Atmospheric pressure plasma, generating method, plasma processing method and component mounting method using same, and device using these methods
View Patent ↗A first inert gas ( 5 ) is supplied into a reaction space ( 1 ) and a high-frequency power supply ( 4 ) applies a high-frequency electric field so that a primary plasma ( 6 ) composed of the first inert gas which has been made into the plasma is ejected from the reaction space. A mixed gas area ( 10 ) in which a mixed gas ( 8 ) having a second inert gas ( 12 ) as a main ingredient and a proper amount of a reactive gas ( 13 ) mixed is formed. The primary plasma collides into the mixed gas area to generate a secondary plasma ( 11 ) composed of the mixed gas which has been made into the plasma, and the secondary plasma is sprayed on a processed object (S) to carry out a plasma processing. Accordingly, the plasma processing is carried out in a wide range by an atmospheric pressure plasma generated by a small input power.
1. A method for generating an atmospheric pressure plasma, comprising:
generating a plasma by supplying a first inert gas into a reaction vessel forming a reaction space and applying a high-frequency voltage to an antenna disposed in the vicinity of the reaction space to eject a primary plasma comprising the first inert gas that has been made into an inductively coupled plasma from the reaction space; and
expanding plasma to form a mixed gas area which contains a second inert gas as a main ingredient and a proper amount of a reactive gas mixed with the second inert gas so that the primary plasma collides with the mixed gas area at a portion lower than a lower end of the reaction vessel in order to generate a secondary plasma comprising the mixed gas that has been made into the plasma and the secondary plasma expands in the mixed gas area, wherein a mixed gas vessel is disposed adjacently to a side of the lower end of the reaction vessel, and a gas inlet disposed in an upper position of the mixed gas vessel supplies the mixed gas to the inside of the mixed gas vessel disposed on the periphery of the reaction vessel.
2. A plasma processing method comprising:
supplying a first inert gas to a reaction vessel forming a reaction space provided in a plasma head and applying a high-frequency voltage to an antenna disposed in the vicinity of the reaction space to continuously eject a primary plasma from the reaction space;
forming a mixed gas area, which contains a second inert gas as a main ingredient and a proper amount of a reactive gas mixed with the second inert gas, in the plasma head or in the vicinity thereof in order to make the primary plasma collide with the mixed gas area at a portion lower than a lower end of the reaction vessel to generate a secondary plasma and to make the secondary plasma expand in the mixed gas area, wherein a mixed gas vessel is disposed adjacently to a side of the lower end of the reaction vessel, and a gas inlet disposed in an upper position of the mixed gas vessel supplies the mixed gas to the inside of the mixed gas vessel disposed on the periphery of the reaction vessel; and
forming the mixed gas area only at a processed portion and generating the secondary plasma when the processed portion is subjected to the plasma processing while relatively moving the plasma head and a processed object in order to carry out the processing by spraying the generated secondary plasma on the processed portion of the processed object.
3. A method for mounting a component on a substrate, comprising:
supplying a first inert gas ( 5 ) to a reaction space ( 1 , 24 ) and applying a high-frequency voltage to an antenna ( 3 ) disposed in the vicinity of the reaction space to eject a primary plasma ( 6 ) composed of an inductively coupled plasma from the reaction space;
making the primary plasma collide with a mixed gas area ( 10 , 29 ) which contains a second inert gas ( 12 ) as a main ingredient and a proper amount of a reactive gas ( 13 ) mixed therewith to generate a secondary plasma ( 11 );
applying the generated secondary plasma to a component to-be-bonded portion ( 77 ) of a substrate ( 76 ) to carry out a plasma processing; and
bonding a component ( 19 ) on the component to-be-bonded portion having been subjected to the plasma processing.
4. The method for mounting a component on a substrate according to claim 3 , wherein
the substrate ( 76 ) is a panel for a flat panel display, the component to-be-bonded portion ( 77 ) is a connection electrode ( 82 ) provided at an end of the panel, the component includes an anisotropic conductive membrane ( 78 ) attached on the connection electrode and an electronic component ( 79 ) for driving the flat panel display temporarily or finally press-fitted thereon, and
a component mounting step includes a plasma processing step, an anisotropic conductive membrane attaching step, a temporary press-fitting step, and a final press-fitting step.