Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated region
View Patent ↗A semiconductor light emitting element includes a substrate 11 having a defect concentrated region 11 a which has a crystal defect density higher than in the other region. On the substrate 11 , a semiconductor layer 12 is formed. On the defect concentrated region 11 a , a first electrode 13 is formed. On the semiconductor layer 12 , a second electrode 14 is formed.
1. A semiconductor light emitting element comprising:
a substrate having only a single defect concentrated region which has a crystal defect density higher than in the other region thereof;
a semiconductor layer formed on the substrate and including an n-type layer, a light emitting layer, and a p-type layer which are formed successively on the substrate;
a first electrode formed on the defect concentrated region; and
a second electrode formed on the semiconductor layer, wherein
the single defect concentrated region does not traverse the substrate and does not divide a region having a crystal structure different from a crystal structure of the defect concentrated region into two separate regions,
a region of the substrate except the defect concentrated region has the same crystal structure, and
the light emitting layer is formed on a region except the defect concentrated region.
2. The semiconductor light emitting element of claim 1 , wherein
the first electrode is formed on the n-type layer, and
the second electrode is formed on the p-type layer.
3. The semiconductor light emitting element of claim 1 , wherein the defect concentrated region is formed in a peripheral portion of the substrate.
4. The semiconductor light emitting element of claim 3 , wherein the peripheral portion of the substrate is a corner portion of the substrate.
5. The semiconductor light emitting element of claim 1 , wherein the defect concentrated region is formed in a center portion of the substrate.
6. The semiconductor light emitting element of claim 5 , wherein the second electrode is formed so as to surround the defect concentrated region.
7. The semiconductor light emitting element of claim 1 , wherein the substrate is a cut out portion of a wafer in which the defect concentrated regions are periodically arranged.
8. The semiconductor light emitting element of claim 1 , wherein
the semiconductor layer includes an n-type layer, a light emitting layer, and a p-type layer which are formed successively on the substrate,
the first electrode is formed on the substrate, and
the second electrode is formed on the p-type layer.
9. The semiconductor light emitting element of claim 1 , wherein a current flowing between the first electrode and the second electrode does not pass through a part of the semiconductor layer formed on the defect concentrated region.
10. The semiconductor light emitting element of claim 9 , wherein
a part of the semiconductor layer formed on the defect concentrated region has the same crystal as the crystal structure of the defect concentrated region, and the rest of the region of the semiconductor layer has a crystal structure different from the crystal structure of the defect concentrated region, and
the first electrode has a center portion which is in contact with the part of the semiconductor layer having the same crystal as the crystal structure of the defect concentrated region, and a peripheral portion which is in contact with the rest of the semiconductor layer having a crystal structure different from the crystal structure of the defect concentrated region.