Microactuator, head gimbal assembly, and magnetic disk drive
View Patent ↗Embodiments of the present invention help to suppress reduction of the operation quantity of a microactuator. According to one embodiment, a microactuator comprises a silicon substrate and a piezoelectric element. The silicon substrate has some rigidity and provides elastic counter force to the piezoelectric element. In the piezoelectric element, a secondary piezoelectric layer is laminated on a primary piezoelectric layer opposite from the silicon substrate. The contraction force of the secondary piezoelectric layer acts on the primary piezoelectric layer so that it bends toward the secondary piezoelectric layer opposite from the silicon substrate. When the primary piezoelectric layer expands, the contraction force of the secondary piezoelectric layer acts on the primary piezoelectric layer so that it warps against the primary piezoelectric layer.
1. A microactuator comprising:
a platform for fixing a head slider having magnetic recording and reproducing elements thereon;
a substrate for holding and rotating the platform;
a piezoelectric element held on the substrate and expanding or contracting in an in-plane direction of the substrate in response to an applied voltage to move the platform in the in-plane direction, located on the substrate and comprising a primary piezoelectric layer for generating an expansion force in the in-plane direction in response to the applied voltage and a secondary piezoelectric layer laminated on the primary piezoelectric layer opposite from the substrate surface for generating a contraction force in the in-plane direction in response to the applied voltage; and a first electrode and a second electrode laminated on the primary piezoelectric layer and the secondary piezoelectric layer, wherein
a voltage is applied to the primary piezoelectric layer and the secondary piezoelectric layer between the first electrode and the second electrode; and
the secondary piezoelectric layer has a polarization direction reversed from the polarization direction in the primary piezoelectric layer in response to the applied voltage, and the electric field for the applied voltage in the secondary piezoelectric layer is smaller than in the primary piezoelectric layer.
2. The microactuator according to claim 1 , wherein a threshold voltage for changing a polarization of the primary piezoelectric layer is smaller than a threshold voltage for changing a polarization of the secondary piezoelectric layer with respect to the applied voltage between the first electrode and the second electrode.
3. The microactuator according to claim 1 , wherein
the primary piezoelectric layer and the secondary piezoelectric-layer are made of the same material;
the primary piezoelectric layer consists of a plurality of piezoelectric layers;
each of the first electrode and the second electrode is a comb electrode; each of the secondary piezoelectric layer and the plurality of piezoelectric layers in the primary piezoelectric layer is sandwiched between each tooth of the first electrode and each tooth of the second electrode; and
a thickness of the secondary piezoelectric layer is greater than a thickness of one of the plurality of piezoelectric layers in the primary piezoelectric layer.
4. The microactuator according to claim 1 , wherein
the substrate is a silicon substrate;
beams having spring properties are formed on the silicon substrate; and
the beams are displaced in response to expansion or contraction of the piezoelectric element to move the platform.
5. A head gimbal assembly comprising:
a head slider having magnetic recording and reproducing elements;
a platform for fixing the head slider;
a substrate for holding and rotating the platform;
a piezoelectric element held on the substrate and expanding or contracting in an in-plane direction of the substrate to move the platform in the in-plane direction;
a suspension for bearing the substrate on its tip end; wherein
the piezoelectric element is located on the substrate and comprises a primary piezoelectric layer for generating an expansion force in the in-plane direction in response to the applied voltage and a secondary piezoelectric layer laminated on the primary piezoelectric layer opposite from the substrate surface for generating a contraction force in the in-plane direction in response to the applied voltage;
a first electrode and a second electrode laminated on the primary piezoelectric layer and the secondary piezoelectric layer; wherein
a voltage is applied to the primary piezoelectric layer and the secondary piezoelectric layer between the first electrode and the second electrode; and
the secondary piezoelectric layer has a polarization direction reversed from the polarization direction in the primary piezoelectric layer in response to the applied voltage, and the electric field for the applied voltage in the secondary piezoelectric layer is smaller than in the primary piezoelectric layer.
6. The head gimbal assembly according to claim 5 , wherein
a threshold voltage for changing a polarization of the primary piezoelectric layer is smaller than a threshold voltage for changing a polarization of the secondary piezoelectric layer with respect to the applied voltage between the first electrode and the second electrode.
7. The head gimbal assembly according to claim 5 , wherein
the primary piezoelectric layer and the secondary piezoelectric layer are made of the same material;
the primary piezoelectric layer consists of a plurality of piezoelectric layers;
each of the first electrode and the second electrodes is a comb electrode;
each of the secondary piezoelectric layer and the plurality of piezoelectric layers in the primary piezoelectric layer is sandwiched between each tooth of the first electrode and each tooth of the second electrode; and
a thickness of the secondary piezoelectric layer is greater than a thickness of one of the plurality of piezoelectric layers in the primary piezoelectric layer.
8. The head gimbal assembly according to claim 5 , wherein
the substrate is a silicon substrate;
beams having spring properties are formed on the silicon substrate; and
the beams are displaced in response to expansion or contraction of the piezoelectric element to move the platform.
9. A magnetic disk device comprising:
a disk; a head slider having elements for recording and reproducing information on the disk;
a platform for fixing the head slider;
a substrate for holding and rotating the platform;
a piezoelectric element held on the substrate and expanding or contracting in an in-plane direction of the substrate in response to an applied voltage to move the platform in the in-plane direction;
a moving mechanism bearing the substrate on its tip end for moving the substrate above the disk;
a controller for controlling the piezoelectric element and the moving mechanism to control a position of the head slider above the disk; wherein
the piezoelectric element is located on the substrate and comprises a primary piezoelectric layer for generating an expansion force in the in-plane direction in response to the applied voltage and a secondary piezoelectric layer laminated on the primary piezoelectric layer opposite from the substrate surface for generating a contraction force in the in-plane direction in response to the applied voltage;
a first electrode and a second electrode laminated on the primary piezoelectric layer and the secondary piezoelectric layer, wherein
a voltage is applied to the primary piezoelectric layer and the secondary piezoelectric layer between the first electrode and the second electrode; and
the secondary piezoelectric layer has a polarization direction reversed from the polarization direction in the primary piezoelectric layer in response to the applied voltage, and the electric field for the applied voltage in the secondary piezoelectric layer is smaller than in the primary piezoelectric layer.
10. The magnetic disk device according to claim 9 , wherein a threshold voltage for changing a polarization of the primary piezoelectric layer is smaller than a threshold voltage for changing a polarization of the secondary piezoelectric layer with respect to the applied voltage between the first electrode and the second electrode.
11. The magnetic disk device according to claim 9 , wherein
the primary piezoelectric layer and the secondary piezoelectric layer are made of the same material;
the primary piezoelectric layer consists of a plurality of piezoelectric layers;
each of the first electrode and the second electrode is a comb electrode;
each of the secondary piezoelectric layer and the plurality of piezoelectric layers in the primary piezoelectric layer is sandwiched between each tooth of the first electrode and each tooth of the second electrode; and
a thickness of the secondary piezoelectric layer is greater than a thickness of one of the plurality of piezoelectric layers in the primary piezoelectric layer.
12. The magnetic disk device according to claim 9 , wherein
the substrate is a silicon substrate;
beams having spring properties are formed on the silicon substrate;
the beams are displaced in response to expansion or contraction of the piezoelectric element to move the platform.