Ridge and mesa optical waveguides

1. A method comprising:

forming an optically conductive layer on a top surface of a substrate;

selectively dry etching the optically conductive layer to form first and second distal lateral wall portions of first and second lateral walls of the optically conductive layer;

forming first and second sidewall layers located on the distal lateral wall portions; and

selectively wet etching the optically conductive layer to expose a portion of the top surface and to form an optically conductive waveguide peak being elongated in a first direction along the top surface of the substrate, the optically conductive waveguide peak being configured for propagating light generally in the first direction and including first and second proximal lateral wall portions of the first and second lateral walls of the optically conductive layer that intersect the top surface;

wherein the sidewall layers do not intersect the top surface, and span a first height in a second direction generally away from the top surface that is less than a second height spanned by the optically conductive peak measured in the second direction.

2. The method of claim 1 , wherein the step of forming the optically conductive layer includes forming another optically conductive layer as being the substrate, and wherein the step of forming the optically conductive waveguide peak includes configuring the optically conductive waveguide peak for propagating light generally in the first direction along the top surface.

3. The method of claim 1 , wherein the step of forming the optically conductive waveguide peak includes configuring the peak for propagating light through the peak generally in the first direction.

4. The method of claim 1 , wherein the steps of forming the distal and proximal lateral wall portions include forming surfaces, and wherein the step of dry etching includes forming the distal lateral wall portions as having surfaces that are smoother than are the surfaces of the proximal lateral wall portions.

5. The method of claim 1 , wherein the step of wet etching follows the step of forming the sidewall layers, and wherein the step of wet etching includes forming the exposed portion of the top surface as being substantially planar.

6. The method of claim 1 , wherein the step of forming the proximal lateral wall portions and the step of forming the substrate top surface of the substrate include forming the proximal lateral wall portions and the substrate as having refractive indices that are substantially equal.

7. The method of claim 1 , wherein the step of forming the optically conductive layer and the step of forming the substrate include providing a first semiconductor composition of the substrate that is different from a second semiconductor composition of the optically conductive layer.

8. The method of claim 7 , wherein the step of forming sidewall layers includes providing a third semiconductor composition of the first and second sidewall layers that is substantially less susceptible to dissolution by a wet etchant utilized for the wet etching than is the second semiconductor composition of the optically conductive layer.

9. A method, comprising:

forming an optical waveguide cladding region and an optical waveguide core region, the optical waveguide core region including an optical core layer on another optical core layer;

selectively dry etching the optical core layer to form first and second distal lateral wall portions of first and second lateral walls of the optical core layer;

forming first and second sidewall layers on the distal lateral wall portions of the lateral walls; and

selectively wet etching the optical core layer to expose a portion of a top surface of the another optical core layer and to form an optically conductive waveguide peak being elongated in a first direction along the top surface of the another optical core layer, the optically conductive waveguide peak being configured for propagating light generally in the first direction and including first and second proximal lateral wall portions of the first and second lateral walls of the optical core layer intersecting the top surface of the another optical core layer;

wherein the sidewall layers do not intersect the top surface of the another optical core layer, and span a first height in a second direction generally away from the top surface that is less than a second height spanned by the optically conductive peak measured in the second direction.

10. The method of claim 9 , wherein the step of forming the optical waveguide core region includes configuring the optically conductive waveguide peak for propagating light generally in the first direction along the top surface of the another optical core layer.

11. The method of claim 9 , wherein the step of forming the optically conductive waveguide peak includes configuring the peak for propagating light through the peak, generally in the first direction.

12. The method of claim 9 , wherein the steps of forming the distal and proximal lateral wall portions include forming surfaces, and wherein the step of dry etching includes forming the distal lateral wall portions as having surfaces that are smoother than are the surfaces of the proximal lateral wall portions.

13. The method of claim 9 , wherein the step of wet etching follows the step of forming the sidewall layers, and wherein the step of wet etching includes forming the exposed portion of the top surface of the another optical core layer as being substantially planar.

14. The method of claim 9 , wherein the step of forming the optical waveguide core region includes forming the optical core layer and the another optical core layer as having refractive indices that are substantially equal.

15. The method of claim 9 , wherein the step of forming the optical waveguide core region includes providing a first semiconductor composition of the another optical core layer that is different from a second semiconductor composition of the optical core layer.

16. The method of claim 15 , wherein the step of forming the sidewall layers includes providing a third semiconductor composition of the sidewall layers that is substantially less susceptible to dissolution by a wet etchant utilized for the step of wet etching than is the second semiconductor composition.

17. A method, comprising:

forming an optical waveguide cladding layer on an optical waveguide core layer on another optical waveguide cladding layer on a substrate;

selectively dry etching the optical waveguide core layer and the optical waveguide cladding layers to form first and second distal lateral wall portions of first and second lateral walls of the optical waveguide core and cladding layers;

forming first and second sidewall layers on the distal lateral wall portions of the lateral walls; and

selectively wet etching the another optical waveguide cladding layer to expose a portion of a top surface of the substrate and to form an optically conductive waveguide mesa being elongated in a first direction along the top surface of the substrate, the optically conductive waveguide mesa being configured for propagating light generally in the first direction and including first and second proximal lateral wall portions of the first and second lateral walls intersecting the top surface of the substrate;

wherein the sidewall layers do not intersect the top surface of the substrate, and span a first height in a second direction generally away from the top surface that is less than a second height spanned by the optically conductive peak measured in the second direction.

18. The method of claim 17 , wherein the steps of forming the distal and proximal lateral wall portions include forming surfaces, and wherein the step of dry etching includes forming the distal lateral wall portions as having surfaces that are smoother than are the surfaces of the proximal lateral wall portions.

19. The method of claim 17 , wherein the step of wet etching follows the step of forming the sidewall layers, and wherein the step of wet etching includes forming the exposed portion of the top surface of the substrate as being substantially planar.

20. The method of claim 17 , wherein the step of forming the sidewall layers includes providing a third semiconductor composition of the sidewall layers that is substantially less susceptible to dissolution by a wet etchant utilized for the wet etching than is a second semiconductor composition of the substrate.