Flip chip interconnection with double post
A packaged microelectronic assembly includes a microelectronic element having a front surface and a plurality of first solid metal posts extending away from the front surface. Each of the first posts has a width in a direction of the front surface and a height extending from the front surface, wherein the height is at least half of the width. There is also a substrate having a top surface and a plurality of second solid metal posts extending from the top surface and joined to the first solid metal posts.
1. A packaged microelectronic element, comprising:
a microelectronic element having a front surface and a plurality of first solid metal posts extending away from the front surface, each first post having a width in a direction of the front surface and a height extending from the front surface, wherein the height is at least half of said width; and
a substrate having a top surface and a plurality of second solid metal posts extending from the top surface and joined to the first solid metal posts with a fusible metal, said second posts having top surfaces and edge surfaces extending abruptly away from said top surfaces of said second posts,
the substrate including terminals at a bottom surface opposite the top surface of said substrate, and conductive interconnects extending through the substrate and electrically connecting the terminals with the second solid metal posts,
wherein said plurality of first solid metal posts are etched metal posts and said plurality of second solid metal posts are etched metal posts having a frustoconical shape.
2. The packaged microelectronic element of claim 1 , wherein said plurality of said first solid metal posts and said plurality of said second solid metal posts consist essentially of copper.
3. The packaged microelectronic element of claim 1 , wherein a ratio of a diameter of said first posts to a pitch between said first posts is no more than 3:4.
4. The packaged microelectronic element of claim 1 , further comprising underbump metallizations underlying said first posts.
5. The packaged microelectronic element of claim 1 , wherein a diameter of said first posts is less than one-half of a pitch between each of said first posts.
6. The packaged microelectronic element of claim 1 , further comprising traces extending in a lateral direction of the substrate.
7. The packaged microelectronic element of claim 6 , wherein the traces extend along at least the top surface of said substrate, the bottom surface or between the top surface and the bottom surface of the substrate.
8. The packaged microelectronic element of claim 1 , wherein said terminals at the bottom surface are joined to contacts of a circuit panel.
9. The packaged microelectronic element of claim 1 , wherein the substrate includes a dielectric element consisting essentially of a dielectric material.
10. A packaged microelectronic element, comprising:
a microelectronic element having a front surface and a plurality of first solid metal posts extending away from the front surface, each post having a width in a direction of the front surface and a height extending from the front surface, wherein the height is at least half of said width; and
a substrate having a top surface and a plurality of second solid metal posts extending from the top surface and joined to the first solid metal posts, the substrate including terminals at a bottom surface opposite the top surface, and conductive interconnects extending through the substrate and electrically connecting the terminals with the second solid metal posts,
wherein the first and second posts are diffusion-bonded together, and
wherein said plurality of first posts are etched posts and said plurality of second posts are etched posts having a frustoconical shape.
11. The packaged microelectronic element of claim 10 , wherein a ratio of a diameter of said first posts to a pitch between said first posts is no more than 3:4.
12. The packaged microelectronic element of claim 10 , wherein a distance between said front surface of said microelectronic element and said top surface of said substrate is greater than 80 microns.
13. The packaged microelectronic element of claim 10 , wherein each of said first posts has a diameter that is equal to a diameter of each of said second metal posts.
14. The packaged microelectronic element of claim 10 , further comprising an underfill material between said front surface of said microelectronic element and said top surface of said substrate.
15. The packaged microelectronic element of claim 10 , wherein the substrate includes a dielectric element consisting essentially of a dielectric material.
16. A packaged microelectronic element, comprising:
a microelectronic element having a front surface and a plurality of first solid metal posts extending away from the front surface, each post having a width in a direction of the front surface and a height extending from the front surface, said posts consist essentially of metal other than solder, lead, or tin; and
a substrate having a top surface and a plurality of second solid metal posts extending from the top surface and joined to the first solid metal posts with a fusible metal, the substrate including terminals at a bottom surface opposite the top surface, and conductive interconnects extending through the substrate and electrically connecting the terminals with the second solid metal posts,
wherein a ratio of a diameter of said first solid metal posts to a pitch of said plurality of first solid metal posts is no more than 3:4, and
wherein said plurality of said first solid metal posts and said plurality of said second solid metal posts are etched posts having a frustoconical shape.
17. The packaged microelectronic element of claim 16 , wherein each of said first posts has a diameter that is equal to a diameter of said second metal posts.
18. The packaged microelectronic element of claim 16 , wherein said substrate is a multilayer substrate.
19. The packaged microelectronic element of claim 16 , wherein a diameter of said first posts is less than one-half of a pitch between each of said first posts.
20. The packaged microelectronic element of claim 16 , wherein the substrate includes a dielectric element consisting essentially of a dielectric material.
21. A packaged microelectronic element comprising:
a microelectronic element having a front surface and a plurality of first solid metal posts extending away from the front surface, each post having a width in a direction of the front surface and a height extending from the front surface; and
a substrate having a top surface and a plurality of second solid metal posts extending from the top surface and joined to the first solid metal posts, the substrate including terminals at a bottom surface opposite the top surface, and conductive interconnects extending through the substrate and electrically connecting the terminals with the second solid metal posts,
wherein a pitch of said first posts ranges between 50 and 200 microns and a distance between said bottom surface of said microelectronic element and said top surface of said substrate is greater than 80 microns, and
wherein said plurality of first solid metal posts are etched metal posts and said plurality of said second solid metal posts are etched metal posts having a frustoconical shape.
22. The packaged microelectronic element of claim 21 , wherein a fusible metal is used to join said second posts to said first posts.
23. The packaged microelectronic element of claim 21 , wherein each of said first posts has a diameter that is equal to a diameter of said second metal posts.
24. The packaged microelectronic element of claim 21 , wherein a diameter of said first posts is less than one-half of a pitch between each of said first posts.
25. The packaged microelectronic element of claim 16 , wherein the substrate includes a dielectric element consisting essentially of a dielectric material.
26. A packaged microelectronic element comprising:
a microelectronic element;
a substrate having a top surface, terminals at a bottom surface opposite said top surface, and conductive interconnects extending through said substrate; and
a plurality of pillars extending between said microelectronic element and said substrate, each of said plurality of pillars comprising a first metal post portion attached to said microelectronic element, a second metal post portion attached to said substrate, and a metal fusion portion, wherein said first and second metal portions are joined together by said metal fusion portion, said plurality of pillars having a length not less than 50 microns, and a height of said first metal post portions is at least half of a width of each first metal post portion, and a height of said second metal post portions is at least half of a width of each respective second metal post portion,
wherein said conductive interconnects electrically connect the terminals with said second solid metal post portions, and
wherein at least one of said plurality of first metal post portions or said plurality of second metal post portions are etched metal post portions and have a frustoconical shape.
27. The packaged microelectronic element of claim 26 , wherein a distance between said front surface of said microelectronic element and said top surface of said substrate is greater than 80 microns.
28. The packaged microelectronic element of claim 26 , wherein said substrate is a multilayer substrate.
29. The packaged microelectronic element of claim 26 , wherein each of said first metal post portions has a diameter that is equal to a diameter of said second metal post portions.
30. The packaged microelectronic element of claim 26 , wherein a diameter of said first metal post portions is less than one-half of a pitch between each of said first metal post portions.
31. The packaged microelectronic element of claim 26 , wherein each of said pluralities of first and second metal post portions are etched.
32. The packaged microelectronic element of claim 26 , wherein the substrate includes a dielectric element consisting essentially of a dielectric material.