Solid-state imaging apparatus and method for producing the same
View Patent ↗A solid-state imaging apparatus includes a plurality of photosensitive cells, and a driving unit provided for driving the plurality of photosensitive cells. Each photosensitive cell includes a photodiode formed to be exposed on a surface of a semiconductor substrate for the purpose of accumulating signal charge obtained by subjecting incident light to photoelectric conversion, a transfer transistor for transferring signal charge accumulated by the photodiode, a floating diffusion layer for temporarily accumulating signal charge transferred by the transfer transistor, and an amplifier transistor for amplifying signal charge temporarily accumulated in the floating diffusion layer. A source/drain diffusion layer provided in the amplifier transistor is covered with a salicide layer, and the floating diffusion layer is formed to be exposed on a surface of the semiconductor substrate.
1. A solid-state imaging apparatus, comprising:
a plurality of photosensitive cells disposed in a matrix in a photosensitive region on a semiconductor substrate; and
a driving unit for driving the plurality of photosensitive cells,
wherein an impurity concentration of a source/drain diffusion layer of a transistor in the photosensitive cells is lower than an impurity concentration of the source/drain diffusion layer of a transistor in the driving unit.
2. The solid-state imaging apparatus according to claim 1 ,
wherein each of the photosensitive cells includes:
a photodiode formed to be exposed on a surface of the semiconductor substrate, for accumulating signal charge obtained by subjecting incident light to photoelectric exchange;
a transfer transistor formed on the semiconductor substrate, for transferring the signal charge accumulated in the photodiode;
a floating diffusion layer formed on the semiconductor substrate, for temporarily accumulating the signal charge transferred by the transfer transistor, the floating diffusion layer including a contact portion that is connected to a gate electrode of an amplifier transistor; and
the amplifier transistor being formed on the semiconductor substrate, for amplifying the signal charge temporarily accumulated in the floating diffusion layer,
wherein an impurity concentration of the floating diffusion layer is lower than an impurity concentration of the source/drain diffusion layer of a transistor in the driving unit.
3. The solid-state imaging apparatus according to claim 2 , wherein the impurity concentration of the floating diffusion layer is 1×10 18 cm −3 or less.
4. The solid-state imaging apparatus according to claim 1 ,
wherein each of the photosensitive cells includes:
a photodiode formed to be exposed on a surface of the semiconductor substrate, for accumulating signal charge obtained by subjecting incident light to photoelectric exchange;
a transfer transistor formed on the semiconductor substrate, for transferring the signal charge accumulated in the photodiode;
a floating diffusion layer formed on the semiconductor substrate, for temporarily accumulating the signal charge transferred by the transfer transistor, the floating diffusion layer including a contact portion that is connected to a gate electrode of an amplifier transistor; and
the amplifier transistor being formed on the semiconductor substrate, for amplifying the signal charge temporarily accumulated in the floating diffusion layer,
wherein an impurity concentration of the source/drain diffusion layer of the amplifier transistor is lower than an impurity concentration of the source/drain diffusion layer of a transistor in the driving unit.
5. The solid-state imaging apparatus according to claim 1 ,
wherein each of the photosensitive cells includes:
a photodiode formed to be exposed on a surface of the semiconductor substrate, for accumulating signal charge obtained by subjecting, incident light to photoelectric exchange;
a transfer transistor formed on the semiconductor substrate, for transferring the signal charge accumulated in the photodiode;
a floating diffusion layer formed on the semiconductor substrate, for temporarily accumulating the signal charge transferred by the transfer transistor, the floating diffusion layer including a contact portion that is connected to a gate electrode of an amplifier transistor;
the amplifier transistor being formed on the semiconductor substrate, for amplifying the signal charge temporarily accumulated in the floating diffusion layer; and
a reset transistor for resetting the floating diffusion layer,
wherein an impurity concentration of the source/drain diffusion layer of the reset transistor is lower than an impurity concentration of the source/drain diffusion layer of a transistor in the driving unit.
6. The solid-state imaging apparatus according to claim 2 ,
wherein the driving unit includes:
a vertical driver circuit for simultaneously driving the transfer transistor and the reset transistor in a vertical direction;
a noise suppressing circuit for obtaining a signal output to a plurality of vertical signal lines disposed in a vertical direction in the photosensitive region; and
a horizontal driver circuit for outputting a signal from the noise suppressing circuit in a time series by successively switching a plurality of horizontal transistors disposed in a horizontal direction, and
an impurity concentration of the floating diffusion layer is lower than an impurity concentration of a source/drain diffusion layer of a transistor in the vertical driver circuit.
7. The solid-state imaging apparatus according to claim 2 ,
wherein the driving unit includes:
a vertical driver circuit for simultaneously driving the transfer transistor and the reset transistor in a vertical direction;
a noise suppressing circuit for obtaining a signal output to a plurality of vertical signal lines disposed in a vertical direction in the photosensitive region; and
a horizontal driver circuit for outputting a signal from the noise suppressing circuit in a time series by successively switching a plurality of horizontal transistors disposed in a horizontal direction, and
an impurity concentration of the floating diffusion layer is lower than an impurity concentration of a source/drain diffusion layer of a transistor in the horizontal driver circuit.
8. The solid-state imaging apparatus according to claim 2 ,
wherein the driving unit includes:
a vertical driver circuit for simultaneously driving the transfer transistor and the reset transistor in a vertical direction;
a noise suppressing circuit for obtaining a signal output to a plurality of vertical signal lines disposed in a vertical direction in the photosensitive region; and
a horizontal driver circuit for outputting a signal from the noise suppressing circuit in a time series by successively switching a plurality of horizontal transistors disposed in a horizontal direction, and
an impurity concentration of the floating diffusion layer is lower than an impurity concentration of a source/drain diffusion layer of a transistor in the noise suppressing circuit.
9. The solid-state imaging apparatus according to claim 6 , wherein the vertical driver circuit and the horizontal driver circuit are composed of a dynamic logic circuit.
10. The solid-state imaging apparatus according to claim 6 , wherein an impurity concentration of a source/drain diffusion layer of a part of a plurality of transistors constituting the vertical driver circuit and the horizontal driver circuit is lower than an impurity concentration of a source/drain diffusion layer of another part of the plurality of transistors constituting the vertical driver circuit and the horizontal driver circuit.
11. The solid-state imaging apparatus according to claim 1 , wherein the source/drain diffusion layer of a transistor in the driving unit is covered with a salicide layer.