IP Library Granted Patent US 7,993,801
Granted Patent B2
US 7,993,801 · App. 12/321,023 · Granted Aug 9, 2011

Multilayer active mask lithography

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Quick Facts
Patent No.
US 7,993,801
App. No.
12/321,023
Granted
Aug 9, 2011
Kind
B2
Abstract

An active mask emits a patterned energy flux in response to an energy input.

Claims (58)

1. A lithographic mask, comprising:

a patterned energy emitting layer including:

at least one active region configured to emit an energy flux at a selected level in response to an energy input; and

at least one inactive region configured not to emit an energy flux at the selected level in response to the energy input; and

a patterned transmissivity layer including:

a first region having a first selected transmissivity to the energy flux; and

a second region having a second selected transmissivity to the energy flux, the second selected transmissivity differing from the first selected transmissivity.

2. The mask of claim 1 , wherein the second selected transmissivity is negligible.

3. The mask of claim 1 , wherein the energy flux is electromagnetic radiation.

4. The mask of claim 1 , wherein the energy flux is an electromagnetic field.

5. The mask of claim 1 , wherein the energy flux is a particle beam.

6. The mask of claim 5 , wherein the particle beam is an electron beam.

7. The mask of claim 1 , wherein the patterned energy emitting layer includes a fluorescent material, and wherein the energy flux is emitted by fluorescence of the fluorescent material.

8. The mask of claim 7 , wherein the fluorescent material includes a phosphor.

9. The mask of claim 7 , wherein the fluorescent material includes a quantum dot.

10. The mask of claim 1 , wherein the patterned energy emitting layer includes a nonlinear optical material.

11. The mask of claim 1 , wherein the patterned energy emitting layer includes a gain material configured to amplify the energy input to produce the energy flux.

12. The mask of claim 1 , wherein the patterned energy emitting layer includes a photocathode.

13. The mask of claim 1 , wherein the patterned energy emitting layer includes a field emission material.

14. The mask of claim 1 , wherein the patterned energy emitting layer includes an electrode.

15. The mask of claim 1 , wherein the patterned energy emitting layer includes a photoemissive material.

16. The mask of claim 1 , wherein the patterned energy emitting layer includes a luminescent material.

17. The mask of claim 1 , wherein the patterned transmissivity layer is configured to transmit the energy flux through the first region to emerge as photons.

18. The mask of claim 1 , wherein the patterned transmissivity layer is configured to transmit the energy flux through the first region to emerge as plasmons.

19. The mask of claim 1 , wherein the patterned transmissivity layer is configured to transmit the energy flux through the first region to emerge as charged particles.

20. The mask of claim 19 , wherein the charged particles are electrons.

21. The mask of claim 19 , wherein the charged particles are holes.

22. The mask of claim 1 , wherein the patterned transmissivity layer is configured to transmit the energy flux through the first region to emerge as an electromagnetic field.

23. A lithographic mask, comprising:

a patterned transmissivity layer including:

a first region having a first selected transmissivity to an energy input; and

a second region having a second selected transmissivity to the energy input, the second selected transmissivity differing from the first selected transmissivity; and

a energy emitting layer including:

at least one active region configured to emit an energy flux at a selected level in response to the transmitted energy input.

24. The mask of claim 23 , wherein the second selected transmissivity is negligible.

25. The mask of claim 23 , wherein the energy emitting layer further includes at least one inactive region configured not to emit an energy flux at the selected level in response to the transmitted energy input.

26. The mask of claim 25 , wherein the at least one inactive region has a selected transmissivity to the transmitted energy input.

27. The mask of claim 23 , wherein the energy flux is electromagnetic radiation.

28. The mask of claim 23 , wherein the energy flux is an electromagnetic field.

29. The mask of claim 23 , wherein the energy flux is charged particles.

30. The mask of claim 29 , wherein the charged particles are electrons.

31. The mask of claim 23 , wherein the energy input is electromagnetic radiation.

32. The mask of claim 23 , wherein the energy input is an electromagnetic field.

33. The mask of claim 23 , wherein the energy input is a particle beam.

34. The mask of claim 33 , wherein the particle beam is an electron beam.

35. The mask of claim 23 , wherein the energy emitting layer includes an active gain material.

36. The mask of claim 35 , wherein the energy emitting layer is configured to function as an optical cavity.

37. The mask of claim 23 , wherein the energy emitting layer includes a nonlinear optical material.

38. The mask of claim 23 , wherein the energy emitting layer includes a fluorescent material.

39. The mask of claim 23 , wherein the energy emitting layer includes a light emitting diode.

40. The mask of claim 23 , wherein the energy emitting layer includes a scintillation material.

41. The mask of claim 23 , wherein the energy emitting layer includes a photocathode.

42. The mask of claim 23 , wherein the energy emitting layer includes a field emission material.

43. The mask of claim 23 , wherein the energy emitting layer includes a photoemissive material.

44. The mask of claim 23 , wherein the energy emitting layer includes a luminescent material.

45. The mask of claim 23 , wherein the energy emitting layer includes a quantum dot.

46. The mask of claim 23 , wherein the patterned transmissivity layer includes a waveguide.

47. The mask of claim 23 , wherein the patterned transmissivity layer includes a region supporting plasmon propagation.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 15, 2023
From: DEEP SCIENCE LLC
To: ENTERPRISE SCIENCE FUND, LLC
Reel/Frame 064924/0296 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 15, 2016
From: THE INVENTION SCIENCE FUND I, LLC
To: DEEP SCIENCE, LLC
Reel/Frame 037540/0628 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 26, 2011
From: SEARETE LLC
To: THE INVENTION SCIENCE FUND I, LLC
Reel/Frame 026183/0533 →