Use of mesa structures for supporting heaters on an integrated circuit
View Patent ↗An integrated circuit is joined to a liquid container. The integrated circuit includes a passivation layer. A resistor is used as a heater to heat fluid in a liquid container. A mesa structure is formed over the passivation layer. The mesa structure is in contact with the resistor and is used to more effectively deliver heat from the resistor to the liquid container.
1. A method for making an optical switch comprising a planar light circuit (PLC), an integrated circuit (IC) and a mesa structure, the method comprising:
forming a passivation layer atop the IC;
forming the mesa structure atop the passivation layer such that the mesa structure is separated from the IC by the passivation layer and operably connected to metal leads corresponding thereto;
forming a waveguide and a trench in an underside of the PLC, the trench being configured to intersect the waveguide at a cross-point disposed above the mesa structure, and
forming, for positioning between the mesa structure and the PLC, at least top and bottom resistive layers, the top and bottom resistive layers being separated by an insulating layer disposed therebetween, a first portion of the bottom resistive layer not covered by the metal leads having a surface area larger than a second portion of the top resistive layer not covered by the metal leads, the top and bottom resistive layers being configured to heat the liquid in the trench and thereby effect a change in an index of refraction of the liquid in response to electrical current passing through the top and bottom resistive layers;
wherein at least portions of the mesa structure project upwardly above the passivation layer and the top surface of the IC, and at least a portion of the bottom resistive layer is conformably disposed above the upwardly projecting portion of the mesa structure and thereby placed within close proximity to the liquid in the trench to effect efficient heating of the liquid.
2. A method as in claim 1 wherein the mesa structure comprises a pyrolytic material.
3. A method as in claim 2 , wherein the mesa structure comprises sputtered silicon.
4. A method as in claim 1 , wherein forming the mesa structure further comprises:
forming a first TEOS layer;
performing a resistive etch back of the first TEOS layer; and,
forming a second TEOS layer over the first TEOS layer.
5. A method as in claim 1 , further comprising:
forming vias through the mesa structure.
6. A method as in claim 1 , further comprising:
joining the PLC to the IC by at least one of wafer bonding and soldering.
7. A method as in claim 1 , further comprising:
configuring the bottom resistive layer to assist heating of the top resistive layer during a burn-in period.
8. A method as in claim 1 , further comprising:
forming a pillar structure over the resistor.
9. A method as in claim 1 , further comprising:
configuring at least one of the top resistive layer and the bottom resistive layer to form a bubble in the liquid when electrical current is passed therethrough.