Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument
View Patent ↗A method of manufacturing a semiconductor device forms a penetrating hole in a substrate so that the penetrating hole extends from a first surface of the substrate to a second surface of the substrate being opposite to the first surface. An internal wall surface of the penetrating hole has a protrusion formed of a material constituting the substrate, the first surface of the substrate being closer to the protrusion than the second surface. A conductive member is formed on the first surface so that the conductive member covers the penetrating hole. A semiconductor chip is mounted on the first surface so that an electrode of the semiconductor chip is electrically connected to the conductive member. An external electrode is provided through the penetrating hole so that the external electrode is electrically connected to the conductive member and the external electrode projects from the second surface of the substrate.
1. A method of manufacturing a semiconductor device, the method comprising:
providing a substrate;
forming a penetrating hole in the substrate so that the penetrating hole extends from a first surface of the substrate to a second surface of the substrate being opposite to the first surface of the substrate and an internal wall surface of the penetrating hole has a protrusion formed of a material constituting the substrate, the first surface of the substrate being closer to the protrusion than the second surface of the substrate;
forming a conductive member on the first surface of the substrate;
mounting a semiconductor chip on the first surface of the substrate so that an electrode of the semiconductor chip is electrically connected to the conductive member; and
providing an external electrode through the penetrating hole so that the external electrode is connected to a first portion of the conductive member overlapping the penetrating hole and the external electrode projects from the second surface of the substrate.
2. The method of manufacturing a semiconductor device as defined in claim 1 ,
wherein the forming of the penetrating hole includes punching the substrate from the first surface of the substrate to the second surface of the substrate.
3. The method of manufacturing a semiconductor device as defined in claim 1 ,
wherein the forming of the penetrating hole includes punching the substrate from the first surface of the substrate to the second surface of the substrate so that a part of the substrate is drawn into the penetrating hole.
4. The method of manufacturing a semiconductor device as defined in claim 1 ,
wherein, in the forming of the penetrating hole, the penetrating hole is formed by a laser.
5. The method of manufacturing a semiconductor device as defined in claim 1 ,
wherein, in the forming of the penetrating hole, the penetrating hole is formed by wet etching.
6. The method of manufacturing a semiconductor device as defined in claim 1 ,
wherein, in the providing of the external electrode, the external electrode is provided to be in contact with the protrusion.
7. The method of manufacturing a semiconductor device as defined in claim 1 ,
wherein, in the providing of the external electrode, the external electrode is provided to be in contact with a first part of a surface of the protrusion, the first part of the surface of the protrusion facing a second opening of the penetrating hole in the second surface of the substrate.
8. The method of manufacturing a semiconductor device as defined in claim 1 ,
wherein, in the providing of the external electrode, the external electrode is provided to be in contact with a second part of a surface of the protrusion, the second part of the surface of the protrusion facing a first opening of the penetrating hole in the first surface of the substrate.
9. The method of manufacturing a semiconductor device as defined in claim 1 ,
wherein, in the forming of the penetrating hole, the penetrating hole is formed so that a second part of a surface of the protrusion is curved in a cross-sectional view, the second part of the surface of the protrusion facing a first opening of the penetrating hole in the first surface of the substrate.
10. A method of manufacturing a semiconductor device, the method comprising:
providing a substrate;
forming a penetrating hole in the substrate so that the penetrating hole extends from a first surface of the substrate to a second surface of the substrate being opposite to the first surface of the substrate and an internal wall surface of the penetrating hole has a protrusion formed of a material constituting the substrate, the first surface of the substrate being closer to the protrusion than the second surface of the substrate;
forming a conductive member on the first surface of the substrate;
mounting a semiconductor chip on the first surface of the substrate so that an electrode of the semiconductor chip is electrically connected to the conductive member; and
providing a conductive material in the penetrating hole so that the conductive material is connected to a first portion of the conductive member overlapping the penetrating hole and the conductive material is in contact with a first part of a surface of the protrusion facing a second opening of the penetrating hole in the second surface of the substrate.
11. The method of manufacturing a semiconductor device as defined in claim 10 ,
wherein, in the providing of the conductive material, the conductive material is provided to be in contact with a second part of the surface of the protrusion facing a first opening of the penetrating hole in the first surface of the substrate.
12. The method of manufacturing a semiconductor device as defined in claim 10 ,
wherein, in the forming of the penetrating hole, the penetrating hole is formed so that a second part of the surface of the protrusion is curved in a cross-sectional view, the second part of the surface of the protrusion facing a first opening of the penetrating hole in the first surface of the substrate.