SOI-based tunable laser
View Patent ↗A silicon-on-insulator (SOI)-based tunable laser is formed to include the gain medium (such as a semiconductor optical amplifier) disposed within a cavity formed within the SOI substrate. A tunable wavelength reflecting element and associated phase matching element are formed on the surface of the SOI structure, with optical waveguides formed in the surface SOI layer providing the communication between these components. The tunable wavelength element is controlled to adjust the optical wavelength. Separate discrete lensing elements may be disposed in the cavity with the gain medium, providing efficient coupling of the optical signal into the SOI waveguides. Alternatively, the gain medium itself may be formed to include spot converting tapers on its endfaces, the tapers used to provide mode matching into the associated optical waveguides.
1. An SOI-based tunable laser formed within a silicon-on-insulator (SOI) structure comprising a silicon substrate, a dielectric layer disposed over the silicon substrate and a relatively thin silicon surface layer formed over the dielectric layer, the SOI-based tunable laser comprising:
optical gain medium disposed within a cavity region formed in the SOI structure, the cavity region formed downward from a top major surface of said SOI structure and including optically smooth vertical sidewalls;
a tunable wavelength reflecting element formed within the SOI structure for selecting a particular wavelength output for said tunable laser;
a phase matching element formed within the SOI structure and disposed between the tunable wavelength reflecting element and the optical gain medium; and
optical waveguides formed along the relatively thin silicon surface layer to interconnect said optical gain medium, tunable wavelength reflecting element and phase matching element.
2. An SOI-based tunable laser as defined in claim 1 wherein the tunable wavelength reflecting element is selected from the group consisting of: Bragg gratings, Echelle gratings, ring resonators, Rowland circles.
3. An SOI-based tunable laser as defined in claim 1 wherein the phase matching element comprises an electro-absorption modulator formed within the SOI structure.
4. An SOI-based tunable laser as defined in claim 1 wherein the phase matching element comprises a thermal tuning element formed within the SOI structure.
5. An SOI-based tunable laser as defined in claim 1 wherein the optical gain medium comprises a semiconductor optical amplifier.
6. An SOI-based tunable laser as defined in claim 1 wherein the tunable laser further comprises
a first lensing element disposed in the cavity region between the optical gain medium and the phase matching element.
7. An SOI-based tunable laser as defined within claim 6 wherein the tunable laser further comprises a second lensing element disposed within the cavity region at the output of the optical gain medium.
8. An SOI-based tunable laser as defined in claim 1 wherein the optical gain medium includes spot converting tapers on the endfaces thereof.
9. An SOI-based tunable laser as defined in claim 1 wherein the tunable laser further comprises a temperature control element coupled to the tunable wavelength reflecting element for providing tuning to the wavelength reflected by said tunable wavelength reflecting element.
10. An SOI-based optical arrangement formed within a silicon-on-insulator (SOI) structure comprising a silicon substrate, a dielectric layer disposed over the silicon substrate and a relatively thin silicon surface layer formed over the dielectric layer, the SOI-based optical arrangement comprising:
a tunable laser including:
optical gain medium disposed within a cavity region formed in the SOI structure, the cavity region formed downward from a top major surface of said SOI structure and including optically smooth vertical sidewalls;
a tunable wavelength reflecting element formed within the SOI structure for selecting a particular wavelength output for said tunable laser;
a phase matching element formed within the SOI structure and disposed between the tunable wavelength reflecting element and the optical gain medium; and
optical waveguides formed along the relatively thin silicon surface layer to interconnect said optical gain medium, tunable wavelength reflecting element and phase matching element; and
an opto-electronic modulator formed within the SOI structure and disposed to receive the lasing output signal generated by the tunable laser, the opto-electronic modulator also responsive to an input electronic data signal for providing as an output a modulated optical signal representative of the input electronic data signal.