WIRING BOARD
A wiring board includes an insulating board having a top surface arranged to have an electronic component mounted thereto, a conductor pattern formed on the top surface of the insulating board, and a heat emitting layer made of heat-emitting material covering the conductor pattern. The heat-emitting material has an emissivity not less than 0.8 for an electromagnetic wave having a wavelength λ=0.002898/T at a temperature T ranging from 293K to 473K. This wiring board suppresses the temperature rise of the electronic component.
1 . A wiring board arranged to have an electronic component mounted thereto, said wiring board comprising:
an insulating board having a top surface and a bottom surface opposite to the top surface, the top surface arranged to have the electronic component mounted thereto;
a conductor pattern formed on the top surface of the insulating board, the conductor pattern being arranged to be connected to the electronic component; and
a first heat emitting layer made of first heat-emitting material covering the conductor pattern,
wherein the first heat-emitting material has an emissivity not less than 0.8 for an electromagnetic wave having a wavelength λ=0.002898/T at a temperature T ranging from 293K to 473K.
2 . The wiring board of claim 1 , further comprising
a resin layer provided on the conductor pattern, wherein
the first heat emitting layer is provided on the resin layer, and
the resin layer has a reflectivity not higher than 10% for an electromagnetic wave having a wavelength ranging from 6.1 μm to 9.9 μm.
3 . The wiring board of claim 1 , wherein the first heat emitting layer is provided on the conductor pattern.
4 . The wiring board of claim 3 , wherein the first heat emitting layer is provided partially on the conductor pattern.
5 . The wiring board of claim 3 , wherein the first heat emitting layer is located also on the top surface of the insulating board.
6 . The wiring board of claim 1 , wherein the first heat emitting layer also covers the top surface of the insulating resin.
7 . The wiring board of claim 1 , wherein an average emissivity of the first heat-emitting material for an electromagnetic wave having a wavelength ranging from 9.0 μm to 9.5 μm is higher than an average emissivity of the first heat-emitting material for an electromagnetic wave having a wavelength ranging from 6.5 μm to 7.0 μm.
8 . The wiring board of claim 1 , further comprising
a second heat emitting layer made of second heat-emitting material provided on the bottom surface of the insulating board, wherein
the second heat-emitting material has an emissivity not less than 0.8 for an electromagnetic wave having a wavelength λ=0.002898/T at temperature T ranging from 293K to 473K, and
an average emissivity of the second heat-emitting material for an electromagnetic wave having a wavelength ranging from 9.0 μm to 9.5 μm is higher than an average emissivity of the first heat-emitting material for an electromagnetic wave having a wavelength ranging that between 9.0 μm to 9.5 μm.
9 . The wiring board of claim 8 , further comprising
a third heat emitting layer made of third heat-emitting material arranged to be provided on a surface of the electronic component,
wherein an emissivity of the third hear-emitting material for an electromagnetic wave having a wavelength λ=0.002898/T at temperature T ranging from 293K to 473K.
10 . The wiring board of claim 1 , wherein the first heat-emitting material contains one of insulating particles and semiconductor particles, the one of the insulating particles and the semiconductor particles having an emissivity not less than 0.9 doe an electromagnetic wave having a wavelength λ=0.002898/T at a temperature T of the first heat-emitting material ranging from 293K to 473K.
11 . The wiring board of claim 1 , wherein the conductor pattern is embedded in the top surface of the insulating board such that the conductor is exposed at the top surface of the insulating board.
12 . The wiring board of claim 1 , further comprising a second heat emitting layer made of second heat-emitting material arranged to be provided on a surface of the electronic component, wherein the second heat-emitting material has an emissivity not less than 0.8 for an electromagnetic wave having a wavelength λ=0.002898/T at a temperature T of the second heat-emitting material ranging from 293K to 473K.
13 . A wiring board arranged to have an electronic component mounted thereto, said wiring board comprising:
an insulating board having a top surface and a bottom surface opposite to the top surface, the top surface being arranged to have the electronic component mounted thereto;
a conductor pattern provided on the top surface of the insulating board, the conductor patter being arranged to be connected to the electronic component; and
a heat emitting layer covering the conductor pattern, the heat emitting layer containing 5.0 vol % or more of N-type semiconductor particles.
14 . The wiring board of claim 13 , wherein the heat emitting layer contains 5.0 vol % to 95 vol % of the N-type semiconductor particles.
15 . The wiring board of claim 13 , further comprising a resin layer provided on the conductor pattern, wherein the heat emitting layer is provided on the resin layer.
16 . The wiring board of claim 13 , wherein the heat emitting layer is provided on the conductor pattern.
17 . The wiring board of claim 16 , wherein the heat emitting layer is provided partially on the conductor pattern.
18 . The wiring board of claim 16 , wherein the heat emitting layer is also provided on the top surface of the insulating board.
19 . The wiring board of claim 18 , wherein the heat emitting layer contains 5.0 vol % to 40 vol % of N-type semiconductor particles.
20 . The wiring board of claim 13 , wherein the heat emitting layer also covers the top surface of the insulating resin.
21 . The wiring board of claim 13 , wherein the conductor pattern is embedded in the top surface of the insulating board such that the conductor pattern is exposed at the top surface of the insulating board.
22 . The wiring board of claim 13 , wherein the N-type semiconductor particles have an average particle diameter ranging from 0.1 μm to 20 μm.