Semiconductor light emitting device and a method of manufacturing the same
Disclosed is a semiconductor light emitting device comprising a seed layer, a first conductive semiconductor layer into which the seed layer is partially inserted, a first electrode electrically connected to the first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, and a second electrode layer under the second conductive semiconductor layer.
1. A semiconductor light emitting device comprising:
a seed portion;
a first conductive semiconductor layer into which the seed portion is partially embedded, and having a surface that exposes the seed portion;
a first electrode on the surface of the first conductive semiconductor layer;
an active layer under the first conductive semiconductor layer;
a second conductive semiconductor layer under the active layer; and
a second electrode under the second conductive semiconductor layer, and comprising at least one of reflective materials and a conductive support member.
2. The semiconductor light emitting device as claimed in claim 1 , wherein a lower surface of the seed portion comprises a circular shape or a polygonal shape.
3. The semiconductor light emitting device as claimed in claim 1 , wherein an upper surface of the seed portion is aligned on a same plane with an upper surface of the first conductive semiconductor layer, or is aligned on a plane different from the upper surface of the first conductive semiconductor layer.
4. The semiconductor light emitting device as claimed in claim 1 , wherein the seed portion comprises an undoped semiconductor layer.
5. The semiconductor light emitting device as claimed in claim 1 , wherein the seed portion is formed along the first conductive semiconductor layer in at least one of a strip shape, a matrix shape, a net shape, a circular shape and a polygonal shape.
6. A semiconductor light emitting device comprising:
a first conductive semiconductor layer comprising a concave portion comprising at least one of a strip shape, a matrix shape, a net shape, a circular shape and a polygonal shape;
a first electrode on the first conductive semiconductor layer;
an active layer under the first conductive semiconductor layer;
a second conductive semiconductor layer under the active layer; and
a second electrode under the second conductive semiconductor layer, and comprising at least one of reflective materials and a conductive support member.
7. The semiconductor light emitting device as claimed in claim 6 , comprising an undoped semiconductor layer partially formed the concave portion of the first conductive semiconductor layer.
8. The semiconductor light emitting device as claimed in claim 6 , wherein the first conductive semiconductor layer comprises at least one concave portion, and the concave portion has a depth smaller than a thickness of the first conductive semiconductor layer.
9. The semiconductor light emitting device as claimed in claim 6 , comprising a seed portion is formed in the concave portion of the first conductive semiconductor layer and the seed portion comprises at least one of a strip shape, a matrix shape, a net shape, a circular shape and a polygonal shape.
10. The semiconductor light emitting device as claimed in claim 6 , wherein the first conductive semiconductor layer comprises an N type semiconductor layer or a P type semiconductor layer.
11. The semiconductor light emitting device as claimed in claim 7 , wherein the first conductive semiconductor layer and the seed portion have a roughness.
12. The semiconductor light emitting device as claimed in claim 1 , wherein the seed portion is formed at regular intervals or irregular intervals.
13. The semiconductor light emitting device as claimed in claim 1 , wherein the seed portion has a thickness of 1 Ř9 μm.
14. The semiconductor light emitting device as claimed in claim 9 , wherein an upper surface of the seed portion is aligned on a plane different from the upper surface of the first conductive semiconductor layer.
15. The semiconductor light emitting device as claimed in claim 6 , wherein the seed portion comprises at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN.
16. The semiconductor light emitting device as claimed in claim 6 , wherein a surface of the seed portion is exposed on the first conductive semiconductor layer.
17. The semiconductor light emitting device as claimed in claim 6 , wherein the second electrode is formed at a local area of a lower part of the second conductive semiconductor layer.
18. The semiconductor light emitting device as claimed in claim 6 , wherein the second electrode comprises material having an ohmic contact and a seed metal.