Electric field information reading head, electric field information writing/reading head and fabrication methods thereof and information storage device using the same

1. An apparatus, comprising:

a resistance region formed in a central part at one end of a surface of an electric field information reading/writing tin head which faces a recording medium, the resistance region being lightly doped with impurities;

source and drain regions formed on both sides of the resistance region, the source and the drain regions being more highly doped with impurities than the resistance region;

an insulating layer formed on the resistance region; and

a write element formed on the insulating layer.

2. The apparatus of claim 1 , comprising a semiconductor substrate wherein the semiconductor substrate is a p-type semiconductor, and the resistance region and the source and the drain regions are n-type semiconductors.

3. The apparatus of claim 1 , comprising a semiconductor substrate wherein the semiconductor substrate is an n-type semiconductor, and the resistance region and the source and the drain regions are p-type semiconductors.

4. The apparatus of claim 1 , wherein the source and the drain regions respectively extend along a side adjacent to the surface facing a recording medium, and electrodes are connected electrically with the source region and the drain region, respectively.

5. The apparatus of claim 4 , further comprising an ABS pattern formed on the surface facing a recording medium.

6. An information storage device comprising:

the apparatus of claim 1 ; and

an information storage medium comprising a ferroelectric recording layer;

wherein the surface facing a recording medium floats to a surface of the recording layer with a predetermined interval to write information on the information storage medium or read information written in the information storage medium.

7. The apparatus of claim 1 , wherein the write element comprises a writing electrode.

8. The apparatus of claim 1 , wherein:

the semiconductor substrate is doped with first impurities;

the resistance, source, and drain regions are doped with second impurities; and

the first and second impurities differ.

9. A method comprising:

preparing a semiconductor substrate of an electric field information reading head;

forming a mask layer on the semiconductor substrate and patterning the mask layer in order to expose areas for forming source and drain regions;

forming the source and drain regions by doping with impurities having a different polarity from that of the semiconductor substrate on a surface, which faces a recording medium;

removing some part of the mask layer in order to expose an area for forming a resistance region on the semiconductor substrate; and

forming the resistance region by doping with impurities having different polarity from that of the semiconductor substrate on the surface.

10. The method of claim 9 , wherein forming the mask layer comprises:

thermal-oxidizing the surface layer formed on the semiconductor substrate to form an oxidized mask layer; and

coating a first photoresist on the oxidized mask layer to form a patterned oxidized mask layer in order to expose areas for forming the source region and the drain region on the semiconductor substrate using photolithography.

11. The method of claim 10 , wherein forming the source region and drain region comprises:

ion-implanting the impurities in the semiconductor substrate and the oxidized mask layer to form the source region and the drain region on the surface of the semiconductor substrate.

12. The method of claim 11 , wherein removing comprises:

coating a second photoresist on the oxidized mask layer and selectively removing the second photoresist in order to expose the area for forming the resistance region; and

etching the oxidized mask layer using the photolithography in order to expose the areas for forming the source region and drain region.

13. The method of claim 12 , wherein forming the resistance region comprises:

ion-implanting the impurities having lower energy and concentration than that in forming the source region and the drain region on the oxidized mask on the upper surface and the medium opposition surface of the semiconductor substrate; and

removing the oxidized mask layer.

14. The method of claim 9 , wherein forming the mask layer further comprises:

coating a first photoresist on the semiconductor substrate to form a patterned photoresist mask layer in order to expose the areas for forming the source region and drain region.

15. The method of claim 14 , wherein forming the source region and drain region comprises:

ion-implanting the impurities in the semiconductor substrate and the photoresist mask layer formed on the semiconductor substrate to form the source region and the drain region.

16. The method of claim 15 , wherein removing further comprises:

depositing a metal layer on the photoresist mask layer;

coating a second photoresist on the metal layer and selectively removing the second photoresist in order to expose the areas for forming the resistance region using photolithography; and etching the metal layer in order to expose the areas for forming the resistance region, the source region, and drain region.

17. The method of claim 16 , wherein doping the resistance region comprises:

ion-implanting the impurities having lower energy and concentration than those in forming the source region and the drain region on the metal layer on the upper surface and the medium opposition surface of the semiconductor substrate; and

removing the metal layer and the photoresist mask layer.

18. The method of claim 9 , further comprising:

forming electrodes on a surface of the semiconductor substrate.

19. The method of claim 18 comprising:

forming at least one unit constituting rows of the at least one electric field information reading head on a wafer;

cutting per the unit on the wafer;

forming an ABS pattern each corresponding to the electric field information reading head on a cutting surface of the unit; and

separating each of the electric field information reading head from the unit on which the ABS pattern is formed.

20. A method of fabricating an electric field information writing/reading head, the method comprising:

fabricating the electric field information reading head of claim 9 ; and

forming an insulating layer and a writing electrode on a resistance region.

21. The method of claim 20 , further comprising:

forming an electrode on an upper surface of the semiconductor substrate.

22. The method of claim 21 , comprising:

forming at least one unit constituting rows of the at least one electric field information writing/reading head on a wafer;

cutting per the unit on the wafer;

forming an ABS pattern each corresponding to the electric field information reading head on a cutting surface of the unit; and

separating each of the electric field information reading head from the unit on which the ABS pattern is formed.