Horizontal nanotube/nanofiber growth method

1. A method for forming a nanotube/nanofiber growth catalyst on the sides of portions of a layer of a first material, comprising the steps of:

depositing a layer of a first thickness of a second material;

forming flared openings at given locations of the layer;

depositing a catalyst layer of a second thickness smaller than the first thickness;

depositing a layer of the first material over a thickness greater than that of the thin layer of the second material;

eliminating by chem./mech. polishing the upper portion of the structure up to the high level of the layer of the second material; and

eliminating the second material facing selected sides of the layer portions of the first material.

2. The method of claim 1 , thither comprising: thermal processing.

3. The method of claim 1 , wherein the deposition of the catalyst layer is performed obliquely.

4. A method for forming a connection level of an integrated circuit comprising the steps of:

depositing an insulating layer;

forming flared openings in the layer at the locations where a connection is desired to be established with a lower-level via and at end locations of rectilinear conductive tracks;

depositing a nanotube/nanofiber growth catalyst layer;

filling the openings with conductive pads;

eliminating portions of the insulating layer in rectilinear regions extending between two opposite surfaces of conductive pads; and

growing nanotubes/nanofibers.

5. The method of claim 4 , wherein the conductive material pads are copper.

6. The method of claim 4 , further comprising, after the catalytic material deposition step, the step of depositing a barrier layer.

7. The method of claim 4 , wherein the nanotubes/nanofibers are carbon nanotubes and the catalyst is a material selected from the group of materials of the family of iron and of their oxides or compounds.

8. The method of claim 7 , wherein the catalyst layer is submitted to a thermal coalescence processing immediately before the nanotube growth step.