IP Library Granted Patent US 7,682,886
Granted Patent B2
US 7,682,886 · App. 12/325,951 · Granted Mar 23, 2010

Flat panel display and manufacturing method of flat panel display

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 7,682,886
App. No.
12/325,951
Granted
Mar 23, 2010
Kind
B2
Abstract

The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.

Claims (11)

1. A manufacturing method of a display device comprising:

providing an insulating substrate;

forming a source electrode and a drain electrode on the insulating substrate, wherein the source electrode and the drain electrode are separated by a channel region;

forming a bank surrounding the channel region and exposing at least a portion of the source electrode and at least a portion of the drain electrode;

introducing a self-assembly monolayer material to a region proximate the source electrode and the drain electrode that are exposed by the bank;

forming a self-assembly monolayer having a first portion on at least a portion of the source electrode and a second portion on at least a portion of the drain electrode; and

forming a semiconductor layer adjacent at least a portion of the self-assembly monolayer and in the channel region,

wherein the self-assembly monolayer is surrounded by the bank.

2. The manufacturing method of claim 1 , further comprising forming a gate electrode on the insulating substrate and a gate insulating layer on the gate electrode before forming the source electrode and the drain electrode.

3. The manufacturing method of claim 1 , wherein the semiconductor layer is formed in the bank by an ink-jet method.

4. The manufacturing method of claim 1 , wherein the display device comprises at least one of a liquid crystal display device, an organic light emitting diode device, a flat panel display device, and an electrophoretic indication display device.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 029008/0196 →