IP Library Granted Patent US 9,048,196
Granted Patent B2
US 9,048,196 · App. 12/283,204 · Granted Jun 2, 2015

Power semiconductor package

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Quick Facts
Patent No.
US 9,048,196
App. No.
12/283,204
Granted
Jun 2, 2015
Kind
B2
Abstract

A power semiconductor package that includes a semiconductor die having at least two power electrodes and a conductive clip electrically and mechanically coupled to each power electrode.

Claims (17)

1. A semiconductor package comprising:

a semiconductor die that includes a bidirectional power device having at least a first power electrode and a second power electrode over a top surface of said semiconductor die, each power electrode including a plurality of spaced power fingers originating from each respective power electrode;

a first conductive clip over said top surface of said semiconductor die and electrically and mechanically coupled to said first power electrode, said first conductive clip including a first plurality of spaced fingers; and

a second conductive clip electrically and mechanically coupled to said second power electrode, said second conductive clip including a second plurality of spaced fingers arranged in an interdigited pattern with said first plurality of spaced fingers.

2. The semiconductor package of claim 1 , further comprising a passivation body encapsulating said semiconductor die.

3. The semiconductor package of claim 1 , wherein said semiconductor die is comprised of a III-nitride semiconductor.

4. The semiconductor package of claim 3 , wherein said III-nitride semiconductor is an alloy of InAlGaN.

5. The semiconductor package of claim 1 , wherein said power fingers are arranged in an interdigited pattern.

6. The semiconductor package of claim 1 , further comprising a control electrode, and a first conductive control clip electrically and mechanically coupled to said control electrode.

7. The semiconductor package of claim 6 , further comprising a current sense electrode, and a current sense clip electrically and mechanically coupled to said current sense electrode.

8. The semiconductor package of claim 1 , wherein said semiconductor die includes a first control electrode, and a first conductive control clip electrically and mechanically coupled to said first control electrode; and a second control electrode, and a second conductive control clip electrically and mechanically coupled to said second control electrode.

9. The semiconductor package of claim 8 , further comprising at least one current sense electrode, and a current sense clip electrically and mechanically connected to said current sense electrode.

10. The semiconductor package of claim 1 , wherein said first and said second conductive clips are electrically and mechanically connected to said first and said second power electrodes by a conductive adhesive.

11. The semiconductor package of claim 10 , wherein said conductive adhesive is either a solder or a conductive polymer.

12. The semiconductor package of claim 11 , wherein said conductive adhesive is comprised of a gold/tin solder.

13. The semiconductor package of claim 2 , wherein said passivation body is comprised of a polymer.

14. The semiconductor package of claim 13 , wherein said polymer comprises polysiloxane.

Assignments (1)
CHANGE OF NAME Recorded Jul 23, 2018
From: INTERNATIONAL RECTIFIER CORPORATION
To: INFINEON TECHNOLOGIES AMERICAS CORP.
Reel/Frame 046612/0968 →