Nanocrystal structures
View Patent ↗A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
1. A method of forming a laser comprising:
selecting a semiconductor nanocrystal having a diameter and a composition; and
placing the semiconductor nanocrystal on a grating arranged to provide feedback.
2. The method of claim 1 , wherein the diameter of the nanocrystal is selected to emit at a particular wavelength to produce a laser having a particular output energy.
3. The method of claim 1 , wherein the composition of the nanocrystal is selected to emit at a particular wavelength to produce a laser having a particular output energy.
4. The method of claim 3 , wherein the diameter of the nanocrystal is selected to emit at a particular wavelength to produce a laser having a particular output energy.
5. The method of claim 1 , wherein the grating is selected to have a periodicity selected to produce a laser having a particular output energy.
6. The method of claim 1 , further comprising forming a layer including the semiconductor nanocrystal on a surface of the grating.
7. The method of claim 1 , further comprising forming a layer including a monodisperse population of semiconductor nanocrystals on a surface of the grating.
8. The method of claim 7 , wherein the layer includes greater than 5% by volume of semiconductor nanocrystals.
9. The method of claim 1 , wherein the semiconductor nanocrystal includes a plurality of semiconductor nanocrystals, wherein the plurality of semiconductor nanocrystals include a Group II-VI compound, and wherein the plurality of semiconductor nanocrystals are distributed in a metal oxide matrix.