Semiconductor memory device and control method thereof

1. A semiconductor memory device comprising:

a memory cell array having a normal memory cell and a redundant memory cell that is used to replace the normal memory cell when it is defective;

a predecoder generating a predecode signal by predecoding a row address supplied in synchronism with an active command;

a repair determining circuit determining whether the row address is a defective address;

a repair address decoder generating a repair address when the repair determining circuit detects that the row address is a defective address;

a word driver selecting a word line corresponding to the normal memory cell based on the predecode signal when the repair determining circuit detects that the row address is not a defective address, and selecting a word line corresponding to the redundant memory cell based on the repair address when the repair determining circuit detects that the row address is a defective address; and

a signal control circuit resetting the repair address without resetting the predecode signal, in response to issuance of a precharge command.

2. The semiconductor memory device as claimed in claim 1 , further comprising a plurality of signal wirings for transmitting the predecode signal, the signal wirings having a twist structure in which the signal wirings adjacent to each other are switched to one another.

3. The semiconductor memory device as claimed in claim 2 , further comprising a shield power supply wiring arranged between the signal wirings.

4. The semiconductor memory device as claimed in claim 1 , wherein

the signal control circuit generates a timing signal which controls a start timing of the word driver, and

the timing signal is activated based on a slower transition timing of either the predecode signal or the repair address after the row address is supplied.

5. A semiconductor memory device comprising:

a memory cell array having a normal memory cell and a redundant memory cell that is used to replace the normal memory cell when it is defective;

a word driver selecting a predetermined word line within the memory cell array based on a row address supplied in synchronism with an active command, and canceling selection of the word line in response to a precharge command; and

a signal control circuit resetting a repair address generated when the row address indicates the normal memory cell that is defective, without resetting a predecode signal generated by predecoding the row address, in response to issuance of the precharge command.

6. The semiconductor memory device as claimed in claim 5 , further comprising a plurality of signal wirings for transmitting the predecode signal, the signal wirings having a twist structure in which the signal wirings adjacent to each other are switched to one another.

7. The semiconductor memory device as claimed in claim 6 , further comprising a shield power supply wiring arranged between the signal wirings.

8. A control method of a semiconductor memory device, the semiconductor memory device including a memory cell array having a normal memory cell and a redundant memory cell that is used to replace the normal memory cell when it is defective, the control method of the semiconductor memory device comprising:

selecting a predetermined word line within the memory cell array based on a row address supplied in synchronism with an active command;

canceling selection of the word line in response to a precharge command;

generating a predecode signal by predecoding the row address;

determining whether the row address is a defective address;

generating a repair address in response to a fact that the row address is a defective address;

selecting a word line corresponding to the normal memory cell based on the predecode signal in response to a fact that the row address is not the defective address;

selecting a word line corresponding to the redundant memory cell based on the repair address in response to a fact that the row address is a defective address; and

resetting the repair address without resetting the predecode signal, in response to issuance of the precharge command.