Multilayer active mask lithography

1. A lithographic mask, comprising:

a first energy emitting layer, including:

a first active region configured to emit a first energy flux at a first selected intensity in response to an energy input; and

a second energy emitting layer, including:

a second active region configured to emit a second energy flux at a second selected intensity in response to the first energy flux; and

a first inactive region configured not to emit an energy flux at the second selected intensity in response to the first energy flux.

2. The mask of claim 1 , wherein the first energy flux is electromagnetic radiation.

3. The mask of claim 2 , wherein the first energy flux has a first selected frequency, and the second energy flux is electromagnetic radiation having a second selected frequency.

4. The mask of claim 1 , wherein the first energy flux is charged particles.

5. The mask of claim 1 , wherein the second energy flux is charged particles.

6. The mask of claim 1 , wherein the first energy flux is an evanescent wave.

7. The mask of claim 1 , wherein the first energy flux is an electromagnetic field.

8. The mask of claim 1 , wherein the second energy flux is an electromagnetic field.

9. The mask of claim 1 , wherein the first energy emitting layer is photoemissive.

10. The mask of claim 1 , wherein the second energy emitting layer is photoemissive.

11. The mask of claim 1 , wherein the first energy emitting layer is luminescent.

12. The mask of claim 1 , wherein the second energy emitting layer is luminescent.

13. The mask of claim 1 , wherein the first energy emitting layer includes an active gain material.

14. The mask of claim 1 , wherein the second energy emitting layer includes an active gain material.

15. The mask of claim 14 , wherein the second energy emitting layer is configured to function as an optical cavity.

16. The mask of claim 1 , wherein the second energy emitting layer includes a nonlinear optical material.

17. The mask of claim 1 , wherein the first energy emitting layer includes a quantum dot.

18. The mask of claim 1 , wherein the second energy emitting layer includes a quantum dot.

19. The mask of claim 1 , wherein the first energy emitting layer includes a fluorescent material.

20. The mask of claim 1 , wherein the second energy emitting layer includes a fluorescent material.

21. The mask of claim 1 , wherein the second energy emitting layer includes a scintillation material.

22. The mask of claim 1 , wherein the second energy emitting layer includes a photocathode.

23. The mask of claim 1 , wherein the second energy emitting layer includes a field emission material.

24. The mask of claim 1 , wherein the first energy emitting layer includes a waveguide.

25. The mask of claim 1 , wherein the second energy emitting layer includes a waveguide.

26. The mask of claim 1 , wherein the first energy emitting layer includes a region supporting plasmon propagation.

27. The mask of claim 1 , wherein the second energy emitting layer includes a region supporting plasmon propagation.

28. The mask of claim 1 , wherein the energy input is an electrical input.

29. The mask of claim 1 , wherein the energy input is an optical input.

30. The mask of claim 1 , wherein the first energy emitting layer includes a second inactive region configured not to emit an energy flux at the first selected intensity in response to the energy input.

31. A lithographic apparatus, comprising:

a patterned energy emitting mask, the mask including at least one active region that emits an energy flux and at least one inactive region that does not emit an energy flux; and

a substrate support arranged to hold a substrate in a position to receive the energy flux,

wherein the patterned energy emitting mask includes at least two layers, at least one of the at least two layers being an energy emitting layer.

32. The apparatus of claim 31 , wherein the at least two layers include two energy emitting layers.

33. The apparatus of claim 32 , wherein the at least two layers include a patterned energy emitting layer and a homogeneous energy emitting layer.

34. The apparatus of claim 32 , wherein the at least two layers include two patterned energy emitting layers.

35. The apparatus of claim 31 , wherein the at least two layers include an energy emitting layer and a patterned transmissivity layer.

36. A lithographic method, comprising:

generating an energy flux by activating a patterned energy emitting mask, wherein the mask includes at least one active region that emits an energy flux and at least one inactive region that does not emit an energy flux and wherein the mask includes at least two layers, at least one of the at least two layers being an energy emitting layer; and

exposing a flux sensitive material to the generated energy flux at a level selected to modify the flux sensitive material.

37. The lithographic method of claim 36 , wherein the at least two layers include two energy emitting layers.

38. The lithographic method of claim 37 , wherein the at least two layers include a patterned energy emitting layer and a homogeneous energy emitting layer.

39. The lithographic method of claim 38 , wherein the at least two layers include two patterned energy emitting layers.

40. The lithographic method of claim 36 , wherein the at least two layers include an energy emitting layer and a patterned transmissivity layer.

41. A lithographic mask, comprising:

a patterned energy emitting layer, the layer including:

at least one active region configured to emit an energy flux at a selected level in response to an energy input; and

at least one inactive region configured not to emit an energy flux at the selected level in response to the energy input,

wherein the active region includes a structure selected from the group consisting of an active gain material, a nonlinear optical material, a waveguide, a quantum dot, and a plasmon-supporting region.

42. A lithographic mask, comprising:

a patterned energy emitting layer, the layer including:

a first active region configured to emit a first energy flux at a first selected level in response to an energy input; and

a second active region configured to emit a second energy flux at a second selected level in response to the energy input,

wherein the first and second energy fluxes differ in frequency or intensity.

