Organic thin-film transistors
A thin-film transistor uses a semiconducting layer comprising a semiconducting material of (A): where X, Ar, Ar′, R 1 , R 2 , R 3 , R 4 , R 5 , a, b, m, and n are as defined herein. The transistor has improved performance.
1. A thin-film transistor comprising a semiconducting layer, wherein the semiconducting layer comprises a semiconducting material of Formula (A):
wherein X is independently selected from S, Se, O, and NR 6 ;
R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, halogen, —CN, and —NO 2 ;
Ar and Ar′ are independently a conjugated divalent moiety;
a and b are integers of from 0 to about 10;
m is 0 or 1; and
n is an integer and is at least 2.
2. The transistor of claim 1 , wherein each X is sulfur.
3. The transistor of claim 1 , wherein (a+b)>0.
4. The transistor of claim 1 , wherein the semiconducting material has a weight average molecular weight of from about 2,000 to about 200,000.
5. The transistor of claim 1 , wherein Ar and Ar′ independently comprise a moiety selected from
and combinations thereof, wherein R′ is independently selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, halogen, —CN, and —NO 2 .
6. The transistor of claim 5 , wherein Ar and Ar′ are both
and a and b are each from 1 to about 5.
7. A thin-film transistor comprising a semiconducting layer, wherein the semiconducting layer comprises a semiconducting material of Formula (I), (II), (III), or (IV):
wherein X is independently selected from S, Se, O, and NR 6 ;
R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, halogen, —CN, and —NO 2 ;
Ar and Ar′ are independently a conjugated divalent moiety;
a and b are integers of from 0 to about 10; and
n is an integer and is at least 2.
8. The transistor of claim 7 , wherein each X is sulfur.
9. The transistor of claim 7 , wherein at least one of R 1 , R 2 , R 3 , R 4 , and R 5 is alkyl.
10. The transistor of claim 7 , wherein R 1 , R 2 , R 3 , R 4 , and R 5 are hydrogen.
11. The transistor of claim 7 , wherein the semiconducting material has a weight average molecular weight of from about 2,000 to about 200,000.
12. The thin-film transistor of claim 7 , wherein the semiconducting layer comprises a semiconducting material selected from Formula (I) or (II):
wherein n is an integer from 2 to about 5,000.
13. The transistor of claim 12 , wherein each X is sulfur and R 1 , R 2 , and R 3 are hydrogen.
14. The transistor of claim 12 , wherein each X is sulfur; one of R 1 , R 2 , and R 3 , is alkyl, and the other two of R 1 , R 2 , and R 3 are hydrogen.
15. The thin-film transistor of claim 7 , wherein the semiconducting layer comprises a semiconducting material selected from Formula (III) or (IV):
wherein n is an integer from 2 to about 5,000.
16. The transistor of claim 15 , wherein each X is sulfur and R 1 , R 2 , R 3 , R 4 , and R 5 are hydrogen.
17. The transistor of claim 15 , wherein each X is sulfur; one of R 1 , R 2 , R 3 , R 4 , and R 5 is alkyl, and the other four of R 1 , R 2 , R 3 , R 4 , and R 5 are hydrogen.
18. A semiconducting composition comprising a semiconducting material of Formula (A):
wherein X is independently selected from S, Se, O, and NR 6 ;
R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, halogen, —CN, and —NO 2 ;
Ar and Ar′ are independently a conjugated divalent moiety;
a and b are integers of from 0 to about 10;
m is 0 or 1; and
n is an integer and is at least 2.
19. A semiconducting composition comprising a semiconducting material of Formula (I), (II), (III), or (IV):
wherein X is independently selected from S, Se, O, and NR 6 ;
R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, halogen, —CN, and —NO 2 ;
Ar and Ar′ are independently a conjugated divalent moiety;
a and b are integers of from 0 to about 10; and
n is an integer and is at least 2.
20. The composition of claim 18 , wherein each X is sulfur.
21. The composition of claim 18 , wherein R 1 , R 2 , R 3 , R 4 , and R 5 are hydrogen.
22. The composition of claim 18 , wherein the semiconducting material has a weight average molecular weight of from about 2,000 to about 200,000.
23. The composition of claim 18 , wherein Ar and Ar′ independently comprise a moiety selected from
and combinations thereof, wherein R′ is independently selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, halogen, —CN, and —NO 2 .