Back side contact solar cell with doped polysilicon regions
View Patent ↗In one embodiment, a back side contact solar cell includes a tunnel oxide layer formed on a back side of a substrate. A polysilicon layer is formed on the tunnel oxide layer, and dopant sources are formed on the polysilicon layer. Dopants from the dopant sources are diffused into the polysilicon layer to form p-type and n-type regions therein. The p-type and n-type regions form p-n junctions that, among other advantages, allow for relatively high conversion efficiency.
1. A method of fabricating a back side contact solar cell, the method comprising:
forming a first oxide layer over a back side of a solar cell substrate;
forming a first polysilicon layer over the first oxide layer;
forming a p-type dopant source and an n-type dopant source over the first polysilicon layer; and
diffusing dopants from the p-type dopant source and the n-type dopant source into the first polysilicon layer to form a p-type region and an n-type region in the first polysilicon layer, the p-type region and the n-type region forming a p-n junction in a continuous portion of the first polysilicon layer.
2. The method of claim 1 wherein the p-type dopant source comprises a boron-doped silicon dioxide.
3. The method of claim 1 wherein the n-type dopant source comprises a phosphorus-doped silicon dioxide.
4. The method of claim 1 further comprising:
forming a second oxide layer over a front side of the solar cell substrate;
forming a second polysilicon layer over the second oxide layer;
forming a second n-type dopant source over the second polysilicon layer; and
diffusing dopants from the second n-type dopant source into the second polysilicon layer.
5. The method of claim 1 further comprising:
texturing a front side of the solar cell substrate.
6. The method of claim 5 further comprising:
diffusing n-type dopants into the solar cell substrate by way of the front side of the solar cell substrate.
7. The method of claim 1 wherein a first undoped silicon dioxide layer is formed between the p-type dopant source and the n-type dopant source prior to doping the first polysilicon layer.
8. The method of claim 7 wherein a second undoped silicon dioxide layer is formed over the n-type dopant source prior to doping the first polysilicon layer to prevent dopants from the n-type dopant source from escaping into a furnace environment during the doping of the first polysilicon layer.
9. A back side contact solar cell comprising:
a substrate having a front side and a back side, the front side of the substrate being configured to face the sun to receive solar radiation during normal operation;
a first oxide layer formed over the back side of the substrate;
a first doped polysilicon layer formed over the first oxide layer;
a plurality of p-type and n-type regions in a continuous portion of the first doped polysilicon layer, each adjacent p-type region and n-type region in the plurality of p-type and n-type regions forming a p-n junction of the solar cell; and
metal contacts coupled to the p-type and n-type regions, the metal contacts being configured to allow an external device to be coupled to the solar cell.
10. The back side contact solar cell of claim 9 further comprising:
an anti-reflective coating formed over a textured surface on the front side of the substrate.
11. The back side contact solar cell of claim 9 further comprising:
a p-type dopant source formed over the first doped polysilicon layer; and
an n-type dopant source formed over the p-type dopant source and the first doped polysilicon layer.
12. The back side contact solar cell of claim 11 further comprising:
an undoped silicon dioxide layer formed between the p-type dopant source and the n-type dopant source.
13. The back side contact solar cell of claim 1 wherein the first oxide layer has a thickness in a range of 7 to 20 Angstroms.
14. The back side contact solar cell of claim 9 further comprising:
a second oxide layer formed over a textured surface on the front side of the substrate; and
a second doped polysilicon layer formed over the second oxide layer.
15. The back side contact solar cell of claim 14 wherein the second doped polysilicon layer is doped with an n-type dopant.
16. The back side contact solar cell of claim 14 further comprising an n-type dopant source formed over the second doped polysilicon layer.
17. A back side contact solar cell comprising:
a silicon wafer;
an oxide layer formed on a back side of the wafer; and
a doped polysilicon layer formed on the oxide layer, the doped polysilicon layer having a continuous portion having boron-doped regions and phosphorus-doped regions, each adjacent boron-doped region and phosphorus-doped region forming a p-n junction of the solar cell.
18. The back side contact solar cell of claim 17 further comprising:
metal contacts formed to connect to the boron-doped and phosphorus-doped regions for allowing the solar cell to be coupled to an external circuit.