43. The lithographic mask of claim 42 , wherein the first and second energy fluxes differ in frequency.

44. The lithographic mask of claim 42 , wherein the first and second energy fluxes differ in intensity.

45. The mask of claim 3 , wherein the first selected frequency differs from the second selected frequency.

46. The mask of claim 4 , wherein the charged particles are electrons.

47. The mask of claim 5 , wherein the charged particles are electrons.

48. The mask of claim 7 , wherein the electromagnetic field is static.

49. The mask of claim 7 , wherein the electromagnetic field is dynamic.

50. The mask of claim 7 , wherein the electromagnetic field is purely electric.

51. The mask of claim 7 , wherein the electromagnetic field is purely magnetic.

52. The mask of claim 8 , wherein the electromagnetic field is static.

53. The mask of claim 8 , wherein the electromagnetic field is dynamic.

54. The mask of claim 8 , wherein the electromagnetic field is purely electric.

55. The mask of claim 8 , wherein the electromagnetic field is purely magnetic.

56. The mask of claim 1 , wherein the first energy emitting layer includes an electrode.

57. The mask of claim 1 , wherein the second energy emitting layer includes an electrode.

58. The apparatus of claim 31 , further comprising a beam-directing element that directs the energy flux toward the substrate.

59. The apparatus of claim 31 , wherein the energy flux is electromagnetic radiation.

60. The apparatus of claim 31 , wherein the energy flux is electrons.

61. The apparatus of claim 31 , wherein the energy flux is an evanescent wave.

62. The apparatus of claim 31 , wherein the energy flux is an electromagnetic field.

63. The apparatus of claim 62 , wherein the electromagnetic field is static.

64. The apparatus of claim 62 , wherein the electromagnetic field is dynamic.

65. The apparatus of claim 62 , wherein the electromagnetic field is purely electric.

66. The apparatus of claim 62 , wherein the electromagnetic field is purely magnetic.

67. The apparatus of claim 31 , wherein the patterned energy emitting mask includes a light emitting diode.

68. The apparatus of claim 31 , wherein the patterned energy emitting mask includes a fluorescent material.

69. The apparatus of claim 31 , wherein the patterned energy emitting mask includes a luminescent material.

70. The apparatus of claim 31 , wherein the patterned energy emitting mask includes a photoemissive material.

71. The apparatus of claim 31 , wherein the patterned energy emitting mask includes a nonlinear optical material.

72. The apparatus of claim 31 , wherein the patterned energy emitting mask includes an active gain optical material.

73. The apparatus of claim 31 , wherein the patterned energy emitting mask includes a quantum dot.

74. The apparatus of claim 31 , wherein the patterned energy emitting mask includes an electrode.

75. The apparatus of claim 31 , wherein the patterned energy emitting mask includes an input configured to trigger emission of the energy flux.

76. The apparatus of claim 75 , wherein the input is configured to trigger emission in response to an optical signal.

77. The apparatus of claim 75 , wherein the input is configured to trigger emission in response to an electrical signal.

78. The apparatus of claim 31 , wherein the substrate support is configured for relative movement between the substrate and the mask.

79. The lithographic method of claim 36 , wherein the generated energy flux is electromagnetic radiation.

80. The lithographic method of claim 36 , wherein the generated energy flux is electrons.

81. The lithographic method of claim 36 , wherein the generated energy flux is an evanescent wave.

82. The lithographic method of claim 36 , wherein generating an energy flux by activating a patterned energy emitting mask includes generating an electromagnetic field.

83. The lithographic method of claim 82 , wherein the generating an electromagnetic field includes generating a static electromagnetic field.

84. The lithographic method of claim 82 , wherein generating an electromagnetic field includes generating a dynamic electromagnetic field.

85. The lithographic method of claim 82 , wherein generating an electromagnetic field includes generating substantially only an electric field.

86. The lithographic method of claim 82 , wherein generating an electromagnetic field includes generating substantially only a magnetic field.

87. The lithographic method of claim 36 , wherein activating a patterned energy emitting mask includes activating one or more light-emitting diodes.

88. The lithographic method of claim 36 , wherein the patterned energy emitting mask includes a luminescent material.

89. The lithographic method of claim 88 , wherein activating the patterned energy emitting mask includes inducing fluorescence in the luminescent material.

90. The lithographic method of claim 89 , wherein inducing fluorescence in the luminescent material includes exposing the luminescent material to electromagnetic radiation.

91. The lithographic method of claim 88 , wherein activating the patterned energy emitting mask includes applying an electric field to the luminescent material, thereby inducing it to luminesce.

92. The lithographic method of claim 36 , wherein the patterned energy emitting mask includes an electrode.

93. The lithographic method of claim 92 , wherein activating the patterned energy emitting mask includes applying a voltage to the electrode.

94. The lithographic method of claim 93 , wherein the electrode is in contact with the substrate during application of the voltage.

95. The lithographic method of claim 36 , wherein the patterned energy emitting mask includes a field emissive material.

96. The lithographic method of claim 95 , wherein activating the patterned energy emitting mask includes applying a voltage to the field emissive material.

97. The lithographic method of claim 96 , wherein the field emissive material is in contact with the substrate during application of the voltage.

98. The lithographic method of claim 36 , wherein the flux sensitive material includes a lipid bilayer, and wherein exposing the flux sensitive material to the generated energy flux includes forming pores in the lipid bilayer.

99. The lithographic method of claim 98 , further including applying an etchant to the lipid bilayer after forming the pores.

100. The lithographic method of claim 36 , wherein the flux sensitive material includes a resist coating, and wherein exposing the flux sensitive material to the generated energy flux includes inducing a chemical change in the resist coating.

101. The lithographic method of claim 36 , wherein the exposed flux sensitive material is modified in a pattern corresponding to the pattern of the patterned energy emitting mask.

102. The lithographic mask of claim 101 , wherein the active region includes an active gain material.

103. The lithographic mask of claim 101 , wherein the active region includes a nonlinear optical material.

104. The lithographic mask of claim 101 , wherein the active region includes a waveguide.

105. The lithographic mask of claim 101 , wherein the active region includes a quantum dot.

106. The lithographic mask of claim 101 , wherein the active region includes a plasmon-supporting region.