Semiconductor light emitting element and wafer
View Patent ↗There are provided a semiconductor light emitting element which allows an improvement in light extraction efficiency without increasing the number of fabrication steps, and a wafer. In a semiconductor light emitting element 1 formed by laminating a compound semiconductor layer 3 on a single crystal substrate, and dividing the single crystal substrate into pieces, the side faces 21 to 24 of each of substrate pieces 2 as the divided single crystal substrate are formed such that the side face 21 used as the reference of the substrate piece 2 forms an angle of 15° with respect to the (1-100) plane, and that the side faces 21 to 24 are formed of planes different from cleaved planes of a crystalline structure in the single crystal substrate.
1. A semiconductor light emitting element formed by laminating a compound semiconductor layer on a single crystal substrate, and dividing the single crystal substrate into pieces, wherein
the single crystal substrate has a hexagonal crystalline structure in which a (0001) plane is a lamination plane on which the compound semiconductor layer is laminated, and a (1-100) plane, a (0-110) plane, a (-1010) plane, a (-1100) plane, a (01-10) plane, and a (10-10) plane are cleavage planes,
all side faces of each of substrate pieces as the divided single crystal substrate are formed of planes different from the cleavage planes of the single crystal substrate, and
the lamination plane of the substrate piece is formed in a generally rectangular shape, and one side face of the substrate piece forms an angle of not less than 5° and not more than 25° with respect to any of the cleavage planes.
2. The semiconductor light emitting element of claim 1 , wherein the lamination plane of the substrate piece is formed in a generally rectangular shape, and one side face of the substrate piece forms an angle of not less than 10° and not more than 20° with respect to any of the cleavage planes.
3. The semiconductor light emitting element of claim 1 , wherein the single crystal substrate is formed of any of a gallium nitride-based compound semiconductor, a zinc oxide-based compound semiconductor, a silicon carbide compound semiconductor, and an aluminum nitride-based compound semiconductor.
4. The semiconductor light emitting element of claim 1 , wherein the compound semiconductor layer laminated on the single crystal substrate is formed of any of a gallium nitride-based compound semiconductor, a zinc oxide-based compound semiconductor, and an aluminum nitride-based compound semiconductor.