Structure of high performance combo chip and processing method
View Patent ↗A method for fabricating a chip package is achieved. A seed layer is formed over a silicon wafer. A photoresist layer is formed on the seed layer, an opening in the photoresist layer exposing the seed layer. A first solder bump is formed on the seed layer exposed by the opening. The photoresist layer is removed. The seed layer not under the first solder bump is removed. A second solder bump on a chip is joined to the first solder bump.
1. A chip package comprising:
a printed-circuit-board (PCB)circuit substrate;
an array of contact balls on a bottom side of said PCB circuit substrate;
a first chip over a top side of said PCB circuit substrate;
multiple first metal bumps between said PCB circuit substrate and said first chip and vertically under said first chip, wherein said multiple first metal bumps have multiple bottom ends on said top side of said PCB circuit substrate, wherein no preformed substrate is between said multiple first metal bumps and said first chip;
a second chip over said first chip; and
multiple second metal bumps between said first and second chips and vertically under said second chip, wherein multiple second metal bumps have multiple top ends on said second chip and multiple bottom ends on said first chip.
2. The chip package of claim 1 further comprising an underfill between said first chip and said PCB circuit substrate and between said multiple first metal bumps.
3. The chip package of claim 1 further comprising an underfill between said first and second chips and between said multiple second metal bumps.
4. The chip package of claim 1 , wherein said multiple first metal bumps comprise a solder.
5. The chip package of claim 1 , wherein said multiple second metal bumps comprise a solder.
6. The chip package of claim 1 , wherein said multiple bottom ends of said multiple second metal bumps are on multiple first metal contact points of said first chip, and said multiple top ends of said multiple second metal bumps are on multiple second metal contact points of said second chip.
7. The chip package of claim 1 , wherein said PCB circuit substrate comprises multiple interconnect layers in said PCB circuit substrate, wherein said multiple interconnect layers connect said multiple first metal bumps to said array of contact balls.
8. The chip package of claim 1 , wherein said first chip comprises a memory chip.
9. The chip package of claim 1 , wherein said first chip comprises a logic chip.
10. A chip package comprising:
a circuit substrate;
an array of contact balls on a bottom side of said circuit substrate;
a silicon substrate over a top side of said circuit substrate;
multiple first metal bumps between said circuit substrate and said silicon substrate and vertically under said silicon substrate, wherein said multiple first metal bumps have multiple bottom ends on said top side of said circuit substrate;
a first underfill layer between said circuit substrate and said silicon substrate and between said multiple first metal bumps, wherein said first underfill layer contacts said top side of said circuit substrate;
a chip over said silicon substrate;
multiple second metal bumps between said chip and said silicon substrate and vertically under said chip, wherein said multiple second metal bumps have multiple top ends on said chip; and
a second underfill layer between said chip and said silicon substrate and between said multiple second metal bumps, wherein said second underfill layer contacts said chip.
11. The chip package of claim 10 , wherein said circuit substrate comprises a printed circuit board.
12. The chip package of claim 10 , wherein said multiple first metal bumps comprise a solder.
13. The chip package of claim 10 , wherein said multiple second metal bumps comprise a solder.
14. The chip package of claim 10 , wherein said circuit substrate comprises multiple interconnect layers in said circuit substrate, wherein said multiple interconnect layers connect said multiple first metal bumps to said array of contact balls.
15. The chip package of claim 10 , wherein no preformed substrate is between said multiple first metal bumps and said silicon substrate.
16. The chip package of claim 10 , wherein no preformed substrate is between said multiple second metal bumps and said silicon substrate.
17. A chip package comprising:
a circuit substrate;
an array of contact balls on a bottom side of said circuit substrate;
a dielectric layer over a top side of said circuit substrate;
a first chip in said dielectric layer, wherein said first chip is between a left portion of said dielectric layer and a right portion of said dielectric layer, wherein said left portion of said dielectric layer contacts a left sidewall of said first chip, and wherein said right portion of said dielectric layer contacts a right sidewall of said first chip;
a metal via passing vertically through said left portion of said dielectric layer;
a patterned metal layer over said circuit substrate, under said dielectric layer and under a bottom side said fist chip, wherein said patterned metal layer contacts a bottom end of said metal via, wherein said patterned metal layer is connected to said metal via;
a second chip over said dielectric layer and said first chip, wherein said patterned metal layer is connected to said second chip through said metal via; and
multiple metal bumps between said first chip and said second chip and vertically under said second chip, wherein said multiple metal bumps have multiple bottom ends on said first chip.
18. The chip package of claim 17 , wherein said second chip is further over said left portion of said dielectric layer.
19. The chip package of claim 17 , wherein said second chip is further over said right portion of said dielectric layer.
20. The chip package of claim 17 , wherein said circuit substrate comprises a printed circuit board.
21. The chip package of claim 17 , wherein said second chip is further over said metal via.
22. The chip package of claim 17 , wherein said circuit substrate comprises multiple interconnect layers in said circuit substrate, wherein said multiple interconnect layers are connected to said array of contact balls.
23. A chip package comprising:
a circuit substrate;
an array of contact balls on a bottom side of said circuit substrate;
a first chip over a top side of said circuit substrate;
multiple first metal bumps between said circuit substrate and said first chip and vertically under said first chip, wherein said multiple first metal bumps have multiple bottom ends on said top side of said circuit substrate;
a first underfill layer between said first chip and said circuit substrate and between said multiple first metal bumps, wherein said first underfill layer contacts said top side of said circuit substrate;
a second chip over said first chip;
multiple second metal bumps between said first and second chips and vertically under said second chip, wherein said multiple second metal bumps have multiple top ends on said second chip and multiple bottom ends on said first chip; and
a second underfill layer between said first and second chips and between said multiple second metal bumps, wherein said second underfill layer contacts said first and second chips.
24. The chip package of claim 23 , wherein said multiple first metal bumps comprise a solder.
25. The chip package of claim 23 , wherein said multiple second metal bumps comprise a solder.
26. The chip package of claim 23 , wherein said first chip comprises a memory chip.
27. The chip package of claim 23 , wherein said first chip comprises a logic chip.
28. The chip package of claim 23 , wherein no preformed substrate is between said multiple first metal bumps and said first chip.
29. A chip package comprising:
a circuit substrate;
an array of contact solder balls on a bottom side of said circuit substrate; and
a packaged semiconductor device joining a top side of said circuit substrate, wherein said packaged semiconductor device comprises a dielectric layer, a first chip between a left portion of said dielectric layer and a right portion of said dielectric layer,
wherein said first chip has a left sidewall contacting said left portion of said dielectric layer and a right sidewall contacting said right portion of said dielectric layer, a second chip having a first portion vertically over said first chip and a second portion overhanging said first chip, wherein said second chip has a bottom surface contacting said dielectric layer, a metal interconnect connecting said first chip and said second chip, and multiple metal bumps having multiple bottom ends on said top side of said circuit substrate.
30. The chip package of claim 29 , wherein said first chip comprises a memory chip.
31. The chip package of claim 29 , wherein said multiple metal bumps comprise a solder.
32. The chip package of claim 29 , wherein said dielectric layer has a left sidewall and a right sidewall opposite and substantially parallel to said left sidewall of said dielectric layer.