Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers
View Patent ↗A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers is disclosed for reducing a read gap, in order to perform magnetic recording at higher linear densities. The ferromagnetic amorphous buffer and polycrystalline seed layers couples to a ferromagnetic lower shield, thus acting as part of the ferromagnetic lower shield and defining the upper surface of the ferromagnetic polycrystalline seed layer as the lower bound of the read gap. In addition, a CPP TMR or GMR read sensor with nonmagnetic and ferromagnetic cap layers is also disclosed for reducing the read gap, in order to perform magnetic recording at even higher linear densities. The ferromagnetic cap layer couples to a ferromagnetic upper shield, thus acting as part of the ferromagnetic upper shield and defining the lower surface of the ferromagnetic cap layer as the upper bound of the read gap.
1. A CPP tunneling magnetoresistance (TMR) read sensor, comprising:
a ferromagnetic amorphous buffer layer;
a ferromagnetic polycrystalline seed layer on the buffer layer;
an antiferromagnetic pinning layer on the seed layer;
a ferromagnetic keeper layer on the pinning layer;
an antiparallel coupling, layer on the keeper layer;
multiple ferromagnetic reference layers on the antiparallel coupling layer;
a barrier layer on the multiple reference layers;
multiple ferromagnetic sense layers on the barrier layer;
a nonmagnetic cap layer on the multiple sense layers; and
a ferromagnetic cap layer on the nonmagnetic cap layer;
wherein the multiple sense layers comprise:
a first sense layer formed by a Co—Fe film;
a second sense layer formed by a Co—Fe—B film; and
a third sense layer formed by a Co—Fe—Hf film.
2. The CPP TMR read sensor of claim 1 wherein the ferromagnetic amorphous buffer layer is formed by a Co—Fe—X film (where X is Hf, Zr or Y) containing Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, and X with a content ranging from 6 to 30 at %, and having a thickness ranging from 0.4 to 20 nm.
3. The CPP TMR read sensor of claim 1 wherein the ferromagnetic polycrystalline seed layer is formed by a Ni—Fe—X film (where X is Cu, Cr, Rh, Ru, Ti or W) containing Ni with a content ranging from 60 to 100 at %, Fe with a content ranging from 0 to 40 at %, and X with a content ranging from 0 to 10 at %, and having a thickness ranging from 2 to 40 nm.
4. The CPP TMR read sensor of claim 1 wherein the antiferromagnetic pinning layer is formed by an Ir-Mn film.
5. The CPP TMR read sensor of claim 1 wherein the ferromagnetic keeper layer is formed by a Co—Fe film.
6. The CPP TMR read sensor of claim 1 wherein the antiparallel coupling layer is formed by a Ru film.
7. The CPP TMR read sensor of claim 1 wherein the multiple ferromagnetic reference layer further comprises a first reference layer formed by a Co—Fe—B film and a second reference layer formed by a Co—Fe film.
8. The CPP TMR read sensor of claim 1 wherein the barrier layer is formed by an electrically insulating nanomagnetic MgO x film.
9. The CPP TMR read sensor of claim 1 wherein the nonmagnetic cap layer is formed by a Ta film.
10. A CPP tunneling magnetoresistance (TMR) read sensor, comprising:
a ferromagnetic amorphous buffer layer;
a ferromagnetic polycrystalline seed layer on the buffer layer;
an antiferromagnetic pinning layer on the seed layer;
a ferromagnetic keeper layer on the pinning laver;
an antiparallel coupling layer on the keeper layer;
multiple ferromagnetic reference layers on the antiparallel coupling layer;
a barrier layer on the multiple reference layers;
multiple ferromagnetic sense layers on the barrier layer;
a nonmagnetic cap layer on the multiple sense layers; and
a ferromagnetic cap layer on the nonmagnetic cap layer;
wherein the ferromagnetic cap layer is formed by a Ni—Fe—X film (where X is Cu, Cr, Rh, Ru, Ti or W) containing Ni with a content ranging from 60 to 100 at %, Fe with a content ranging from 0 to 40 at %, and X with a content ranging from 0 to 10 at %, and having a thickness ranging from 2 to 40 nm.
