Semiconductor device and method for fabricating the same
View Patent ↗The semiconductor device comprises a silicon substrate 14 having a step formed in the surface which makes the surface in a flash memory cell region 10 lower than the surface in a peripheral circuit region 12 ; a device isolation region 20 a formed in a trench 18 in the flash memory cell region 10 ; a device isolation region 20 c formed in a trench 24 deeper than the trench 18 in the peripheral circuit region 12 ; a flash memory cell 46 including a floating gate 32 and a control gate 40 formed on the device region defined by the device isolation region 20 a ; and transistors 62, 66 formed on the device regions defined by the device isolation region 20 c.
1. A method for fabricating a semiconductor device comprising:
forming a first conduction film to be a floating gate over a semiconductor substrate in a first region and in a second region with a first insulation film formed therebetween, the first insulation film having a first etching characteristic different from a second etching characteristic of the semiconductor substrate;
removing the first conduction film in the second region;
forming a mask over the first conduction film in the first region and over the semiconductor substrate in the second region, the mask having a first opening formed in the first region and a second opening formed in the second region;
performing a first etching process etching the first conduction film exposed in the first opening until the first insulation film is exposed in the first opening while etching the semiconductor substrate exposed in the second opening;
performing a second etching process etching the first insulation film exposed in the first opening until the semiconductor substrate is exposed in the first opening, while further etching the semiconductor substrate exposed in the second opening, wherein a first etching rate of the first insulation film in the second etching process is lower than a second etching rate of the semiconductor in the second etching process;
performing a third etching process etching the semiconductor substrate exposed in the first opening while further etching the semiconductor substrate exposed in the second opening,
forming a second insulation film over the semiconductor substrate etched by the first etching process, the second etching process, and the third etching process,
forming a control gate over the floating gate with a third insulation film formed therebetween while forming a gate electrode of a transistor over the second region.
2. The method for fabricating a semiconductor device according to claim 1 , further comprising before forming the first conduction film, forming a step in a surface of the semiconductor substrate so that a surface in the first region is lower than a surface of the second region.
3. The method for fabricating a semiconductor device according to claim 2 , wherein
in forming the step in the surface of the semiconductor substrate, the surface of the semiconductor substrate in the first region is selectively etched to form the step in the surface of the semiconductor substrate.
4. The method for fabricating a semiconductor device according to claim 3 , wherein
in forming the first conduction film, the first conduction film is formed so that a height of an upper surface of the semiconductor substrate in the second region is substantially the same as a height of an upper surface of the first conduction film in the first region.
5. The method for fabricating a semiconductor device according to claim 2 , wherein
in forming the step in the surface of the semiconductor substrate, the surface of the semiconductor substrate in the first region is selectively oxidized to form an oxide film, and the oxide film is removed to form the step in the surface of the semiconductor substrate.
6. The method for fabricating a semiconductor device according to claim 5 , wherein
in forming the first conduction film, the first conduction film is formed so that a height of an upper surface of the semiconductor substrate in the second region is substantially the same as a height of an upper surface of the first conduction film in the first region.
7. The method for fabricating a semiconductor device according to claim 2 , wherein
in forming the step in the surface of the semiconductor substrate, a semiconductor layer is selectively grown over the surface of the semiconductor substrate in the second region to form the step in the surface of the semiconductor substrate.
8. The method for fabricating a semiconductor device according to claim 2 , wherein
in forming the first conduction film, the first conduction film is formed so that a height of an upper surface of the semiconductor substrate in the second region is substantially the same as a height of an upper surface of the first conduction film in the first region.
9. The method for fabricating a semiconductor device according to claim 2 , further comprising after forming the second insulating film and before forming the control gate, forming a sidewall portion of a second conduction film over a side wall of the floating gate.
10. The method for fabricating a semiconductor device according to claim 1 , further comprising after forming the second insulating film and before forming the control gate, forming a sidewall portion of a second conduction film over a side wall of the floating gate.
11. The method for fabricating a semiconductor device according to claim 10 , wherein
in forming the sidewall portion, the second conduction film is buried between adjacent ones of a plurality of the floating gates and is etched to be left selectively on the side wall of the floating gates.
12. The method for fabricating a semiconductor device according to claim 1 , further comprising, after forming the second insulation film and before forming the control gate:
forming a second mask covering the second region and exposing the first region; and
etching a part of the second insulation film in the first region with the second mask used as an etching mask.