IP Library Granted Patent US 7,803,286
Granted Patent B2
US 7,803,286 · App. 12/292,889 · Granted Sep 28, 2010

Phosphor and manufacturing method for the same, and light source

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Quick Facts
Patent No.
US 7,803,286
App. No.
12/292,889
Granted
Sep 28, 2010
Kind
B2
Abstract

To provide a phosphor having an emission spectrum with a broad peak in a range from yellow color to red color (580 nm to 680 nm) and an excellent excitation band on the longer wavelength side from near ultraviolet/ultraviolet of excitation light to visible light (250 nm to 550 nm), and having an improved emission intensity. The phosphor is provided, which is given by a general composition formula expressed by MmAaBbOoNn:Z, (wherein element M is more than one kind of element having bivalent valency, element A is more than one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element B is more than one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is more than one kind of element selected from rare earth elements or transitional metal elements, satisfying m>0, a>0, b>0 o≧0, and n=2/3m+a+4/3b−2/3o), and further containing boron and/or fluorine.

Claims (19)

1. A phosphor, which is given by a general composition formula expressed by MmAaDbOoNn:Z, (wherein element M is at least one kind of element having bivalent valency, element A is at least one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element D is at least one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is at least one kind of element selected from rare earth elements or transitional metal elements, expressed by m=a=b=1 and n=2/3m+a+4/3b−2/3o), and further containing fluorine or boron and fluorine.

2. A manufacturing method of a phosphor, containing a phosphor crystal which is given by a general composition formula expressed by MmAaDbOoNn:Z, (wherein element M is at least one kind of element having bivalent valency, element A is at least one kind of element having tervalent valency selected from the group consisting of Al, Ga, In, Tl, Y, Sc, P, As, Sb, and Bi, element D is at least one kind of element having tetravalent valency, O is oxygen, N is nitrogen, and element Z is at least one kind of element selected from rare earth elements or transitional metal elements, and further containing fluorine or boron and fluorine expressed by m=a=b=1, and n=2/3m+a+4/3b−2/3o),

said method comprising the steps of:

weighing and mixing the raw materials in an inert atmosphere to manufacture a mixture;

firing this mixture to manufacture a fired substance, and

pulverizing this fired substance to manufacture the phosphor,

wherein a fluorine compound or a boron compound and a fluorine compound are further added to a raw material for forming the phosphor expressed by the composition formula MmAaDbOoNn:Z.

3. A light source, comprising the phosphor according to claim 1 , and a light emitting part.

4. The light source according to claim 3 , wherein a wavelength range of light emitted from the light emitting part is 250 nm to 550 nm.

5. The light source according to claim 3 , wherein an LED (light emitting diode) is used as the light emitting part.

6. A manufacturing method of the phosphor having the structure of claim 1 , comprising the steps of:

weighting and mixing a compound containing the element M, the compound containing the element A, the compound containing the element Z or a simple substance of the element Z, and a fluorine compound or a boron compound and a fluorine compound, to obtain a mixture;

firing the mixture to manufacture a fired object; and

pulverizing the fired object, to obtain the phosphor,

wherein a fluorine compound containing 100 ppm or less content of Fe or a boron compound and a fluorine compound containing 100 ppm or less content of Fe are used.

7. The manufacturing method of the phosphor according to claim 6 , wherein

a nitride of group II expressed by a general formula M 3 N 2 containing 100 ppm or less of element Fe is used as the compound containing the element M.

8. The manufacturing method of the phosphor according to claim 7 , wherein

the nitride of group II is manufactured by nitriding a simple substance of 2N or more containing 100 ppm or less Fe is used, in a nitrogen atmosphere or in an ammonia atmosphere at the temperature of 300° C. or more.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 29, 2015
From: DOWA ELECTRONICS MATERIALS CO., LTD.
To: CITIZEN ELECTRONICS CO., LTD.
Reel/Frame 035927/0975 →