Neighbor block refresh for non-volatile memory

1 . A method of operating a non-volatile memory array comprising:

providing two or more erase sectors in a given physical sector of the array, each erase sector comprising a plurality of memory cells, one of which erase sectors is a target block, and another at least one of the two or more erase sectors are neighbor blocks;

erasing the target block;

determining whether to refresh the contents of at least one of the neighbor blocks; and

refreshing the contents of the at least one of the neighbor blocks.

2 . The method of claim 1 , wherein the non-volatile memory comprises floating gate devices.

3 . The method of claim 1 , wherein the non-volatile memory comprises charge-trapping devices.

4 . The method of claim 3 , wherein the charge-trapping devices comprise nitride read only memory.

5 . The method of claim 1 , wherein at least one of the neighbor blocks shares a wordline with the target block.

6 . The method of claim 1 , wherein refreshing the contents of at the least one of the neighbor blocks comprises:

injecting electrons into storage areas of selected ones of the memory cells in the at least one of the two or more erase sectors that are neighbor blocks, thereby increasing the threshold voltages of the selected ones of the memory cells in the at least one of the two or more erase sectors that are neighbor blocks.

7 . The method of claim 1 , wherein determining whether to refresh the contents of at least one of the neighbor blocks comprises:

selecting a sub-population of a total number of cells in a given program state; and

checking a threshold voltage for the sub-population of cells in the given program state.

8 . The method of claim 7 , wherein:

the sub-population represents a small percentage of the total number of cells in the given program state.

9 . The method of claim 8 , wherein the small percentage is approximately 1%.

10 . The method of claim 1 , further comprising:

establishing at least two adjacent program states, one of which may be an erase state; and

programming a higher of the two adjacent program states so that a threshold voltage of selected ones of the memory cells are above a program verify value for the higher of the two adjacent program states;

wherein determining whether to refresh the contents of at least one of the neighbor blocks comprises:

checking the threshold voltages for a portion of memory cells in the higher of the two adjacent program states; and

observing whether the threshold voltages for the portion of the memory cells in the higher of the two adjacent program states has shifted below the program verify value.

11 . The method of claim 10 , wherein the portion of memory cells which is checked comprises a statistically valid sub-population of the total memory cells at the higher of the two adjacent program states.

12 . The method of claim 11 , wherein the statistically valid sub-population less than 5%, of the total memory cells.

13 . The method of claim 1 , further comprising:

establishing at least two adjacent program states, one of which may be an erase state; and

programming a higher of the two adjacent program states so that there is a gap between a distribution of threshold voltages for memory cells in the higher of the two adjacent program states;

wherein determining whether to refresh the contents of at least one of the neighbor blocks comprises:

checking the threshold voltages for a portion memory cells in the higher of the two adjacent program states; and

observing whether the gap has been narrowed to a threshold.

14 . The method of claim 1 , further comprising:

establishing at least two adjacent program states, one of which may be an erase state; and

programming a higher of the two adjacent program states so that a threshold voltage of selected ones of the memory cells are above a read value for the higher of the two adjacent program states;

wherein determining whether to refresh the contents of at least one of the neighbor blocks comprises:

checking the threshold voltages for a portion of memory cells in the higher of the two adjacent program states; and

observing whether the threshold voltages for the portion of the memory cells in the higher of the two adjacent program states has shifted close to the read value.

15 . The method of claim 1 , further comprising:

refreshing the contents of the at least one of the neighbor blocks after every nth erase operation on the target block.

16 . The method of claim 1 , wherein there are many neighbor blocks, and further comprising:

refreshing the contents of a first portion of the at least one of the neighbor blocks after a given erase operation on the target block; and

refreshing the contents of a second portion of the at least one of the neighbor blocks after a subsequent erase operation on the target block.

17 . The method of claim 1 , wherein there are multiple possible distributions of threshold levels, further comprising:

when checking for disturb, check different distributions each time, rather than always checking for disturb at given distribution of threshold levels.

18 . A method of operating a non-volatile memory array comprising:

using a sub-population of cells in order to identify a necessity for a refresh operation on a larger population of cells.

19 . A non-volatile memory array comprising:

two or more erase sectors in a given physical sector of the array, each erase sector comprising a plurality of memory cells, one of which erase sectors is a target block, and another at least one of the erase sectors are neighbor blocks; and

at least one of the neighbor blocks shares a wordline with the target block.

20 . The non-volatile memory array of claim 19 , wherein the target block and the neighbor blocks are in a same physical sector of the memory array.