Method for manufacturing semiconductor device
View Patent ↗In a method of manufacturing a semiconductor device, a first film is formed directly on a semiconductor substrate and a second film is formed on the first film. A region of the second film is then etched to form an opening that exposes the first film. The first film is then arbitrarily patterned by etching to expose a surface of the semiconductor substrate. Thereafter, the second film and the exposed surface of the semiconductor substrate are simultaneously etched using the patterned first film as a mask and in an etching ambient having a low etching rate for the first film and having a high etching rate for the second film and the semiconductor substrate until the second film is almost completely etched and a detection amount of a monitored element of the first film increases.
1. A method of manufacturing a semiconductor device, comprising:
forming a first film directly on a semiconductor substrate;
forming a second film on the first film;
removing a region of the second film by a first etching step to form an opening that exposes the first film;
patterning the exposed first film by a second etching step separate and independent from the first etching step to expose a surface of the semiconductor substrate through the first film directly over the exposed surface of the semiconductor substrate; and
thereafter etching the second film and the exposed surface of the semiconductor substrate simultaneously using the patterned first film as a mask and in an etching ambient having a low etching rate for the first film and having a high etching rate for the second film and the semiconductor substrate until the second film is almost completely etched and a detection amount of a monitored element of the first film increases.
2. A method of manufacturing a semiconductor device according to claim 1 ; wherein the semiconductor substrate comprises a silicon substrate, the first film comprises a silicon oxide film, and the second film comprises one of a polycrystalline silicon film and a silicon nitride film.
3. A method of manufacturing a semiconductor device according to claim 1 ; wherein the semiconductor substrate comprises a silicon substrate, the first film comprises a metal film, and the second film comprises a silicon oxide deposition film.
4. A method of manufacturing a semiconductor device, comprising:
forming a first film directly on a semiconductor substrate;
forming a second film on the first film;
removing a region of the second film by a first etching step to form an opening that exposes the first film;
patterning the exposed first film by a second etching step separate and independent from the first etching step until a surface of the semiconductor substrate directly below the patterned first film is exposed, the patterned first film serving as a mask for trench etching; and
thereafter performing trench etching using the patterned first film as a mask by etching the second film and the surface of the semiconductor substrate simultaneously in an etching ambient having a low etching rate for the first film and having a high etching rate for the second film and the semiconductor substrate until the second film is almost completely etched and a detection amount of a monitored element of the first film increases to thereby form a trench structure in the semiconductor substrate.
5. A method of manufacturing a semiconductor device according to claim 4 ; wherein the semiconductor substrate comprises a silicon substrate, the first film comprises a silicon oxide film, and the second film comprises one of a polycrystalline silicon film and a silicon nitride film.
6. A method of manufacturing a semiconductor device according to claim 4 ; wherein the semiconductor substrate comprises a silicon substrate, the first film comprises a metal film, and the second film comprises a silicon oxide deposition film.