Method for manufacturing flat display device

1. A method for manufacturing a flat display device, the method comprising:

providing a substrate divided into an active region, a peripheral region, and a pad region, wherein the active region includes a plurality of pixel regions, and the peripheral region includes a plurality of dummy pixel regions around the active region;

forming a metal layer on the substrate, and forming a gate electrode, a common electrode, a dummy common electrode, a gate line, a common line, and a gate pad using a photolithography method including a mask;

forming a gate insulating layer, an amorphous silicon layer, a doped amorphous silicon layer, and another metal layer on the substrate including the gate electrode, and forming a channel layer, source and drain electrodes, a storage electrode, a data line, a dummy data line, a dummy storage electrode and a data pad using a photolithography method including one of a diffraction mask and a half-tone mask;

forming a first passivation layer, a dielectric layer, and a second passivation layer on the substrate including the source and drain electrodes, and removing portions of the dielectric layer corresponding to the gate pad and the data pad while forming first and second contact holes on the storage electrode and the dummy storage electrode respectively; and

forming a transparent conductive material on the substrate including the first and second contact holes, and forming a pixel electrode, a dummy pixel electrode, a gate pad electrode, and a data pad electrode using a photolithography method including a mask,

wherein the dummy pixel electrode is integrally formed on the dummy pixel regions of the peripheral region, and

wherein the dummy storage electrode is branched off from the dummy data line and is formed in each of the dummy pixel regions of the peripheral region.

2. The method according to claim 1 , wherein the forming of the contact hole comprises:

forming the first passivation layer and the dielectric layer on the substrate, and removing a portion of the dielectric layer in the storage electrode region to form a contact hole, the portions of the dielectric layer corresponding to a gate pad region and a data pad region being removed; and

forming a contact hole in the dielectric layer, forming the second passivation layer on the substrate, and forming contact holes in the storage electrode region, the gate pad region, and the data pad region.

3. The method according to claim 1 , wherein the pixel electrode is electrically connected with the storage electrode through the contact hole.

4. The method according to claim 1 , wherein the first passivation layer, the dielectric layer, and the second passivation layer are stacked between the pixel electrode and the storage electrode.

5. The method according to claim 1 , wherein a plurality of dummy pixel regions in the peripheral region each is defined by crossings of the gate line and the dummy data line,

wherein each dummy pixel region includes:

the dummy common electrode in the dummy pixel region; and

a dummy storage electrode overlapping the dummy common electrode and extending from the corresponding dummy data line; and

forming an integral dummy pixel electrode electrically contacting the dummy storage electrodes in the peripheral region.

6. The method according to claim 1 , wherein a source electrode of the thin film transistor includes three source electrode sections, and a drain electrode of the thin film transistor includes two drain electrode sections, and wherein the drain electrode sections are alternated with the source electrode sections.

7. The method according to claim 6 , wherein channel layers of the thin film transistor are between the three source electrode sections of the source electrode and the two drain electrodes sections of the drain electrode.

8. The method according to claim 1 , wherein the pixel electrode is connected to the storage electrode through the first contact hole, and the dummy pixel electrode is connected to the dummy storage electrode through the second contact hole.

9. The method according to claim 8 , wherein the storage electrode is integrally formed with the drain electrode.