release layer and the resist release layer are between the pattern of the template and the resist layer.

Claims (29)

1. A method of performing an imprint process, the method comprising:

forming a template release layer on a pattern of a template;

adding a non-ionic surfactant to a resist material to form a mixed resist material, wherein the non-ionic surfactant comprises polyalkylene glycol;

forming a resist layer on a substrate from the mixed resist material, wherein the surfactant added to the resist material forms a resist release layer on the surface of the resist layer; and

pressing the template into the resist layer, wherein the template release layer and the resist release layer are between the pattern of the template and the resist layer.

2. The method of claim 1 wherein the polyalkylene glycol surfactant has a non-polar alkane block and a polar ether block, the polar ether block is more soluble in the resist material than the non-polar alkane block so that the non-polar alkane block separates out along the surface of the resist layer to form the resist release layer.

3. The method of claim 1 wherein the concentration of the surfactant in the resist material is in the range of about 0.05% to 5% by weight.

4. The method of claim 1 wherein the resist material comprises an acrylate material.

5. The method of claim 4 wherein the acrylate material comprises one of a neopentyl glycol dimethacrylate, trimethylpropane triacrylate, propoxylated glyceryl triacrylate, isobornyl methacrylate, or octyldecyl acrylate.

6. The method of claim 1 wherein the template release layer comprises a fluorinated release layer.

7. The method of claim 6 wherein the fluorinated release layer is formed from a perfluoropolyether diacrylate material.

8. The method of claim 1 further comprising:

performing a curing process to cure the resist layer, wherein the pattern from the template is imprinted in the cured resist layer;

separating the template from the cured resist layer; and

performing an etching process to pattern the substrate based on the pattern imprinted in the cured resist layer.

9. A method of performing nanoimprint lithography, the method comprising:

forming a template release layer on a nanometer-scale pattern of a template;

adding a polyalkylene glycol surfactant to a resist material to form a mixed resist material, wherein the resist material comprises a hydrocarbon with an unsaturated bond;

forming a resist layer on a substrate from the mixed resist material, wherein the surfactant added to the resist material forms a resist release layer on the surface of the resist layer; and

pressing the template into the resist layer, wherein the template release layer and the resist release layer are between the pattern of the template and the resist layer.

10. The method of claim 9 wherein the concentration of the polyalkylene glycol surfactant in the resist material is in the range of about 0.05% to 5% by weight.

11. The method of claim 9 wherein the resist material comprises an acrylate material.

12. The method of claim 11 wherein the acrylate material comprises one of a neopentyl glycol dimethacrylate, trimethylpropane triacrylate, propoxylated glyceryl triacrylate, isobornyl methacrylate, or octyldecyl acrylate.

13. The method of claim 9 wherein the template release layer comprises a fluorinated release layer.

14. The method of claim 13 wherein the fluorinated release layer is formed from a perfluoropolyether diacrylate material.

15. The method of claim 9 further comprising:

performing a curing process to cure the resist layer, wherein the pattern from the template is imprinted in the cured resist layer;

separating the template from the cured resist layer; and

performing an etching process to pattern the substrate based on the pattern imprinted in the cured resist layer.

Assignments (7)
PATENT COLLATERAL AGREEMENT - DDTL LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 067045/0156 →
PATENT COLLATERAL AGREEMENT - A&R LOAN AGREEMENT Recorded Aug 21, 2023
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 064715/0001 →
RELEASE OF SECURITY INTEREST AT REEL 052915 FRAME 0566 Recorded Feb 8, 2022
From: JPMORGAN CHASE BANK, N.A.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 059127/0001 →
SECURITY INTEREST Recorded Feb 6, 2020
From: WESTERN DIGITAL TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS AGENT
Reel/Frame 052915/0566 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 6, 2016
From: HGST NETHERLANDS B.V.
To: WESTERN DIGITAL TECHNOLOGIES, INC.
Reel/Frame 040826/0821 →
CHANGE OF NAME Recorded Oct 25, 2012
From: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
To: HGST NETHERLANDS B.V.
Reel/Frame 029341/0777 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 11, 2008
From: BEST, MARGARET E.; GUO, XING-CAI; KARIS, THOMAS E.; KERCHER, DAN S.; MATE, CHARLES M.; WU, TSAI-WEI
To: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
Reel/Frame 021818/0188 →