Method of manufacture for microelectromechanical devices
View Patent ↗A method of manufacturing a microelectromechanical device includes forming at least two conductive layers on a substrate. An isolation layer is formed between the two conductive layers. The conductive layers are electrically coupled together and then the isolation layer is removed to form a gap between the conductive layers. The electrical coupling of the layers mitigates or eliminates the effects of electrostatic charge build up on the device during the removal process.
1. A method of manufacturing an electromechanical device, the method comprising:
forming a first conductive layer;
forming an isolation layer on the first conductive layer;
forming a second conductive layer on the isolation layer such that the isolation layer is disposed between the first conductive layer and the second conductive layer, wherein the second conductive layer is configured to allow portions of the second conductive layer to deflect towards the first conductive layer and contact the first conductive layer after the isolation layer is removed;
prior to etching the isolation layer, electrically coupling the first conductive layer to the second conductive layer;
after the first conductive layer to the second conductive layer are electrically coupled, etching the isolation layer to form a gap between the first and second conductive layers; and
electrically decoupling the first conductive layer from the second conductive layer after removing the isolation layer.
2. The method of claim 1 , wherein performing an etch comprises performing a dry gas etch.
3. The method of claim 1 , wherein performing an etch comprises performing a dry vapor-phase etch.
4. The method of claim 1 , wherein performing an etch comprises performing a xenon difluoride etch.
5. The method of claim 1 , wherein electrically coupling the first conductive layer to the second conductive layer comprises coupling the first and second conductive layers externally.
6. The method of claim 1 , wherein electrically coupling the first conductive layer to the second conductive layer comprises coupling the first and second conductive layers together internally.
7. The method of claim 1 , wherein electrically coupling the first conductive layer to the second conductive layer comprises electrically coupling the first conductive layer to the second conductive layer in an inactive area of the substrate.
8. The method of claim 1 , wherein electrically coupling comprises electrically coupling the first conductive layer to the second conductive layer during fabrication of at least a portion of the electromechanical device.
9. The method of claim 1 , further comprising forming a third conductive layer.
10. The method of claim 9 , wherein forming the isolation layer comprises forming a first isolation layer and a second isolation layer.
11. The method of claim 1 , wherein electrically coupling the first conductive layer to the second conductive layer comprises using a gas.
12. The method of claim 11 , wherein the gas is an ionized gas.
13. The method of claim 1 , wherein etching the isolation layer comprises performing a vapor-phase etch with a first gas, and wherein electrically coupling the first conductive layer to the second layer together comprises using a second gas.
14. The method of claim 13 , wherein the electromechanical device is exposed to both the first gas and the second gas simultaneously during etching.
15. The method of claim 13 , wherein the first gas comprises xenon difluoride.
16. The method of claim 13 , wherein the second gas is an ionized gas.
17. A method of manufacturing a electromechanical device comprising a first conductive layer, a second conductive layer, and an isolation layer between the first and second conductive layers, the method comprising:
prior to etching the isolation layer, electrically coupling the first conductive layer to the second conductive layer;
etching the isolation layer to form a gap between the first and second conductive layers; and
electrically decoupling the first conductive layer from the second conductive layer after etching the isolation layer.