Semiconductor integrated circuit device
View Patent ↗In a power phase period when in normal operation, switch portions SW 2 H and SW 2 L and switch portions SW 3 H and SW 3 L are turned ON, respectively, and switch portions SW 1 H and SW 1 L are turned OFF. And floating power supply is provided from an electrostatic capacitance element CS to buses A and B, a floating control circuit 4 , a transmitter circuit 5 , and a receiver circuit 6 , respectively. In a data phase period, the switch portions SW 1 H and SW 1 L are turned ON, and the switch portions SW 2 H, SW 2 L, SW 3 H, and SW 3 L are turned OFF. By that manner, the electrostatic capacitance element CS is charged by the power supply of a battery B, and an electrostatic capacitance element CH provides the floating power supply to the floating control circuit 4 , the transmitter circuit 5 , and the receiver circuit 6 , respectively. By this manner, a floating switch unit 7 in which the number of the switch portions is considerably reduced can be configured.
1. A semiconductor integrated circuit device having two externally-connected buses and a switching circuit which provides a power supply voltage to an arbitrary internal peripheral circuit, wherein
the switching circuit comprises:
a first switch unit connecting, to an externally-connected first electrostatic capacitance element, the power supply voltage provided from a battery;
a second switch unit providing an electrostatic capacitance charged in a second electrostatic capacitance element to the buses; and
a third switch unit charging an electrostatic capacitance of the first electrostatic capacitance element to the second electrostatic capacitance element and providing power supply to the internal peripheral circuit.
2. The semiconductor integrated circuit device according to claim 1 , wherein
the first switch unit comprises:
a first Hi-side switch portion in which a one connecting part thereof is connected to a power supply side of the battery and the other connecting part thereof is connected to a one connecting part of the first electrostatic capacitance element; and
a first Lo-side switch portion in which a one connecting part thereof is connected to a reference potential side of the battery and the other connecting part thereof is connected to the other connecting part of the first electrostatic capacitance element,
the second switch unit comprises:
a second Hi-side switch portion in which a one connecting part thereof is connected to a one connecting part of the first electrostatic capacitance element and the other connecting part thereof is connected to one of the buses; and
a second Lo-side switch portion in which a one connecting part thereof is connected to the other connecting part of the first electrostatic capacitance element and the other connecting part thereof is connected to the other of the buses, and
the third switch unit comprises:
a third Hi-side switch portion in which a one connecting part thereof is connected to a one connecting part of the first electrostatic capacitance element and the other connecting part thereof is connected to a one connecting part of the second electrostatic capacitance element; and
a third Lo-side switch portion in which a one connecting part thereof is connected to the other connecting part of the first electrostatic capacitance element and the other connecting part thereof is connected to the other connecting part of the second electrostatic capacitance element.
3. The semiconductor integrated circuit device according to claim 2 , wherein
each of the first to third Hi-side switch portions comprises:
first and second MOS transistors which are connected in series and operated as a switch;
a first gate control unit which generates a gate control signal from an inputted control signal and drives and controls the first MOS transistor by the gate control signal;
a second gate control unit which outputs a gate control signal from an inputted control signal and drives and controls the second MOS transistor by the gate control signal;
a first power supply generating unit which generates a power supply voltage by which the first gate control unit is operated; and
a second power supply generating unit which generates a power supply voltage by which the second gate control unit is operated, and
each of the first to third Lo-side switch portions comprises:
third and fourth MOS transistors which are connected in series and operated as a switch;
a third gate control unit which generates a gate control signal from an inputted control signal and drives and controls the third MOS transistor by the gate control signal;
a fourth gate control unit which generates a gate control signal from an inputted control signal and drives and controls the fourth transistor by the gate control signal;
a third power supply generating unit which generates a power supply voltage by which the third gate control unit is operated; and
a fourth power supply generating unit which generates a power supply voltage by which the fourth gate control unit is operated.
