Silicon-based optical modulator for analog applications

1. An analog optical modulator formed within an SOI structure including a silicon substrate, an overlying oxide layer and a relatively thin silicon surface waveguiding layer, the analog optical modulator comprising

an optical interferometer formed within the relatively thin silicon surface waveguiding layer, the interferometer including an input optical waveguide, a pair of parallel waveguiding arms and an output optical waveguide, with an input Y-splitter disposed between the input optical waveguide and an input to the pair of parallel waveguiding arms and an output Y-combiner disposed between an output of the pair of parallel waveguiding arms and the output optical waveguide, a continuous wave (CW) optical input signal coupled into the input optical waveguide; and

at least one silicon-insulator-silicon capacitance (SISCAP) optical waveguiding device disposed in at least one of said pair of parallel waveguiding arms, the SISCAP optical waveguiding device comprising

a first silicon region within the relatively thin silicon surface waveguiding layer doped to exhibit a first conductivity type;

a second silicon region disposed to overlap, in part, the first silicon region, the second silicon region doped to exhibit a second, opposite conductivity type;

a relatively thin dielectric layer disposed in an overlap area between said first and second doped silicon regions, a combination of said first and second doped silicon regions with the interposed relatively thin dielectric layer defining an active region of an electro-optic device;

a voltage bias applied across the at least one SISCAP optical waveguiding device to create a predetermined, constant capacitance value across the at least one SISCAP optical waveguiding device, thereby forming a linear operating region for the analog optical modulator; and

an input RF electrical signal coupled to the second silicon region of the at least one SISCAP device, wherein the application of said input RF electrical signal, in combination with the voltage bias, modifies a phase of an optical signal passing therethrough to create a modulated analog optical output signal along the optical output waveguide, the modulated analog optical output signal replicating the input RF electrical signal.

2. The modulator as defined in claim 1 wherein the at least one SISCAP optical waveguiding device comprises a pair of SISCAP optical waveguiding devices, with a first device of said pair disposed along a first optical waveguiding arm of the pair of parallel waveguiding arms of the optical interferometer and a second device of said pair disposed along the other optical waveguiding arm of the pair of parallel waveguiding arms of the optical interferometer.

3. The modulator as defined in claim 2 wherein the pair of SISCAP optical waveguiding devices are cross-coupled into a common mode configuration, the input RF signal applied to a cross-coupled connection of the second silicon region of one SISCAP device with the first silicon region of the other SISCAP device.

4. The modulator as defined in claim 3 wherein the voltage bias is maintained at an essentially zero voltage level.

5. The modulator as defined in claim 4 wherein the modulator further comprises a low pass electrical filter coupled across the first SISCAP optical waveguiding device to substantiate operation with a zero bias voltage.

6. The modulator as defined in claim 5 wherein the low pass electrical filter is integrated within the same SOI structure as the modulator.

7. The modulator as defined in claim 3 wherein the voltage bias is provided by a constant DC voltage source coupled to the remaining first and second silicon regions of the SISCAP devices to maintain an essentially constant DC bias voltage.

8. An integrated optical communication system formed within an SOI structure comprising a silicon substrate, an overlying insulating layer and a relatively thin surface silicon waveguiding layer, the integrated optical communication system comprising

an analog optical modulator including

an optical interferometer formed within the relatively thin silicon surface waveguiding layer, the interferometer including an input optical waveguide, a pair of parallel waveguiding arms and an output optical waveguide, with an input Y-splitter disposed between the input optical waveguide and an input to the pair of parallel waveguiding arms and an output Y-combiner disposed between an output of the pair of parallel waveguiding arms and the output optical waveguide, a continuous wave (CW) optical input signal coupled into the input optical waveguide; and

at least one silicon-insulator-silicon capacitance (SISCAP) optical waveguiding device disposed in at least one of said pair of parallel waveguiding arms, the SISCAP optical waveguiding device comprising

