IP Library Granted Patent US 8,172,945
Granted Patent B2
US 8,172,945 · App. 12/325,014 · Granted May 8, 2012

High-purity vitreous silica crucible for pulling large-diameter single-crystal silicon ingot

Assignee: Japan Super Quartz Corporation
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,172,945
App. No.
12/325,014
Granted
May 8, 2012
Kind
B2
Abstract

A high-purity vitreous silica crucible used for pulling a large-diameter single-crystal silicon ingot, includes a double layered structure constituted by an outer layer composed of high-purity amorphous vitreous silica with a bubble content of 1 to 10% and a purity of 99.99% or higher, and an inner layer composed of high-purity amorphous vitreous silica s with a bubble content of 0.6% or less and a purity of 99.99% or higher, wherein, at least for an inner surface of the vitreous silica crucible between ingot-pulling start line and ingot-pulling end line of a silicon melt surface, a longitudinal section of the inner surface is shaped into a waveform, and depth and width of the ring grooves constituting the multi ring-groove patterned face are set in the range of 0.5 to 2 mm and 10 to 100 mm, respectively.

Claims (5)

1. A vitreous silica crucible for pulling a single-crystal silicon ingot, comprising a double layered structure constituted by an outer layer composed of high-purity amorphous vitreous silica with a bubble content of 1 to 10% and a purity of 99.99% or higher, and an inner layer composed of high-purity amorphous vitreous silica with a bubble content of 0.6% or less and a purity of 99.99% or higher,

wherein, with regard to an inner surface of the high-purity vitreous silica crucible, at least for the inner surface between ingot-pulling start line and ingot-pulling end line of a silicon melt surface,

(a) a longitudinal section of the inner wall surface is in the shape of the wave to be a multi ring-groove patterned face, and

(b) depth of the ring grooves constituting the multi ring-groove patterned face is set in the range of 0.5 to 2 mm and width of the ring grooves constituting the multi ring-groove patterned face is set in the range of 10 to 100 mm, respectively, such that pinhole defects in the large-diameter single-crystal silicon ingot are reduced.

2. The vitreous silica crucible of claim 1 , wherein the vitreous silica crucible has an outer diameter of 610 to 810 mm.

Assignments (2)
MERGER Recorded Oct 15, 2018
From: JAPAN SUPER QUARTZ CORPORATION
To: SUMCO CORPORATION
Reel/Frame 047237/0179 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 23, 2009
From: SHIMAZU, ATUSHI
To: JAPAN SUPER QUARTZ CORPORATION
Reel/Frame 022295/0653 →
Priority Claims (1)
JP P2007-323419 · Dec 14, 2007 · national
Continuity (1)
Related Publication 20090151624A1 · Jun 18, 2009