Ceramic material, sintered ceramic and component made therefrom, production method and use of the ceramic

1. A ceramic material, comprising:

a two-phase mixture xA+(1−x)B,

wherein 0≦x≦1,

wherein phase A is based on a cubic to tetragonal modification of Bi 3 NbO 7 ,

wherein phase B is based on a monoclinic pyrochlore modification of Bi 2 (Zn 2/3 Nb 4/3 )O 7 , and

wherein the two phases can be varied such that Bi, Zn and Nb in the entire material are each replaced up to a proportion of 30 mol % by other metals, but Nb can be replaced up to 100% by Ta.

2. The material according to claim 1 , wherein Bi can be replaced up to a proportion of 30 mol % by one or more elements selected from the group consisting of Ca, Sr, Ba, Pb, Cd, Y, La and a rare-earth element with an atomic number of 58-71.

3. The material according to claim 1 , wherein Zn can be replaced up to a proportion of 30 mol % by one or more elements selected from the group consisting of Mg, Ca, Co, Mn, Ni, Fe, Cr and Cu.

4. The material according to claim 1 , wherein Nb can be replaced up to a proportion of 30 mol % by one or more elements selected from Sn, Ti, Hf, Sb, Ta, V, W and Mo.

5. The material according to claim 1 , defined in the phase diagram of the elements Zn—Nb—Bi by the four points A, B, C, D with

A: Zn=4.0; Nb=30.0; Bi=66.0

B: Zn=7.8; Nb=25.0; Bi=67.2

C: Zn=16.0; Nb=30.0; Bi=54.0

D: Zn=15.0; Nb=35.0; Bi=50.0.

6. The material according to claim 1 , wherein the ceramic material consists of the two-phase mixture xA+(1−x)B.

7. A sintered ceramic of a material according to claim 1 , with a sintering temperature below 960° C.

8. The ceramic according to claim 7 , with a dielectric constant of 65-95.

9. The ceramic according to claim 7 , with a dielectric quality factor of more than 800 at a measurement frequency of 1 GHz.

10. The ceramic according to claim 7 , wherein the relative molar ratio x of phase A in the ceramic material is 0.10 to 0.80.

11. The ceramic according to claim 7 , wherein the phases in the mixture are present as pure phases of the main components.

12. The ceramic according to claim 7 , wherein the diameters of the domains of the pure phases A and B are less than or equal to 10 μm.

13. An electrical component comprising a ceramic according to claim 7 .

14. An electrical component comprising:

a multilayer structure comprising a plurality of ceramic layers arranged alternately with structured metallization levels and sintered into a monolithic stack, each of the ceramic layers comprising a two-phase mixture xA+(1−x)B, wherein 0<x<1, wherein phase A is based on a cubic to tetragonal modification of Bi 3 NbO 7 , wherein phase B is based on a monoclinic pyrochlore modification of Bi 2 (Zn 2/3 Nb 4/3 )O 7 , and wherein the two phases can be varied such that Bi, Zn and Nb in the entire material are each replaced up to a proportion of 30 mol % by other metals, but Nb can be replaced up to 100% by Ta;

a plurality of passive components formed in the multilayer structure; and

a plurality of through connections, wherein the structured metallization levels are connected to one another by means of the through connections thereby interconnecting the passive components.

15. The component according to claim 14 , wherein the passive components are interconnected to form an LC filter.

16. The component according to claim 15 , wherein the passive components are interconnected to form an LC filter in LTCC technology for mobile telephony applications for the frequency range of 1-5 GHz.

17. The component according to claim 14 , wherein the multilayer structure comprises a substrate for electrical components.

18. A method for producing a ceramic material, the method comprising:

producing pure phases A and B separately from one another, phase A being based on a cubic to tetragonal modification of Bi 3 NbO 7 and phase B being based on a monoclinic pyrochlore modification of Bi 2 (Zn 2/3 Nb 4/3 )O 7 ,

grinding each of the pure phases to a powder; and

mixing powders of the two pure phases in a predetermined ratio to form a two-phase mixture xA+(1−x)B, wherein 0<x<1, wherein the two phases can be varied such that Bi, Zn and Nb in the entire material are each replaced up to a proportion of 30 mol % by other metals, but Nb can be replaced up to 100% by Ta.

19. The method according to claim 18 , further comprising processing the mixture into a green body and sintering.

20. The method according to claim 19 , wherein the sintering is performed at a temperature of less than 960° C.

21. The method according to claim 18 , wherein producing pure phases A and B comprises producing the pure phases by a mixed oxide process.

22. The method according to claim 18 , further comprising:

forming films as green bodies using the mixture punching through connections in the films;

filling the through connections with a conductive material;

printing the films with a metallization structure of an electrode material; and

stacking a plurality of different films one above the other;

laminating the stacked films; and

sintering the stacked films.