4. The semiconductor integrated circuit device according to claim 3 , wherein
the first to fourth gate control units comprise:
level shift units which level-shift the inputted control signals, to convert them to voltage levels for driving the first to fourth MOS transistors, and output them; and
driver units which generate the gate control signals driving the first to fourth MOS transistors from the signals outputted from the level shift units, and output them.
5. The semiconductor integrated circuit device according to claim 4 , wherein
the driver units each have a configuration in which two inverters are connected in series.
6. The semiconductor integrated circuit device according to claim 5 , wherein
the first to fourth power supply generating units comprise Zener diodes connected between the power supply voltages provided from the battery, and
power supply voltages which generate, as references, Zener voltages of the Zener diodes are provided to the first to fourth gate control units.
7. The semiconductor integrated circuit device according to claim 5 , wherein
the first to fourth power supply generating units comprise:
first Zener diodes whose cathodes are connected to the power supply side of the battery;
second Zener diodes whose cathodes are connected to anodes of the first Zener diodes and whose anodes are connected to the reference potential side of the battery; and
switches connected between the anodes and the cathodes of the second Zener diodes, and
the switches become non-conductive states in performing acceleration tests of gate breakdown voltages in the first to fourth MOS transistors.
8. The semiconductor integrated circuit device according to claim 4 , wherein
the first to fourth power supply generating units comprise Zener diodes connected between the power supply voltages provided from the battery, and
power supply voltages which generate, as references, Zener voltages of the Zener diodes are provided to the first to fourth gate control units.
9. The semiconductor integrated circuit device according to claim 4 , wherein
the first to fourth power supply generating units comprise:
first Zener diodes whose cathodes are connected to the power supply side of the battery;
second Zener diodes whose cathodes are connected to anodes of the first Zener diodes and whose anodes are connected to the reference potential side of the battery; and
switches connected between the anodes and the cathodes of the second Zener diodes, and the switches become non-conductive states in performing acceleration tests of gate breakdown voltages in the first to fourth MOS transistors.
10. The semiconductor integrated circuit device according to claim 3 , wherein
the first to fourth power supply generating units comprise Zener diodes connected between the power supply voltages provided from the battery, and
power supply voltages which generate, as references, Zener voltages of the Zener diodes are provided to the first to fourth gate control units.
11. The semiconductor integrated circuit device according to claim 3 , wherein
the first to fourth power supply generating units comprise:
first Zener diodes whose cathodes are connected to the power supply side of the battery;
second Zener diodes whose cathodes are connected to anodes of the first Zener diodes and whose anodes are connected to the reference potential side of the battery; and
switches connected between the anodes and the cathodes of the second Zener diodes, and
the switches become non-conductive states in performing acceleration tests of gate breakdown voltages in the first to fourth MOS transistors.
12. The semiconductor integrated circuit device according to claim 1 , wherein
the first switch unit comprises:
a first Hi-side switch portion in which a one connecting part thereof is connected to a power supply side of the battery and the other connecting part thereof is connected to a one connecting part of the first electrostatic capacitance element; and
a first Lo-side switch portion in which a one connecting part thereof is connected to a reference potential side of the battery and the other connecting part thereof is connected to the other connecting part of the first electrostatic capacitance element,
the third switch unit comprises:
a third Hi-side switch portion in which a one connecting part thereof is connected to a one connecting part of the first electrostatic capacitance element and the other connecting part thereof is connected to a one connecting part of the second electrostatic capacitance element; and
a third Lo-side switch portion in which a one connecting part thereof is connected to the other connecting part of the first electrostatic capacitance element and the other connecting part thereof is connected to the other connecting part of the second electrostatic capacitance element, and
the second switch part comprises:
a second Hi-side switch portion in which a one connecting part thereof is connected to a one connecting part of the second electrostatic capacitance element and the other connecting part thereof is connected to one of the buses; and
a second Lo-side switch portion in which a one connecting part thereof is connected to the other connecting part of the second electrostatic capacitance element and the other connecting part thereof is connected to the other of the buses.