a first silicon region within the relatively thin silicon surface waveguiding layer doped to exhibit a first conductivity type;

a second silicon region disposed to overlap, in part, the first silicon region, the second silicon region doped to exhibit a second, opposite conductivity type;

a relatively thin dielectric layer disposed in an overlap area between said first and second doped silicon regions, a combination of said first and second doped silicon regions with the interposed relatively thin dielectric layer defining an active region of an electro-optic device;

a voltage bias applied across the at least one SISCAP optical waveguiding device to create a predetermined, constant capacitance value across the at least one SISCAP optical waveguiding device, thereby forming a linear operating region for the analog optical modulator; and

an input RF electrical signal coupled to the second silicon region of the at least one SISCAP device, wherein the application of said input RF electrical signal, in combination with the voltage bias, modifies a phase of an optical signal passing therethrough to create a modulated analog optical output signal along the optical output waveguide, the modulated analog optical output signal replicating the input RF electrical signal; and

at least one optical component integrated within the SOI structure with the analog modulator; and

at least one electrical component integrated within the SOI structure with the analog modulator.

9. The system as defined in claim 8 wherein the at least one optical component comprises a photodetecting device.

10. The system as defined in claim 9 wherein the at least one optical component further comprises an out-coupling waveguide disposed between a selected portion of the interferometer and the photodetecting device such that the photodetecting device provides an electrical signal representative of a performance of said interferometer.

11. The system as defined in claim 8 wherein the at least one electrical component comprises a transimpedance amplifier coupled to an input of the analog optical modulator.

12. A silicon-based arrangement integrated within a single SOI structure, comprising a silicon substrate, an overlying insulating layer and a relatively thin surface silicon layer, the arrangement comprising

a plurality of N analog optical modulators interconnected in a predetermined array configuration, each analog modulator comprising:

an optical interferometer formed within the relatively thin silicon surface waveguiding layer, the interferometer including an input optical waveguide, a pair of parallel waveguiding arms and an output optical waveguide, with an input Y-splitter disposed between the input optical waveguide and an input to the pair of parallel waveguiding arms and an output Y-combiner disposed between an output of the pair of parallel waveguiding arms and the output optical waveguide, a continuous wave (CW) optical input signal coupled into the input optical waveguide; and

at least one silicon-insulator-silicon capacitance (SISCAP) optical waveguiding device disposed in at least one of said pair of parallel waveguiding arms, the SISCAP optical waveguiding device comprising

a first silicon region within the relatively thin silicon surface waveguiding layer doped to exhibit a first conductivity type;

a second silicon region disposed to overlap, in part, the first silicon region, the second silicon region doped to exhibit a second, opposite conductivity type;

a relatively thin dielectric layer disposed in an overlap area between said first and second doped silicon regions, a combination of said first and second doped silicon regions with the interposed relatively thin dielectric layer defining an active region of an electro-optic device;

a voltage bias applied across the at least one SISCAP optical waveguiding device to create a predetermined, constant capacitance value across the at least one SISCAP optical waveguiding device, thereby forming a linear operating region for the analog optical modulator; and

an input RF electrical signal coupled to the second silicon region of the at least one SISCAP device, wherein the application of said input RF electrical signal, in combination with the voltage bias, modifies a phase of an optical signal passing therethrough to create a modulated analog optical output signal along the optical output waveguide, the modulated analog optical output signal replicating the input RF electrical signal; and

a plurality of optical waveguides, formed within the relatively thin silicon surface layer and arranged to form connections among the plurality of N analog optical modulators.

13. The arrangement as defined in claim 12 wherein a select group of optical waveguides within the plurality of optical waveguides are disposed to create optical signal splitters between at least two modulators of the plurality of N analog optical modulators.

14. The arrangement as defined in claim 12 wherein a select group of optical waveguides within the plurality of optical waveguides are disposed to create optical signal combiners between at least two modulators of the plurality of N analog optical modulators.