Process for forming encapsulated electronic devices

1. A process for forming an encapsulated electronic device, said device comprising active areas and sealing areas on a substrate, said process comprising:

providing the substrate;

forming a discontinuous pattern of a material having a first surface energy on at least a portion of the sealing areas;

forming multiple active layers, wherein at least one active layer is formed by liquid deposition from a liquid medium having a surface energy greater than the first surface energy;

providing an encapsulation assembly;

bonding the encapsulation assembly to the substrate in the sealing areas.

2. The process of claim 1 , wherein the material having a first surface energy is fluorinated.

3. The process of claim 1 , wherein the discontinuous pattern is formed by treating with a radiation-sensitive material, patternwise exposing to radiation, and developing.

4. The process of claim 1 , wherein treatment of the material having a first surface energy with anisole results in a contact angle of at least 40°.

5. The process of claim 4 , wherein the contact angle is at least 60°.

6. A process for forming an encapsulated organic light-emitting diode, the process comprising:

providing a substrate having an active area and sealing area;

providing a multiplicity of first electrode structures on the substrate in the active area;

forming a first charge transport layer over the electrode structures in at least the active area;

forming a discontinuous pattern of a material having a first surface energy on at least a portion of the sealing area;

forming at least one photoactive layer comprising a metal complex by liquid deposition from a liquid composition, wherein the liquid composition has a second surface energy that is greater than the first surface energy;

forming a second charge transport layer in at least the active area;

forming a second electrode in at least the active area;

cleaning the sealing area;

providing an encapsulation assembly; and

bonding the encapsulation assembly to the substrate in the sealing areas.

7. The process of claim 6 , wherein the discontinuous pattern is formed by treating with a radiation-sensitive material, patternwise exposure to radiation, and developing.

8. The process of claim 6 , wherein the discontinuous pattern comprises a regular array of islands of material.

9. The process of claim 6 , wherein the discontinuous pattern comprises a regular array of holes in a film.

10. The process of claim 6 , wherein the photoactive material is applied in multiple printing lanes and the discontinuous pattern is the printing lanes in the sealing area.

11. The process of claim 6 , wherein the luminescent metal complex comprises a metal selected from the group consisting of Al, Zr, Ir, Pt, Rh, Ru, Os, and Re.

12. The process of claim 6 , wherein the metal complex is a luminescent metal complex having at least one cyclometalating ligand coordinated through one nitrogen atom and one carbon atom.

13. The process of claim 6 , wherein the metal complex is a host material.

14. The process of claim 6 , wherein the photoactive layer is formed by continuous nozzle printing.

15. The process of claim 6 , wherein the sealing area is cleaned by a dry etch process.

16. The process of claim 9 , wherein the holes are elliptical.

17. The process of claim 10 , wherein the discontinuous pattern comprises a regular array of elliptical holes in a film of material.

18. The process of claim 17 , wherein the printing lane has a width w, the elliptical hole has a major axis A and a minor axis a, wherein:

a=0.8(w) to 1.2(w);

A=1.2(a) to 1.8(a);

d=1.5(A) to 2.0(A).

19. The process of claim 18 , wherein:

a=0.85(w) to 1.15(w);

A=1.4(a) to 1.6(a);

d=1.6(A) to 1.8(A).