13. The semiconductor integrated circuit device according to claim 12 , wherein
each of the first to third Hi-side switch portions comprises:
first and second MOS transistors which are connected in series and operated as a switch;
a first gate control unit which generates a gate control signal from an inputted control signal and drives and controls the first MOS transistor by the gate control signal;
a second gate control unit which outputs a gate control signal from an inputted control signal and drives and controls the second MOS transistor by the gate control signal;
a first power supply generating unit which generates a power supply voltage by which the first gate control unit is operated; and
a second power supply generating unit which generates a power supply voltage by which the second gate control unit is operated, and
each of the first to third Lo-side switch portions comprises:
third and fourth MOS transistors which are connected in series and operated as a switch;
a third gate control unit which generates a gate control signal from an inputted control signal and drives and controls the third MOS transistor by the gate control signal;
a fourth gate control unit which generates a gate control signal from an inputted control signal and drives and controls the fourth transistor by the gate control signal;
a third power supply generating unit which generates a power supply voltage by which the third gate control unit is operated; and
a fourth power supply generating unit which generates a power supply voltage by which the fourth gate control unit is operated.
14. The semiconductor integrated circuit device according to claim 13 , wherein
the first to fourth power supply generating units comprise Zener diodes connected between the power supply voltages provided from the battery, and
power supply voltages which generate, as references, Zener voltages of the Zener diodes are provided to the first to fourth gate control units.
15. The semiconductor integrated circuit device according to claim 13 , wherein
the first to fourth power supply generating units comprise:
first Zener diodes whose cathodes are connected to the power supply side of the battery;
second Zener diodes whose cathodes are connected to anodes of the first Zener diodes and whose anodes are connected to the reference potential side of the battery; and
switches connected between the anodes and the cathodes of the second Zener diodes, and
the switches become non-conductive states in performing acceleration tests of gate breakdown voltages in the first to fourth MOS transistors.
16. The semiconductor integrated circuit device according to claim 13 , wherein
the first to fourth gate control units comprise:
level shift units which level-shift the inputted control signals, to convert them to voltage levels for driving the first to fourth MOS transistors, and output them; and
driver units which generate the gate control signals driving the first to fourth MOS transistors from the signals outputted from the level shift units, and output them.
17. The semiconductor integrated circuit device according to claim 16 , wherein
the first to fourth power supply generating units comprise Zener diodes connected between the power supply voltages provided from the battery, and
power supply voltages which generate, as references, Zener voltages of the Zener diodes are provided to the first to fourth gate control units.
18. The semiconductor integrated circuit device according to claim 16 , wherein
the first to fourth power supply generating units comprise:
first Zener diodes whose cathodes are connected to the power supply side of the battery;
second Zener diodes whose cathodes are connected to anodes of the first Zener diodes and whose anodes are connected to the reference potential side of the battery; and
switches connected between the anodes and the cathodes of the second Zener diodes, and
the switches become non-conductive states in performing acceleration tests of gate breakdown voltages in the first to fourth MOS transistors.
19. The semiconductor integrated circuit device according to claim 16 , wherein
the driver units each have a configuration in which two inverters are connected in series.
20. The semiconductor integrated circuit device according to claim 19 , wherein
the first to fourth power supply generating units comprise Zener diodes connected between the power supply voltages provided from the battery, and
power supply voltages which generate, as references, Zener voltages of the Zener diodes are provided to the first to fourth gate control units.
21. The semiconductor integrated circuit device according to claim 19 , wherein
the first to fourth power supply generating units comprise:
first Zener diodes whose cathodes are connected to the power supply side of the battery;
second Zener diodes whose cathodes are connected to anodes of the first Zener diodes and whose anodes are connected to the reference potential side of the battery; and
switches connected between the anodes and the cathodes of the second Zener diodes, and
the switches become non-conductive states in performing acceleration tests of gate breakdown voltages in the first to fourth MOS transistors.