Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device
A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O 2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.
1. A method of growing a silicon oxycarbide layer comprising the steps of:
preparing an underlying layer; and
growing a silicon oxycarbide layer on said underlying layer by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of said carbon dioxide gas,
wherein the silicon oxycarbide layer has carbon composition in the silicon oxycarbide layer is 18 at % or larger and a specific dielectric constant of at least 3.0 and at most about 3.1.
2. The method of growing a silicon oxycarbide layer according to claim 1 , wherein the flow rate of said oxygen gas is 0%.
3. The method of growing a silicon oxycarbide layer according to claim 1 , wherein said vapor deposition is performed at a pressure lower than 4 torr.
4. The method of growing a silicon oxycarbide layer according to claim 3 , further comprising the step of performing a CO 2 plasma process after the growth of said silicon oxycarbide layer.
5. The method of growing a silicon oxycarbide layer according to claim 1 , wherein said vapor deposition is performed at a pressure higher than 4 torr.
6. The method of growing a silicon oxycarbide layer according to claim 1 , wherein said vapor deposition is a plasma enhanced vapor deposition.