Disk drive device
View Patent ↗Embodiments of the present invention provide a highly reliable hard disk drive (HDD). In an HDD according to an embodiment of the present invention, solder at a solder joint for joining a pad of a head slider and a pad of a transmission wiring comprises the main component of Sn and atomic percent to atomic percent of indium. The solder exhibits the γ phase within the range of −150° C. to 120° C. Accordingly, even if the HDD is left at a low temperature for a long time, the solder joint is not broken.
1. A disk drive device comprising:
a head for accessing a disk;
an actuator for supporting the head to move the head above the magnetic disk;
a transmission wiring disposed on the actuator for transmitting signals of the head; and
solder for connecting the transmission wiring on the actuator and comprising the first main component of tin and the second main component of indium, the solder having a crystal structure, formed by the first main component of tin and the second main component of indium, being a simple hexagonal structure at least within a temperature range of −40° C. to 90° C.
2. The disk drive device according to claim 1 , wherein the solder is used for connecting an electrode pad of the head and the transmission wiring.
3. The disk drive device according to claim 2 , further comprising:
a gold film formed on a contact surface of the electrode pad to the solder; and
a layer mainly composed of an intermetallic compound or a solid solution of gold, tin, and indium between the pad and the solder.
4. The disk drive device according to claim 1 , wherein the solder contains at least one element selected from a group of cobalt, silver, and copper as an additive element.
5. The disk drive device according to claim 4 , wherein the solder contains 0.001 atomic percent to 1 atomic percent of cobalt.
6. The disk drive device according to claim 4 , wherein the solder contains 0.1 atomic percent to 3.8 atomic percent of silver.
7. The disk drive device according to claim 4 , wherein the solder contains 0.1 atomic percent to 1.3 atomic percent of copper.
8. The disk drive device according to claim 1 , wherein the solder contains 15 atomic percent to 27 atomic percent of indium.
9. A disk drive device comprising:
a head for accessing a disk;
an actuator for supporting the head to move the head above the magnetic disk;
a transmission wiring disposed on the actuator for transmitting signals of the head; and
solder containing the main component of tin and 15 atomic percent to 27 atomic percent of indium for connecting the transmission wiring on the actuator, the solder having a crystal structure, formed by said tin and said indium, being a simple hexagonal structure at least within a temperature range of −40° C. to 90° C.
10. The disk drive device according to claim 9 , wherein the solder is used for connecting an electrode pad of the head and the transmission wiring.
11. The disk drive device according to claim 10 , further comprising:
a gold film formed on the contact surface of the electrode pad to the solder; and
a layer mainly composed of an intermetallic compound or a solid solution of gold, tin, and indium between the pad and the solder.
12. The disk drive device according to claim 9 , wherein the solder contains at least one element selected from a group of cobalt, silver, and copper as an additive element.
13. The disk drive device according to claim 12 , wherein the solder contains 0.001 atomic percent to 1 atomic percent of cobalt.
14. The disk drive device according to claim 12 , wherein the solder contains 0.1 atomic percent to 3.8 atomic percent of silver.
15. The disk drive device according to claim 12 , wherein the solder contains 0.1 atomic percent to 1.3 atomic percent of copper.
16. A method of soldering transmission wiring in a disk drive device (HDD), comprising:
connecting, using solder, a transmission wiring for transmitting signals between an actuator of the HDD and a read/write head of the HDD,
wherein the solder comprises tin and indium, and wherein the solder has a crystal structure, formed by the tin and the indium, being a simple hexagonal structure while the solder is within a temperature range of −40° C. to 90° C.
17. The method of claim 16 , wherein the solder contains 15 atomic percent to 27 atomic percent of indium.
18. The method of claim 17 , wherein the solder further contains 0.001 atomic percent to 1 atomic percent of cobalt.
19. The method of claim 17 , wherein the solder further contains 0.1 atomic percent to 3.8 atomic percent of silver.
20. The method of claim 17 , wherein the solder further contains 0.1 atomic percent to 1.3 atomic percent of copper.