Variable resistance nonvolatile memory apparatus
View Patent ↗A nonvolatile memory apparatus includes a first electrode ( 111 ), a second electrode ( 112 ), a variable resistance layer ( 113 ) which is disposed between the electrodes, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes, a first terminal ( 103 ) connected to the first electrode, and a second terminal ( 104 ) connected to the second terminal. The variable resistance layer comprises at least a tantalum oxide, and is configured to satisfy 0<x<2.5 when the tantalum oxide is represented by TaOx; and wherein when a resistance value between the electrodes in a state where the variable resistance layer is in the low-resistance state is RL, a resistance value between the electrodes in a state where the variable resistance layer is in the high-resistance state is RH, and a resistance value of a portion other than the variable resistance layer in a current path connecting the first terminal to the second terminal via the first electrode, the variable resistance layer and the second electrode, is R 0 , R 0 satisfies RL<R 0.
1. A nonvolatile memory apparatus comprising:
a first electrode;
a second electrode;
a variable resistance layer which is disposed between the first electrode and the second electrode, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the first electrode and the second electrode, the plurality of resistance states including a low-resistance state and a high-resistance state whose resistance value is higher than a resistance value of the low-resistance state;
a first terminal connected to the first electrode; and
a second terminal connected to the second electrode; wherein
the variable resistance layer comprises at least a tantalum oxide, and is configured to satisfy 0<x<2.5 when the tantalum oxide is represented by TaOx; and wherein
when a resistance value between the first electrode and the second electrode in a state where the variable resistance layer is in the low-resistance state is RL, a resistance value between the first electrode and the second electrode in a state where the variable resistance layer is in the high-resistance state is RH, and a resistance value of a portion other than the variable resistance layer in a current path connecting the first terminal to the second terminal via the first electrode, the variable resistance layer and the second electrode, is R 0 ,
R 0 satisfies RL<R 0 .
2. The nonvolatile memory apparatus according to claim 1 , wherein
the variable resistance layer comprises at least a tantalum oxide, and is configured to satisfy 0<x≦1.9 when the tantalum oxide is represented by TaOx.
3. The nonvolatile memory apparatus according to claim 1 , wherein the variable resistance layer comprises at least a tantalum oxide, and is configured to satisfy 0.5≦x≦1.9 when the tantalum oxide is represented by TaOx.
4. The nonvolatile memory apparatus according to claim 1 , wherein the variable resistance layer comprises at least a tantalum oxide, and is configured to satisfy 0.8≦x≦1.9 when the tantalum oxide is represented by TaOx.
5. The nonvolatile memory apparatus according to claim 1 , wherein a resistor is provided in series with the variable resistance layer in the current path;
and wherein when a resistance value of the resistor is R 0 , R 0 satisfies RL<R 0 .