11. A CPP giant magnetoresistance (GMR) read sensor, comprising:
a ferromagnetic amorphous buffer layer;
a ferromagnetic polycrystalline seed layer on the buffer layer;
an antiferromagnetic pinning layer on the seed layer;
a ferromagnetic keeper layer on the pinning layer;
an antiparallel coupling layer on the keeper layer;
ferromagnetic reference layer on the antiparallel coupling layer;
a spacer layer on the reference layer;
multiple ferromagnetic sense layers on the spacer layer; and
a ferromagnetic cap layer on the sense layer;
wherein the multiple sense layers comprise:
a first sense layer formed by a Co—Fe film;
a second sense layer formed by a Co—Fe—B film; and
a third sense layer formed by a Co—Fe—Hf film.
12. The CPP GMR read sensor of claim 11 wherein the ferromagnetic amorphous buffer layer is formed by a Co—Fe—X film (where X is Hf, Zr or Y) containing Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, and X with a content ranging from 6 to 30 at %, and having a thickness ranging from 0.4 to 20 nm.
13. The GMR read sensor of claim 11 wherein the ferromagnetic polycrystalline seed layer is formed by a Ni—Fe—X film (where Y is Cu, Cr, Rh, Ru, Ti or W) containing Ni with a content ranging from 60 to 100 at %, Fe with a content ranging from 0 to 40 at %, and X with a content ranging from 0 to 10 at %, and having a thickness ranging from 2 to 40 nm.
14. The GMR read sensor of claim 11 wherein the ferromagnetic cap layer is formed by a Ni—Fe—X film (where X is Cu, Cr, Rh, Ru, Ti or W) containing Ni with a content ranging from 60 to 100 at %, Fe with a content ranging from 0 to 40 at %, and X with a content ranging from 0 to 10 at %, and having a thickness ranging from 2 to 40 nm.
15. The CPP GMR read sensor of claim 11 wherein an additional ferromagnetic reference layer formed by a Co—Fe—X film (where X is Hf, Zr, Y, Al, Ge or Si) is incorporated.
16. The CPP GMR read sensor of claim 11 wherein the spacer layer is formed by an electrically conducting nonmagnetic Cu—O film.
17. The CPP GMR read sensor of claim 11 wherein an additional ferromagnetic sense layer formed by a Ni—Fe—X film (where X is Cu, Cr, Rh, Ru, Ti or W) is incorporated.
18. A dual CPP GMR read sensor, comprising:
a ferromagnetic amorphous buffer layer;
a ferromagnetic polycrystalline seed layer on the buffer layer;
a first antiferromagnetic pinning layer on the seed layer;
a first ferromagnetic keeper layer on the first pinning layer;
a first antiparallel coupling layer on the first keeper layer;
a first ferromagnetic reference layer on the first antiparallel coupling layer;
a first nonmagnetic spacer layer on the first reference layer;
multiple ferromagnetic sense layers on the first spacer layer;
a second nonmagnetic spacer layer on the sense layer;
a second ferromagnetic reference layer on the second spacer layer;
a second antiparallel coupling layer on the second reference layer;
a second ferromagnetic keeper layer on the second reference layer;
a second antiferromagnetic pinning layer on the second keeper layer; and
a ferromagnetic cap layer on second pinning layer;
wherein the multiple sense layers comprise:
a first sense layer formed by a Co—Fe film;
a second sense layer formed by a Co—Fe—B film; and
a third sense layer formed by a Co—Fe—Hf film.
19. The CPP GMR read sensor of claim 18 wherein the ferromagnetic amorphous buffer layer is formed by a Co—Fe—X film (where X is Hf, Zr or Y) containing Co with a content ranging from 60 to 80 at %, Fe with a content ranging from 0 to 40 at %, and X with a content ranging from 6 to 30 at %, and having a thickness ranging from 0.4 to 20 nm.
20. The CPP GMR read sensor of claim 18 wherein the ferromagnetic polycrystalline seed layer is formed by a Ni—Fe—X film (where X is Cu, Cr, Rh, Ru, Ti or W) containing Ni with a content ranging from 60 to 100 at %, Fe with a content ranging from 0 to 40 at %, and X with a content ranging from 0 to 10 at %, and having a thickness ranging from 2 to 40 nm.